2SC3928 Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SC3928
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.15 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 125 °C
Transition Frequency (ft): 200 MHz
Collector Capacitance (Cc): 2 pF
Forward Current Transfer Ratio (hFE), MIN: 120
Noise Figure, dB: -
Package: TO236
2SC3928 Transistor Equivalent Substitute - Cross-Reference Search
2SC3928 Datasheet (PDF)
2sc3928.pdf
ISAHAYA ELECTRONICS CORPORATIONISAHAYA ELECTRONICS CORPORATIONhttp://www.idc-com.co.jp6-41, TSUKUBA, ISAHAYA, NAGASAKI, 854-0065, JAPANKeep safety in your circuit designs !Isahaya Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with
2sc3928a sot-23-3l.pdf
2SC3928A SOT-23-3L Transistor(NPN)SOT-23-3L1. BASE 2.922. EMITTER 0.351.173. COLLECTOR Features2.80 1.60 Excellent hFE Linearity of DC forward current gain small collector to emitter saturation voltage 0.15supper mini package easy mounting 1.90 Dimensions in inches and (millimeters)MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value U
2sc3928a.pdf
SMD Type TransistorsNPN Transistors2SC3928ASOT-23Unit: mm2.9+0.1-0.1+0.10.4 -0.13 Features Collector Current Capability IC=200mA Collector Emitter Voltage VCEO=50V 1 2+0.1+0.050.95 -0.1 0.1 -0.01+0.11.9 -0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 50 Coll
2sa1526 2sc3920.pdf
Ordering number:ENN2150BPNP/NPN Epitaxial Planar Silicon Transistors2SA1526/2SC3920Switching Applications (with Bias Resistance)Applications Package Dimensions Switching circuits, inverter circuits, interface circuits,unit:mmdriver circuits.2003B[2SA1526/2SC3920]5.0Features4.04.0 On-chip bias resistance : R1=10k , R2=10k . Large current capacity : IC
2sa1527 2sc3921.pdf
Ordering number:ENN2151CPNP/NPN Epitaxial Planar Silicon Transistors2SA1527/2SC3921Switching Applications (with Bias Resistance)Applications Package Dimensions Switching circuits, inverter circuits, interface circuits,unit:mmdriver circuits.2003B[2SA1527/2SC3921]5.0Features4.04.0 On-chip bias resistance : R1=4.7k , R2=4.7k . Large current capacity :
2sa1528 2sc3922.pdf
Ordering number:ENN2152BPNP/NPN Epitaxial Planar Silicon Transistors2SA1528/2SC3922Switching Applications (with Bias Resistance)Applications Package Dimensions Switching circuits, inverter circuits, interface circuits,unit:mmdirver circuits.2003B[2SA1528/2SC3922]5.0Features4.04.0 On-chip bias resistance : R1=2.2K , R2=10k . Large current capacity : I
2sa1529 2sc3923.pdf
Ordering number:ENN2153BPNP/NPN Epitaxial Planar Silicon Transistors2SA1529/2SC3923Switching Applications (with Bias Resistance)Applications Package Dimensions Switching circuits, inverter circuits, interface circuits,unit:mmdriver circuits.2003B[2SA1529/2SC3923]5.0Features4.04.0 On-chip bias resistance : R1=2.2k , R2=2.2k . Large current capacity :
2sc3929.pdf
Transistor2SC3929, 2SC3929ASilicon NPN epitaxial planer typeFor low-frequency output amplificationUnit: mmComplementary to 2SA1531 and 2SA1531AFeatures2.1 0.1 Low noise voltage NV.0.425 1.25 0.1 0.425 High foward current transfer ratio hFE. S-Mini type package, allowing downsizing of the equipment and1automatic insertion through the tape packing and the magazinep
2sc3929 e.pdf
Transistor2SC3929, 2SC3929ASilicon NPN epitaxial planer typeFor low-frequency output amplificationUnit: mmComplementary to 2SA1531 and 2SA1531AFeatures2.1 0.1 Low noise voltage NV.0.425 1.25 0.1 0.425 High foward current transfer ratio hFE. S-Mini type package, allowing downsizing of the equipment and1automatic insertion through the tape packing and the magazinep
2sc3927.pdf
2SC3927Silicon NPN Triple Diffused Planar Transistor (High Voltage Switchihg Transistor)Application : Switching Regulator and General Purpose Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C) External Dimensions MT-100(TO3P)Symbol 2SC3927 Unit Symbol Conditions 2SC3927Unit0.24.80.415.6VCBO 900 V A 0.1ICBO VCB=800V 100max9.6 2.0VCEO 550
2sc3929a.pdf
SMD Type TransistorsNPN Transistors2SC3929A Features Low noise voltage NV. High foward current transfer ratio hFE. Complementary to 2SA1531A1 Base2 Emitter3 Collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 55 Collector - Emitter Voltage VCEO 55 V Emitter - Base Voltage VEBO 5 Collector Current
2sc3927.pdf
isc Silicon NPN Power Transistor 2SC3927DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 550V(Min)(BR)CEOHigh Switching SpeedHigh ReliabilityMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching regulator and general purposeapplications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .