All Transistors. 2SC4072 Datasheet

 

2SC4072 Datasheet, Equivalent, Cross Reference Search


   Type Designator: 2SC4072
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.25 W
   Maximum Collector-Base Voltage |Vcb|: 25 V
   Maximum Collector-Emitter Voltage |Vce|: 16 V
   Maximum Emitter-Base Voltage |Veb|: 3 V
   Maximum Collector Current |Ic max|: 0.05 A
   Max. Operating Junction Temperature (Tj): 175 °C
   Transition Frequency (ft): 3500 MHz
   Collector Capacitance (Cc): 1 pF
   Forward Current Transfer Ratio (hFE), MIN: 200
   Noise Figure, dB: -
   Package: X106

 2SC4072 Transistor Equivalent Substitute - Cross-Reference Search

   

2SC4072 Datasheet (PDF)

 8.1. Size:47K  sanyo
2sc4071.pdf

2SC4072

 8.2. Size:47K  sanyo
2sa1574 2sc4070.pdf

2SC4072

 8.3. Size:73K  sanyo
2sc4075.pdf

2SC4072
2SC4072

Ordering number:EN2532NPN Triple Diffused Planar Silicon Transistor2SC4075Color TV Chroma Outputand Audio Output ApplicationsApplications Package Dimensions Color TV chroma output, sound output and B/W TVunit:mmvideo output, audio output applications.2041A[2SC4075]4.510.0Features2.83.2 Highly resistant to breakdown and wide ASO. Micaless package facili

 8.4. Size:25K  sanken-ele
2sc4073.pdf

2SC4072

2SC4073Silicon NPN Triple Diffused Planar Transistor (High Voltage and High Speed Switchihg Transistor)Application : Switching Regulator and General PurposeExternal Dimensions FM20(TO220F) Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C)Symbol 2SC4073 Unit Symbol Conditions 2SC4073 Unit0.24.20.210.1c0.52.8VCBO 500 V VCB=500V 100max AICBO

 8.5. Size:647K  semtech
st2sc4073u.pdf

2SC4072
2SC4072

ST 2SC4073U NPN Silicon Epitaxial Planar Transistor General purpose amplifier and high voltage application Absolute Maximum Ratings (Ta = 25) Parameter Symbol Value Unit Collector Base Voltage VCBO 120 V Collector Emitter Voltage VCEO 120 V Emitter Base Voltage VEBO 6 V Collector Current IC 1 A Peak Collector Current (Single pulse, tp = 300 s) ICP 2 A0.5 Ptot W T

 8.6. Size:206K  inchange semiconductor
2sc4073.pdf

2SC4072
2SC4072

isc Silicon NPN Power Transistor 2SC4073DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 400V(Min)(BR)CEOHigh Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching regulator and general purposeapplications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-

 8.7. Size:216K  inchange semiconductor
2sc4075.pdf

2SC4072
2SC4072

isc Silicon NPN Power Transistor 2SC4075DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 300V(Min)(BR)CEOWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for color TV chroma output, sound output andB/W TV video output, audio output applications.ABSOLUTE MAXIMUM RATINGS(T =25)a

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: ED1501E | 2SB295 | ESM837

 

 
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