2SC3974 Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SC3974
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 80 W
Maximum Collector-Base Voltage |Vcb|: 800 V
Maximum Collector-Emitter Voltage |Vce|: 500 V
Maximum Collector Current |Ic max|: 7 A
Max. Operating Junction Temperature (Tj): 175 °C
Forward Current Transfer Ratio (hFE), MIN: 55
Noise Figure, dB: -
Package: X104
2SC3974 Transistor Equivalent Substitute - Cross-Reference Search
2SC3974 Datasheet (PDF)
1.1. 2sc3974.pdf 
Size:59K _panasonic
Power Transistors 2SC3974 Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching Unit: mm 15.0 0.3 5.0 0.2 Features 11.0 0.2 3.2 High-speed switching High collector to base voltage VCBO ? 3.2 0.1 Wide area of safe operation (ASO) Satisfactory linearity of foward current transfer ratio hFE Full-pack package which can be installed to the heat sink w
1.2. 2sc3974.pdf Size:82K _inchange_semiconductor
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3974 DESCRIPTION ·With TO-3PFa package ·High voltage ·High speed switching ·Wide area of safe operation APPLICATIONS ·For high voltage,and high speed Switching applications. PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Absolute maximum ratings(Ta=25?) SYMBOL PARAMETER CONDITIONS
4.1. 2sc3977.pdf Size:60K _panasonic
Power Transistors 2SC3977, 2SC3977A Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching Unit: mm 10.0 0.2 4.2 0.2 Features 5.5 0.2 2.7 0.2 High-speed switching High collector to base voltage VCBO ? 3.1 0.1 Wide area of safe operation (ASO) Satisfactory linearity of foward current transfer ratio hFE Full-pack package which can be installed to t
4.2. 2sc3971.pdf Size:60K _panasonic
Power Transistors 2SC3971, 2SC3971A Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching Unit: mm 10.0 0.2 4.2 0.2 Features 5.5 0.2 2.7 0.2 High-speed switching High collector to base voltage VCBO ? 3.1 0.1 Wide area of safe operation (ASO) Satisfactory linearity of foward current transfer ratio hFE Full-pack package which can be installed to t
4.3. 2sc3973.pdf Size:60K _panasonic
Power Transistors 2SC3973, 2SC3973A Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching Unit: mm 10.0 0.2 4.2 0.2 Features 5.5 0.2 2.7 0.2 High-speed switching High collector to base voltage VCBO ? 3.1 0.1 Wide area of safe operation (ASO) Satisfactory linearity of foward current transfer ratio hFE Full-pack package which can be installed to t
4.4. 2sc3978.pdf Size:60K _panasonic
Power Transistors 2SC3978, 2SC3978A Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching Unit: mm 10.0 0.2 4.2 0.2 Features 5.5 0.2 2.7 0.2 High-speed switching High collector to base voltage VCBO ? 3.1 0.1 Wide area of safe operation (ASO) Satisfactory linearity of foward current transfer ratio hFE Full-pack package which can be installed to t
4.5. 2sc3976.pdf Size:62K _panasonic
Power Transistors 2SC3976 Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching Unit: mm ? 3.3 0.2 20.0 0.5 5.0 0.3 3.0 Features High-speed switching High collector to base voltage VCBO Wide area of safe operation (ASO) 1.5 Satisfactory linearity of foward current transfer ratio hFE 1.5 2.0 0.3 Absolute Maximum Ratings (TC=25?C) 2.7 0.3 3.
4.6. 2sc3972.pdf Size:60K _panasonic
Power Transistors 2SC3972, 2SC3972A Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching Unit: mm 10.0 0.2 4.2 0.2 Features 5.5 0.2 2.7 0.2 High-speed switching High collector to base voltage VCBO ? 3.1 0.1 Wide area of safe operation (ASO) Satisfactory linearity of foward current transfer ratio hFE Full-pack package which can be installed to t
4.7. 2sc3979.pdf Size:59K _panasonic
Power Transistors 2SC3979, 2SC3979A Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching Unit: mm 10.0 0.2 4.2 0.2 Features 5.5 0.2 2.7 0.2 High-speed switching High collector to base voltage VCBO Wide area of safe operation (ASO) ? 3.1 0.1 Satisfactory linearity of foward current transfer ratio hFE Full-pack package which can be installed to t
4.8. 2sc3975.pdf Size:59K _panasonic
Power Transistors 2SC3975 Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching Unit: mm 15.0 0.3 5.0 0.2 Features 11.0 0.2 3.2 High-speed switching High collector to base voltage VCBO ? 3.2 0.1 Wide area of safe operation (ASO) Satisfactory linearity of foward current transfer ratio hFE Full-pack package which can be installed to the heat sink w
4.9. 2sc3970.pdf Size:60K _panasonic
Power Transistors 2SC3970, 2SC3970A Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching Unit: mm 10.0 0.2 4.2 0.2 Features 5.5 0.2 2.7 0.2 High-speed switching High collector to base voltage VCBO ? 3.1 0.1 Wide area of safe operation (ASO) Satisfactory linearity of foward current transfer ratio hFE Full-pack package which can be installed to t
4.10. 2sc3973.pdf Size:179K _jmnic
JMnic Product Specification Silicon NPN Power Transistors 2SC3973 2SC3973A DESCRIPTION · ·With TO-220Fa package ·High breakdown voltage ·High speed switching ·Wide area of safe operation APPLICATIONS ·For high breakdown voltate ,high-speed switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-220Fa) and symbol 3 Emitter Absol
4.11. 2sc3972.pdf Size:181K _jmnic
JMnic Product Specification Silicon NPN Power Transistors 2SC3972 2SC3972A DESCRIPTION · ·With TO-220Fa package ·High speed switching ·High VCBO ·Wide area of safe operation APPLICATIONS ·For high breakdown voltate ,high-speed switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-220Fa) and symbol 3 Emitter Absolute maximum r
4.12. 2sc3979.pdf Size:147K _jmnic
Product Specification www.jmnic.com Silicon Power Transistors 2SC3979 DESCRIPTION · ·With TO-220Fa package ·High breakdown voltage ·High speed switching ·Wide area of safe operation (SOA) ·Full-pack package which can be installed to the heak sink with one screw PINNING PIN DESCRIPTION 1 Base 2 Collector 3 emitter Fig.1 simplified outline (TO-220Fa) and symbol ABSOLU
4.13. 2sc3970.pdf Size:181K _jmnic
JMnic Product Specification Silicon NPN Power Transistors 2SC3970 2SC3970A DESCRIPTION · ·With TO-220Fa package ·High speed switching ·High VCBO ·Wide area of safe operation APPLICATIONS ·For high breakdown voltate ,high-speed switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-220Fa) and symbol 3 Emitter Absolute maximum
4.14. 2sc3973b.pdf Size:117K _inchange_semiconductor
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3973B DESCRIPTION Ў¤ With TO-220Fa package Ў¤ High voltage,high speed Ў¤ Wide area of safe operation APPLICATIONS Ў¤ For high voltage,high speed switching applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-220Fa) and symbol DESCRIPTION Ў
4.15. 2sc3973 2sc3973a.pdf Size:142K _inchange_semiconductor
Inchange Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION Ў¤ With TO-220Fa package Ў¤ High breakdown voltage Ў¤ High speed switching Ў¤ Wide area of safe operation APPLICATIONS Ў¤ For high breakdown voltate ,high-speed switching applications PINNING PIN 1 2 3 DESCRIPTION Base Collector Emitter 2SC3973 2SC3973A Ў¤ Fig.1 simplified outline (TO-
4.16. 2sc3979.pdf Size:140K _inchange_semiconductor
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3979 DESCRIPTION Ў¤ With TO-220Fa package Ў¤ High breakdown voltage Ў¤ High speed switching Ў¤ Wide area of safe operation APPLICATIONS Ў¤ For high breakdown voltage high-speed switching applications PINNING PIN 1 2 3 DESCRIPTION Base Collector Emitter Fig.1 simplified outline (TO-220Fa) and symbol
4.17. 2sc3975.pdf Size:260K _inchange_semiconductor
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC3975 DESCRIPTION · ·Collector-Base Breakdown Voltage- : V(BR)CBO= 800V(Min.) ·Wide Area of Safe Operation ·High Speed Switching APPLICATIONS ·Designed for high speed switching applications. ABSOLUTE MAXIMUM RATINGS (Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 800 V V
4.18. 2sc3970 2sc3970a.pdf Size:144K _inchange_semiconductor
Inchange Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION Ў¤ With TO-220Fa package Ў¤ High speed switching Ў¤ High VCBO Ў¤ Wide area of safe operation APPLICATIONS Ў¤ For high breakdown voltate ,high-speed switching applications PINNING PIN 1 2 3 DESCRIPTION Base Collector Emitter 2SC3970 2SC3970A Ў¤ Fig.1 simplified outline (TO-220Fa) and sy
4.19. 2sc3972 2sc3972a.pdf Size:145K _inchange_semiconductor
Inchange Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION Ў¤ With TO-220Fa package Ў¤ High speed switching Ў¤ High VCBO Ў¤ Wide area of safe operation APPLICATIONS Ў¤ For high breakdown voltate ,high-speed switching applications PINNING PIN 1 2 3 DESCRIPTION Base Collector Emitter 2SC3972 2SC3972A Ў¤ Fig.1 simplified outline (TO-220Fa) and sy
Datasheet: 2SC3967 , 2SC3968 , 2SC3969 , 2SC397 , 2SC3970 , 2SC3971 , 2SC3972 , 2SC3973 , BC547C , 2SC3975 , 2SC3976 , 2SC3977 , 2SC3978 , 2SC3979 , 2SC397D , 2SC398 , 2SC3980 .
