2SC3893A Datasheet and Replacement
Type Designator: 2SC3893A
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 60 W
Maximum Collector-Base Voltage |Vcb|: 1500 V
Maximum Collector-Emitter Voltage |Vce|: 600 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 8 A
Max. Operating Junction Temperature (Tj): 175 °C
Transition Frequency (ft): 8 MHz
Collector Capacitance (Cc): 210 pF
Forward Current Transfer Ratio (hFE), MIN: 8
Noise Figure, dB: -
Package: ISOWATT218
2SC3893A Transistor Equivalent Substitute - Cross-Reference Search
2SC3893A Datasheet (PDF)
2sc3893a.pdf
isc Silicon NPN Power Transistor 2SC3893A DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO High Switching Speed Low Saturation Voltage Built-in Damper Diode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for horizontal deflection output applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER... See More ⇒
2sc3893.pdf
isc Silicon NPN Power Transistor 2SC3893 DESCRIPTION High Breakdown Voltage- V = 1400V (Min) CBO High Switching Speed Low Saturation Voltage Built-in Damper Diode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for horizontal deflection output applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER ... See More ⇒
2sc3896.pdf
Ordering number EN4097 NPN Triple Diffused Planar Silicon Transistor 2SC3896 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features Package Dimensions High speed (tf=100ns typ). unit mm High reliability (Adoption of HVP process). 2039D High breakdown voltage (VCBO=1500V). [2SC3896] Adoption of MBIT process. 1 Base 2 Collector 3 E... See More ⇒
2sc3897.pdf
Ordering number EN4098 NPN Triple Diffused Planar Silicon Transistor 2SC3897 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features Package Dimensions High speed (tf=100ns typ). unit mm High reliability (Adoption of HVP process). 2039D High breakdown voltage (VCBO=1500V). [2SC3897] Adoption of MBIT process. 1 Base 2 Collector 3 E... See More ⇒
Datasheet: 2SC389 , 2SC3890 , 2SC3890A , 2SC3891 , 2SC3891A , 2SC3892 , 2SC3892A , 2SC3893 , TIP42 , 2SC3894 , 2SC3894A , 2SC3895 , 2SC3895A , 2SC3896 , 2SC3896A , 2SC3897 , 2SC3897A .
History: 2SC3763 | HA7527 | 2SA776A | JC556B | 2SA811AC15 | 2SC3468E | RN1710
Keywords - 2SC3893A transistor datasheet
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History: 2SC3763 | HA7527 | 2SA776A | JC556B | 2SA811AC15 | 2SC3468E | RN1710
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