2SC3834 Datasheet and Replacement

UNISONIC TECHNOLOGIES CO., LTD 2SC3834 NPN SILICON TRANSISTOR SWITCH NPN TRANSISTOR DESCRIPTION The UTC 2SC3834 is an epitaxial planar type NPN silicontransistor.. FEATURES * Humidifier, DC-DC converter, and general purpose ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Plating Halogen Free 1 2 3 2SC3834L-TA3-T 2SC3834G-TA3-T TO-220

Product Specification www.jmnic.comSilicon NPN Power Transistor 2SC3834 DESCRIPTION Low Collector Saturation Voltage : VCE(sat)= 0.5V(Max)@ IC=3A Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V (Min) Good Linearity of hFE APPLICATIONS Designed for use in humidifier , DC/DC converter and general purpose applications ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBO

2SC3834Silicon NPN Triple Diffused Planar Transistor (Switching Transistor)Application : Humidifier, DC-DC Converter, and General Purpose Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C) External Dimensions MT-25(TO220)SymbolSymbol 2SC3834 Unit Conditions 2SC3834 Unit0.24.80.210.20.12.0ICBOVCBO 200 V VCB=200V 100max AIEBO 100max A

2SC3834(3DA3834) NPN /SILICON NPN TRANSISTOR :- Purpose: Humidifier, DC-DC converter, and general purpose. /Absolute Maximum Ratings(Ta=25) Symbol Rating Unit V CBO200 V V CEO120 V V 8.0 V EBO I 7.0 A C I 3.0 A B P (Tc=25) 50

isc Silicon NPN Power Transistor 2SC3834DESCRIPTIONLow Collector Saturation Voltage: V = 0.5V(Max)@ I =3ACE(sat) CCollector-Emitter Breakdown Voltage-: V = 120V (Min)(BR)CEOGood Linearity of hFEMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in humidifier , DC/DC converter andgeneral purpose appl

2SC3834F(BR3DA3834F) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-220F NPN Silicon NPN transistor in a TO-220F Plastic Package. / Features / Applications - Humidifier, DC-DC converter, and general purpose. / Equivalent Circuit /

2SC3834F(3DA3834F) NPN /SILICON NPN TRANSISTOR :- Purpose: Humidifier, DC-DC converter, and general purpose. /Absolute Maximum Ratings(Ta=25) Symbol Rating Unit V CBO200 V V CEO120 V V 8.0 V EBO I 7.0 A C I 3.0 A B P (Tc=25)

2SC3834T1TLSilicon NPN Power TransistorDESCRIPTIONLow Collector Saturation Voltage: V = 0.5V(Max)@ I =3ACE(sat) CCollector-Emitter Breakdown Voltage-: V = 120V (Min)(BR)CEOGood Linearity of hFEAPPLICATIONSDesigned for use in humidifier , DC/DC converter andgeneral purpose applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collec