2SC3886 Datasheet. Specs and Replacement
Type Designator: 2SC3886 📄📄
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 50 W
Maximum Collector-Base Voltage |Vcb|: 1400 V
Maximum Collector-Emitter Voltage |Vce|: 600 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 8 A
Max. Operating Junction Temperature (Tj): 175 °C
Electrical Characteristics
Transition Frequency (ft): 8 MHz
Collector Capacitance (Cc): 150 pF
Forward Current Transfer Ratio (hFE), MIN: 8
Noise Figure, dB: -
Package: TOP3
- BJT ⓘ Cross-Reference Search
2SC3886 datasheet
..1. Size:214K inchange semiconductor
2sc3886.pdf 
isc Silicon NPN Power Transistor 2SC3886 DESCRIPTION High Breakdown Voltage- V = 600V (Min) CEO High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Horizontal deflection output for high resolution display. High speed switching regulator output applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAM... See More ⇒
0.1. Size:94K inchange semiconductor
2sc3886a.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3886A DESCRIPTION With TO-3P(H)IS package High voltage ,high speed APPLICATIONS Horizontal deflection output for high resolution display High speed switching regulator output applications PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-3P(H)IS) and symbol 3... See More ⇒
8.3. Size:115K secos
2sc388.pdf
2SC388 0.05A , 30V NPN Plastic-Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free TO-92 FEATURES TV Final picture if amplifier applications G H Emitter Collector Base J A D Millimeter REF. Min. Max. B A 4.40 4.70 B 4.30 4.70 K C 12.70 - D 3.30 3.81 E 0.36 0.56 F 0.36 0.51 ... See More ⇒
8.4. Size:194K lge
2sc388.pdf
2SC388(NPN) TO-92 Bipolar Transistors TO-92 1. EMITTER 2. COLLECTOR 3. BASE Features TV final pictureif amplifier applications MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Emitter Voltage 30 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Voltage 4 V IC Collector Current -Continuous 50 mA Dimensions in inches a... See More ⇒
8.5. Size:247K inchange semiconductor
2sc3883.pdf
isc Silicon NPN Power Transistor 2SC3883 DESCRIPTION High Breakdown Voltage- V = 800V (Min) CEO High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Horizontal deflection output for high resolution display. High speed switching regulator output applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAM... See More ⇒
8.6. Size:215K inchange semiconductor
2sc3884.pdf
isc Silicon NPN Power Transistor 2SC3884 DESCRIPTION High Breakdown Voltage- V = 1400V (Min) CBO High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Horizontal deflection output for high resolution display. High speed switching regulator output applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARA... See More ⇒
8.7. Size:215K inchange semiconductor
2sc3885.pdf
isc Silicon NPN Power Transistor 2SC3885 DESCRIPTION High Breakdown Voltage V = 1400V (Min) CBO High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Horizontal deflection output for high resolution display. High speed switching regulator output applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAM... See More ⇒
Detailed specifications: 2SC388, 2SC3880, 2SC3881, 2SC3883, 2SC3884, 2SC3884A, 2SC3885, 2SC3885A, 2SC1815, 2SC3886A, 2SC3887, 2SC3887A, 2SC3888, 2SC3888A, 2SC3889, 2SC3889A, 2SC388A
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