2SC3983 Datasheet. Specs and Replacement
Type Designator: 2SC3983 📄📄
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.3 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector Current |Ic max|: 0.45 A
Max. Operating Junction Temperature (Tj): 100 °C
Electrical Characteristics
Transition Frequency (ft): 180 MHz
Forward Current Transfer Ratio (hFE), MIN: 30
Noise Figure, dB: -
Package: TO92
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2SC3983 datasheet
8.1. Size:24K sanyo
2sc3989.pdf 
Ordering number EN2556 NPN Triple Diffused Planar Silicon Transistor 2SC3989 500V/25A Switching Regulator Applications Features Package Dimensions High breakdown voltage, high reliability. unit mm Fast switching speed (tf=0.1 s typ). 2048B Adoption of MBIT process. [2SC3989] 1 Base 2 Collector 3 Emitter SANYO TO-3PBL Specifications Absolute Maximum Ratings ... See More ⇒
8.2. Size:114K sanyo
2sc3988.pdf
Ordering number EN2232B NPN Triple Diffused Planar Silicon Transistor 2SC3988 500V/25A Switching Regulator Applications Features Package Dimensions High breakdown voltage, high reliability. unit mm Fast switching speed. 2022A Wide ASO. [2SC3988] Adoption of MBIT process. 1 Base 2 Collector 3 Emitter SANYO TO-3PB Specifications Absolute Maximum Ratings at... See More ⇒
8.3. Size:90K sanyo
2sc3986.pdf
Ordering number EN2220B NPN Planar Silicon Darlington Transistor 2SC3986 Driver Applications Applications Package Dimensions Suitable for use in switching of L load (motor unit mm drivers, printer hammer drivers, relay drivers). 2041A [2SC3986] Features High DC current gain. Large current capacity and wide ASO. On-chip Zener diode of 60 10V between collector and ... See More ⇒
8.4. Size:83K sanyo
2sc3987.pdf
Ordering number EN2221B NPN Planar Silicon Darlington Transistor 2SC3987 Driver Applications Applications Package Dimensions Suitable for use in switching of L load (motor unit mm drivers, printer hammer drivers, relay drivers). 2041A [2SC3987] Features High DC current gain. Large current capacity and wide ASO. On-chip Zener diode of 60 10V between collector and ... See More ⇒
8.5. Size:60K panasonic
2sc3981.pdf
Power Transistors 2SC3981, 2SC3981A Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching Unit mm Features 15.0 0.3 5.0 0.2 High-speed switching 11.0 0.2 3.2 High collector to base voltage VCBO Wide area of safe operation (ASO) 3.2 0.1 Satisfactory linearity of foward current transfer ratio hFE Full-pack package which can be installed ... See More ⇒
8.6. Size:62K panasonic
2sc3982.pdf
Power Transistors 2SC3982, 2SC3982A Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching Unit mm 3.3 0.2 20.0 0.5 5.0 0.3 3.0 Features High-speed switching High collector to base voltage VCBO Wide area of safe operation (ASO) 1.5 Satisfactory linearity of foward current transfer ratio hFE 1.5 2.0 0.3 Absolute Maximum Ratings (TC=2... See More ⇒
8.7. Size:59K panasonic
2sc3980.pdf
Power Transistors 2SC3980, 2SC3980A Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching Unit mm Features 15.0 0.3 5.0 0.2 High-speed switching 11.0 0.2 3.2 High collector to base voltage VCBO Wide area of safe operation (ASO) 3.2 0.1 Satisfactory linearity of foward current transfer ratio hFE Full-pack package which can be installed ... See More ⇒
8.8. Size:119K jmnic
2sc3988.pdf
Product Specification www.jmnic.com Silicon NPN Power Transistors 2SC3988 DESCRIPTION With TO-220Fa package High breakdown voltage high reliability. Wide ASO (Safe Operating Area) Fast switching speed APPLICATIONS 500V/25A Switching Regulator Applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Fig.1 simplified ou... See More ⇒
8.9. Size:211K inchange semiconductor
2sc3981.pdf
isc Silicon NPN Power Transistor 2SC3981 DESCRIPTION Collector-Base Breakdown Voltage- V = 900V(Min.) (BR)CBO Wide Area of Safe Operation High Speed Switching Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high speed switching applications. ABSOLUTE MAXIMUM RATINGS (T =25 ) a SYMBOL PARAMETER VALUE UNIT ... See More ⇒
8.10. Size:211K inchange semiconductor
2sc3980.pdf
isc Silicon NPN Power Transistor 2SC3980 DESCRIPTION Collector-Base Breakdown Voltage- V = 900V(Min.) (BR)CBO Wide Area of Safe Operation High Speed Switching Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high speed switching applications. ABSOLUTE MAXIMUM RATINGS (T =25 ) a SYMBOL PARAMETER VALUE UNIT ... See More ⇒
8.11. Size:216K inchange semiconductor
2sc3989.pdf
isc Silicon NPN Power Transistor 2SC3989 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 500V(Min) (BR)CEO High Switching Speed Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for switching regulator and general purpose applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBO... See More ⇒
8.12. Size:211K inchange semiconductor
2sc3988.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3988 DESCRIPTION With TO-3PN package High breakdown voltage high reliability. Wide area of safe operation Fast switching speed APPLICATIONS 500V/25A switching regulator applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (... See More ⇒
Detailed specifications: 2SC3977, 2SC3978, 2SC3979, 2SC397D, 2SC398, 2SC3980, 2SC3981, 2SC3982, BC556, 2SC3984, 2SC3985, 2SC3986, 2SC3987, 2SC3988, 2SC3988L, 2SC3988M, 2SC3988N
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