All Transistors. 2SC4006 Datasheet

 

2SC4006 Datasheet, Equivalent, Cross Reference Search

Type Designator: 2SC4006

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 20 W

Maximum Collector-Base Voltage |Vcb|: 42 V

Maximum Collector-Emitter Voltage |Vce|: 42 V

Maximum Emitter-Base Voltage |Veb|: 6 V

Maximum Collector Current |Ic max|: 3 A

Max. Operating Junction Temperature (Tj): 150 ¬įC

Transition Frequency (ft): 180 MHz

Forward Current Transfer Ratio (hFE), MIN: 4000

Noise Figure, dB: -

Package: TO220

2SC4006 Transistor Equivalent Substitute - Cross-Reference Search

 

2SC4006 Datasheet (PDF)

1.1. 2sc4006.pdf Size:79K _sanyo

2SC4006
2SC4006

Ordering number:EN2272A NPN Planar Type Silicon Darlington Transistor 2SC4006 Driver Applications Applications Package Dimensions ∑ Suitable for use in switching of L load (motor unit:mm drivers, printer hammer drivers, relay drivers). 2041A [2SC4006] 4.5 10.0 Features 2.8 3.2 ∑ High DC current gain. ∑ Large current capacity and wide ASO. ∑ On-chip Zener diode of 50Ī 8V betwee

4.1. 2sc4002.pdf Size:77K _sanyo

2SC4006
2SC4006

Ordering number:EN2960 NPN Triple Diffused Planar Silicon Transistor 2SC4002 High-Voltage Driver Applications Features Package Dimensions ∑ High breakdown voltage. unit:mm ∑ Adoption of MBIT process. 2003B ∑ Excellent hFE linearity. [2SC4002] 5.0 4.0 4.0 0.45 0.5 0.44 0.45 1 : Emitter 2 : Collector 3 : Base 1 2 3 SANYO : NP JEDEC : TO-92 1.3 1.3 EIAJ : SC-43 Specificat

4.2. 2sc4005.pdf Size:86K _sanyo

2SC4006
2SC4006

Ordering number:EN2271A NPN Planar Type Silicon Darlington Transistor 2SC4005 Driver Applications Applications Package Dimensions ∑ Suitable for use in switching of L load (motor unit:mm drivers, printer hammer drivers, relay drivers). 2041A [2SC4005] 4.5 10.0 Features 2.8 3.2 ∑ High DC current gain. ∑ Large current capacity and wide ASO. ∑ On-chip Zener diode of 50Ī 8V betwee

4.3. 2sc4003.pdf Size:79K _sanyo

2SC4006
2SC4006

Ordering number:EN2959A NPN Triple Diffused Planar Silicon Transistor 2SC4003 High-Voltage Driver Applications Features Package Dimensions ∑ High breakdown voltage. unit:mm ∑ Adoption of MBIT process. 2045B ∑ Excellent hFE linearity. [2SC4003] 1 : Base 2 : Collector 3 : Emitter 4 : Collector SANYO : TP unit:mm 2044B [2SC4003] 1 : Base 2 : Collector 3 : Emitter 4 : Collecto

4.4. 2sc4001.pdf Size:130K _nec

2SC4006
2SC4006

4.5. 2sc4004.pdf Size:59K _panasonic

2SC4006
2SC4006

Power Transistors 2SC4004 Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching Unit: mm 10.0Ī 0.2 4.2Ī 0.2 5.5Ī 0.2 2.7Ī 0.2 Features High-speed switching High collector to base voltage VCBO ? 3.1Ī 0.1 Wide area of safe operation (ASO) Satisfactory linearity of foward current transfer ratio hFE Full-pack package which can be installed to the heat si

4.6. 2sc4004.pdf Size:156K _jmnic

2SC4006
2SC4006

Product Specification www.jmnic.com Silicon NPN Power Transistors 2SC4004 DESCRIPTION ·With TO-220Fa package ·Satisfactory linearity of foward current transfer ratio hFE · Wide area of safe operation (ASO) ·High-speed switching ·High collector to base voltage VCBO APPLICATIONS ·For high breakdown voltage high-speed switching PINNING PIN DESCRIPTION 1 Base 2 Collector

4.7. 2sc4007.pdf Size:272K _inchange_semiconductor

2SC4006
2SC4006

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC4007 DESCRIPTION ·Low Collector Saturation Voltage : VCE(sat)= 1.0V(Max)@ IC= 2A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V (Min) ·Wide Area of Safe Operation ·Complement to Type 2SA1634 APPLICATIONS ·Designed for audio and general purpose applications ABSOLUTE MAXIMUM RATING

4.8. 2sc4008.pdf Size:267K _inchange_semiconductor

2SC4006
2SC4006

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC4008 DESCRIPTION ·Low Collector Saturation Voltage : VCE(sat)= 1.0V(Max)@ IC= 2A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V (Min) ·Wide Area of Safe Operation ·Complement to Type 2SA1635 APPLICATIONS ·Designed for audio and general purpose applications ABSOLUTE MAXIMUM RATING

4.9. 2sc4004.pdf Size:119K _inchange_semiconductor

2SC4006
2SC4006

Inchange Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION Ў¤ With TO-220Fa package Ў¤ Wide area of safe operation (ASO) Ў¤ High-speed switching Ў¤ High collector to base voltage VCBO APPLICATIONS Ў¤ For high breakdown voltage highspeed switching applications PINNING PIN 1 2 3 DESCRIPTION Base Collector Emitter 2SC4004 Fig.1 simplified outline (T

4.10. 2sc4003.pdf Size:197K _lge

2SC4006
2SC4006

2SC4003(NPN) TO-251/TO-252-2L Transistor TO-251 1. BASE 2. COLLECTOR 3. EMITTER 1 2 3 Features High hFE hFE=60 to 200 low VCE(sat) VCE(sat)=0.6V MAXIMUM RATINGS (TA=25? unless otherwise noted) TO-252-2L Symbol Parameter Value Units VCBO Collector-Base Voltage 400 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 0

Datasheet: 2SC40 , 2SC400 , 2SC4000 , 2SC4001 , 2SC4002 , 2SC4003 , 2SC4004 , 2SC4005 , 2N5551 , 2SC4007 , 2SC4008 , 2SC4009 , 2SC400D , 2SC400G , 2SC400M , 2SC400O , 2SC400R .

 


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