2SC3870 Datasheet and Replacement

Power Transistors2SC3870Silicon NPN triple diffusion planar typeFor high breakdown voltage high-speed switchingUnit: mm10.0 0.2 4.2 0.25.5 0.2 2.7 0.2FeaturesHigh-speed switching 3.1 0.1High collector to base voltage VCBOWide area of safe operation (ASO)Full-pack package which can be installed to the heat sink withone screw1.3 0.21.4 0.1+0.2Abso

JMnic Product Specification Silicon NPN Power Transistors 2SC3870 DESCRIPTION With TO-220Fa package High breakdown voltage Wide area of safe operation APPLICATIONS For high speed switching applications PINNING PIN DESCRIPTION1 Base 2 Collector3 EmitterAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNITVCBO Collector-base voltage Open

isc Silicon NPN Power Transistor 2SC3870DESCRIPTION Collector-Base Breakdown Voltage-: V = 500V(Min.)(BR)CBOLow Collector Saturation VoltageWide Area of Safe OperationHigh Speed SwitchingMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high speed switching applications.ABSOLUTE MAXIMUM RATINGS (T =25

Power Transistors2SC3873Silicon NPN triple diffusion planar typeFor high breakdown voltage high-speed switchingUnit: mm15.0 0.3 5.0 0.2Features11.0 0.2 3.2High-speed switchingHigh collector to base voltage VCBO 3.2 0.1Wide area of safe operation (ASO)Satisfactory linearity of foward current transfer ratio hFEFull-pack package which can be installed to the hea

Power Transistors2SC3872Silicon NPN triple diffusion planar typeFor high breakdown voltage high-speed switchingUnit: mm15.0 0.3 5.0 0.2Features11.0 0.2 3.2High-speed switchingHigh collector to base voltage VCBO 3.2 0.1Wide area of safe operation (ASO)Full-pack package which can be installed to the heat sink withone screw2.0 0.22.0 0.1Absolute Maximu

Power Transistors2SC3874Silicon NPN triple diffusion planar typeFor high breakdown voltage high-speed switchingUnit: mm 3.3 0.220.0 0.5 5.0 0.33.0FeaturesHigh-speed switchingHigh collector to base voltage VCBOWide area of safe operation (ASO) 1.5Satisfactory linearity of foward current transfer ratio hFE1.52.0 0.3Absolute Maximum Ratings (TC=25C)2.7

Product Specification www.jmnic.com Silicon NPN Power Transistors 2SC3873 DESCRIPTION With TO-3PFa package High VCBO High speed switching Good linearity of hFE Wide area of safe operation APPLICATIONS For high speed switching applications PINNING PIN DESCRIPTION1 Base 2 Collector3 EmitterAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS

JMnic Product Specification Silicon NPN Power Transistors 2SC3874 DESCRIPTION With TO-3PL package High speed switching High VCBO Wide area of safe operation APPLICATIONS For high-speed switching applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PL) and symbol 3 EmitterAbsolute maximum ratin

isc Silicon NPN Power Transistor 2SC3873DESCRIPTION Collector-Base Breakdown Voltage-: V = 500V(Min.)(BR)CBOLow Collector Saturation VoltageWide Area of Safe OperationHigh Speed SwitchingMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high speed switching applications.ABSOLUTE MAXIMUM RATINGS (T =25

isc Silicon NPN Power Transistor 2SC3871DESCRIPTION Collector-Base Breakdown Voltage-: V = 500V(Min.)(BR)CBOLow Collector Saturation VoltageWide Area of Safe OperationHigh Speed SwitchingMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high speed switching applications.ABSOLUTE MAXIMUM RATINGS (T =25

isc Product Specificationisc Silicon NPN Power Transistor 2SC3874DESCRIPTIONSilicon NPN triple diffusion planar typeHigh Switching SpeedWide area of safe operationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage high-speed switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNI