2SC3966 Datasheet. Specs and Replacement
Type Designator: 2SC3966 📄📄
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.2 W
Maximum Collector-Base Voltage |Vcb|: 30 V
Maximum Collector Current |Ic max|: 0.02 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 1300 MHz
Forward Current Transfer Ratio (hFE), MIN: 70
Noise Figure, dB: -
Package: TO131
- BJT ⓘ Cross-Reference Search
2SC3966 datasheet
8.3. Size:120K rohm
2sc3969.pdf 
Transistors High Voltage Switching Transistor (400V, 2A) 2SC3969 / 2SC5161 FFeatures FExternal dimensions (Units mm) 1) Low VCE(sat). VCE(sat) = 0.15V (Typ.) (IC / IB = 1A / 0.2A) 2) High breakdown voltage. VCEO = 400V 3) Fast switching. tr = 1.0 s (IC = 0.8A) FStructure Three-layer, diffused planar type NPN silicon transistor (96-698-C14) 236 Transistors 2SC3969 / 2SC5161 ... See More ⇒
8.4. Size:40K panasonic
2sc3965 e.pdf
Transistor 2SC3965 Silicon NPN triple diffusion planer type For small TV video output Unit mm 5.0 0.2 4.0 0.2 Features High collector to emitter voltage VCEO. Small collector output capacitance Cob. Allowing supply with the radial taping. 0.7 0.1 Absolute Maximum Ratings (Ta=25 C) Parameter Symbol Ratings Unit +0.15 +0.15 Collector to base voltage VCBO 300 V 0.45 0.1 0... See More ⇒
8.5. Size:146K jmnic
2sc3962.pdf
JMnic Product Specification Silicon NPN Power Transistors 2SC3962 DESCRIPTION With TO-220C package High voltage High speed switching APPLICATIONS For switching regulator and general purpose applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNI... See More ⇒
8.6. Size:94K inchange semiconductor
2sc3969-220.pdf
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC3969 DESCRIPTION With TO-220C package Low collector saturation voltage High breakdown voltage Fast switching speed APPLICATIONS For high voltage switching applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Absolute maximum ratings (Tc=25... See More ⇒
8.7. Size:211K inchange semiconductor
2sc3969.pdf
isc Silicon NPN Power Transistor 2SC3969 DESCRIPTION Low Collector Saturation Voltage High Collector-Emitter Breakdown Voltage V = 400V (Min) (BR)CEO High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for switching regulator applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE... See More ⇒
8.8. Size:209K inchange semiconductor
2sc3968.pdf
isc Silicon NPN Power Transistor 2SC3968 DESCRIPTION Low Collector Saturation Voltage High Collector-Emitter Breakdown Voltage- V = 400V (Min) (BR)CEO High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for switching regulator applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALU... See More ⇒
8.9. Size:182K inchange semiconductor
2sc3962.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC3962 DESCRIPTION Low Collector Saturation Voltage Collector-Emitter Breakdown Voltage- V = 400V (Min) (BR)CEO Good Linearity of h FE Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in humidifier , DC/DC converter and general purpose applications A... See More ⇒
Detailed specifications: 2SC395AY, 2SC396, 2SC3960, 2SC3961, 2SC3962, 2SC3963, 2SC3964, 2SC3965, TIP42, 2SC3967, 2SC3968, 2SC3969, 2SC397, 2SC3970, 2SC3971, 2SC3972, 2SC3973
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