2SC3897 Datasheet and Replacement
Type Designator: 2SC3897
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 70
W
Maximum Collector-Base Voltage |Vcb|: 1500
V
Maximum Collector-Emitter Voltage |Vce|: 800
V
Maximum Emitter-Base Voltage |Veb|: 5
V
Maximum Collector Current |Ic max|: 10
A
Max. Operating Junction Temperature (Tj): 135
°C
Transition Frequency (ft): 8
MHz
Collector Capacitance (Cc): 150
pF
Forward Current Transfer Ratio (hFE), MIN: 85
Noise Figure, dB: -
Package:
TOP3
2SC3897 Transistor Equivalent Substitute - Cross-Reference Search
2SC3897 Datasheet (PDF)
..1. Size:93K sanyo
2sc3897.pdf 

Ordering number EN4098 NPN Triple Diffused Planar Silicon Transistor 2SC3897 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features Package Dimensions High speed (tf=100ns typ). unit mm High reliability (Adoption of HVP process). 2039D High breakdown voltage (VCBO=1500V). [2SC3897] Adoption of MBIT process. 1 Base 2 Collector 3 E... See More ⇒
8.1. Size:96K sanyo
2sc3896.pdf 

Ordering number EN4097 NPN Triple Diffused Planar Silicon Transistor 2SC3896 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features Package Dimensions High speed (tf=100ns typ). unit mm High reliability (Adoption of HVP process). 2039D High breakdown voltage (VCBO=1500V). [2SC3896] Adoption of MBIT process. 1 Base 2 Collector 3 E... See More ⇒
8.3. Size:84K sanyo
2sc3894.pdf 

Ordering number EN2965B NPN Triple Diffused Planar Silicon Transistor 2SC3894 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features Package Dimensions High speed (tf=100ns typ). unit mm High breakdown voltage (VCBO=1500V). 2039D High reliability (Adoption of HVP process). [2SC3894] Adoption of MBIT process. 1 Base 2 Collector 3 ... See More ⇒
8.4. Size:84K sanyo
2sc3895.pdf 

Ordering number EN2966B NPN Triple Diffused Planar Silicon Transistor 2SC3895 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features Package Dimensions High speed (tf=100ns typ). unit mm High breakdown voltage (VCBO=1500V). 2039D High reliability (Adoption of HVP process). [2SC3895] Adoption of MBIT process. 1 Base 2 Collector 3 ... See More ⇒
8.5. Size:25K sanken-ele
2sc3890.pdf 

2SC3890 Silicon NPN Triple Diffused Planar Transistor (High Voltage and High Speed Switchihg Transistor) Application Switching Regulator and General Purpose External Dimensions FM20(TO220F) Absolute maximum ratings (Ta=25 C) Electrical Characteristics (Ta=25 C) Symbol 2SC3890 Unit Symbol Conditions 2SC3890 Unit 0.2 4.2 0.2 10.1 c0.5 2.8 VCBO 500 V VCB=500V 100max A ICBO... See More ⇒
8.7. Size:95K inchange semiconductor
2sc3892a.pdf 

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3892A DESCRIPTION With TO-3P(H)IS package Built-in damper diode High voltage ,high speed APPLICATIONS Horizontal deflection output applications PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-3P(H)IS) and symbol 3 Emitter Absolute maximum ratings (Ta=25 ) ... See More ⇒
8.8. Size:215K inchange semiconductor
2sc3894.pdf 

isc Silicon NPN Power Transistor 2SC3894 DESCRIPTION High Breakdown Voltage- V = 1500V(Min) (BR)CBO High Switching Speed High Reliability Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Ultrahigh-definition CRT display horizontal deflection output applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UN... See More ⇒
8.9. Size:206K inchange semiconductor
2sc3890.pdf 

isc Silicon NPN Power Transistor 2SC3890 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 400V(Min) (BR)CEO Low Collector Saturation Voltage- V = 0.5V(Max)@ I = 3A CE(sat) C High Speed Switching Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for switching regulator and general purpose applications. ABSOLUT... See More ⇒
8.11. Size:214K inchange semiconductor
2sc3893a.pdf 

isc Silicon NPN Power Transistor 2SC3893A DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO High Switching Speed Low Saturation Voltage Built-in Damper Diode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for horizontal deflection output applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER... See More ⇒
8.12. Size:214K inchange semiconductor
2sc3892.pdf 

isc Silicon NPN Power Transistor 2SC3892 DESCRIPTION High Breakdown Voltage- V = 1400V (Min) CBO High Switching Speed Low Saturation Voltage Built-in Damper Diode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for horizontal deflection output applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER ... See More ⇒
8.13. Size:214K inchange semiconductor
2sc3893.pdf 

isc Silicon NPN Power Transistor 2SC3893 DESCRIPTION High Breakdown Voltage- V = 1400V (Min) CBO High Switching Speed Low Saturation Voltage Built-in Damper Diode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for horizontal deflection output applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER ... See More ⇒
Datasheet: 2SC3893
, 2SC3893A
, 2SC3894
, 2SC3894A
, 2SC3895
, 2SC3895A
, 2SC3896
, 2SC3896A
, D880
, 2SC3897A
, 2SC3898
, 2SC3899
, 2SC39
, 2SC390
, 2SC3900
, 2SC3901
, 2SC3902
.
History: 2SC3880
| RN1706JE
| RN1607
| H1420
| RN1908FS
| RN2114MFV
| 2SC3751
Keywords - 2SC3897 transistor datasheet
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2SC3897 equivalent finder
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2SC3897 substitution
2SC3897 replacement