2SC3986 Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SC3986
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 15 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 2 A
Max. Operating Junction Temperature (Tj): 175 °C
Transition Frequency (ft): 180 MHz
Forward Current Transfer Ratio (hFE), MIN: 4000
Noise Figure, dB: -
Package: TO220F
2SC3986 Transistor Equivalent Substitute - Cross-Reference Search
2SC3986 Datasheet (PDF)
2sc3986.pdf
Ordering number:EN2220BNPN Planar Silicon Darlington Transistor2SC3986Driver ApplicationsApplications Package Dimensions Suitable for use in switching of L load (motorunit:mmdrivers, printer hammer drivers, relay drivers).2041A[2SC3986]Features High DC current gain. Large current capacity and wide ASO. On-chip Zener diode of 60 10V between collectorand
2sc3989.pdf
Ordering number:EN2556NPN Triple Diffused Planar Silicon Transistor2SC3989500V/25A Switching Regulator ApplicationsFeatures Package Dimensions High breakdown voltage, high reliability.unit:mm Fast switching speed (tf=0.1 s typ).2048B Adoption of MBIT process.[2SC3989]1 : Base2 : Collector3 : EmitterSANYO : TO-3PBLSpecificationsAbsolute Maximum Ratings
2sc3988.pdf
Ordering number:EN2232BNPN Triple Diffused Planar Silicon Transistor2SC3988500V/25A Switching Regulator ApplicationsFeatures Package Dimensions High breakdown voltage, high reliability.unit:mm Fast switching speed.2022A Wide ASO.[2SC3988] Adoption of MBIT process.1 : Base2 : Collector3 : EmitterSANYO : TO-3PBSpecificationsAbsolute Maximum Ratings at
2sc3987.pdf
Ordering number:EN2221BNPN Planar Silicon Darlington Transistor2SC3987Driver ApplicationsApplications Package Dimensions Suitable for use in switching of L load (motorunit:mmdrivers, printer hammer drivers, relay drivers).2041A[2SC3987]Features High DC current gain. Large current capacity and wide ASO. On-chip Zener diode of 60 10V between collectorand
2sc3981.pdf
Power Transistors2SC3981, 2SC3981ASilicon NPN triple diffusion planar typeFor high breakdown voltage high-speed switchingUnit: mmFeatures15.0 0.3 5.0 0.2High-speed switching11.0 0.2 3.2High collector to base voltage VCBOWide area of safe operation (ASO) 3.2 0.1Satisfactory linearity of foward current transfer ratio hFEFull-pack package which can be installed
2sc3982.pdf
Power Transistors2SC3982, 2SC3982ASilicon NPN triple diffusion planar typeFor high breakdown voltage high-speed switchingUnit: mm 3.3 0.220.0 0.5 5.0 0.33.0FeaturesHigh-speed switchingHigh collector to base voltage VCBOWide area of safe operation (ASO) 1.5Satisfactory linearity of foward current transfer ratio hFE1.52.0 0.3Absolute Maximum Ratings (TC=2
2sc3980.pdf
Power Transistors2SC3980, 2SC3980ASilicon NPN triple diffusion planar typeFor high breakdown voltage high-speed switchingUnit: mmFeatures15.0 0.3 5.0 0.2High-speed switching11.0 0.2 3.2High collector to base voltage VCBOWide area of safe operation (ASO) 3.2 0.1Satisfactory linearity of foward current transfer ratio hFEFull-pack package which can be installed
2sc3988.pdf
Product Specification www.jmnic.com Silicon NPN Power Transistors 2SC3988 DESCRIPTION With TO-220Fa package High breakdown voltage high reliability. Wide ASO (Safe Operating Area) Fast switching speed APPLICATIONS 500V/25A Switching Regulator Applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base 3 EmitterFig.1 simplified ou
2sc3981.pdf
isc Silicon NPN Power Transistor 2SC3981DESCRIPTION Collector-Base Breakdown Voltage-: V = 900V(Min.)(BR)CBOWide Area of Safe OperationHigh Speed SwitchingMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high speed switching applications.ABSOLUTE MAXIMUM RATINGS (T =25)aSYMBOL PARAMETER VALUE UNIT
2sc3980.pdf
isc Silicon NPN Power Transistor 2SC3980DESCRIPTION Collector-Base Breakdown Voltage-: V = 900V(Min.)(BR)CBOWide Area of Safe OperationHigh Speed SwitchingMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high speed switching applications.ABSOLUTE MAXIMUM RATINGS (T =25)aSYMBOL PARAMETER VALUE UNIT
2sc3989.pdf
isc Silicon NPN Power Transistor 2SC3989DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 500V(Min)(BR)CEOHigh Switching SpeedWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching regulator and general purposeapplications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBO
2sc3988.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC3988 DESCRIPTION With TO-3PN package High breakdown voltage high reliability. Wide area of safe operation Fast switching speed APPLICATIONS 500V/25A switching regulator applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (
Datasheet: 2SA1179M4 , 2SA1179M5 , 2SA1179M6 , 2SA1179M7 , 2SA118 , 2SA1180 , 2SA1180A , 2SA1182 , 2N3055 , 2SA1182Y , 2SA1183 , 2SA1184 , 2SA1185 , 2SA1186 , 2SA1186O , 2SA1186P , 2SA1186Y .
