2SC4035 Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SC4035
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.15 W
Maximum Collector-Base Voltage |Vcb|: 180 V
Maximum Collector Current |Ic max|: 0.03 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 60 MHz
Forward Current Transfer Ratio (hFE), MIN: 45
Noise Figure, dB: -
Package: TO92
2SC4035 Transistor Equivalent Substitute - Cross-Reference Search
2SC4035 Datasheet (PDF)
2sc4031.pdf
Ordering number:EN2478BNPN Triple Diffused Planar Silicon Transistor2SC4031900V/20mA Switching ApplicationsFeatures Package Dimensions High breakdown voltage (VCEO min=900V).unit:mm Small Output Capacitance (Cob typ=1.6pF).2049C Wide ASO (adoption of MBIT process).[2SC4031] High reliability (adoption of HVP process).10.24.51.31.20.80.41 2 31 : B
2sc4030.pdf
Ordering number:EN2477BNPN Triple Diffused Planar Silicon Transistor2SC4030900V/50mA Switching ApplicationsFeatures Package Dimensions High breakdown voltage (VCEO min=900V).unit:mm Small Output Capacitance (Cob typ=2.0pF).2049C Wide ASO (adoption of MBIT process).[2SC4030] High reliability (adoption of HVP process).10.24.51.31.20.80.41 2 31 : B
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
History: MMBT2219A | 2SB295 | ED1501E | ESM837
History: MMBT2219A | 2SB295 | ED1501E | ESM837
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