All Transistors. 2SC4105 Datasheet

 

2SC4105 Datasheet and Replacement


   Type Designator: 2SC4105
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 40 W
   Maximum Collector-Base Voltage |Vcb|: 500 V
   Maximum Collector-Emitter Voltage |Vce|: 400 V
   Maximum Emitter-Base Voltage |Veb|: 7 V
   Maximum Collector Current |Ic max|: 4 A
   Max. Operating Junction Temperature (Tj): 175 °C
   Transition Frequency (ft): 20 MHz
   Collector Capacitance (Cc): 50 pF
   Forward Current Transfer Ratio (hFE), MIN: 15
   Noise Figure, dB: -
   Package: TO220
 

 2SC4105 Substitution

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2SC4105 Datasheet (PDF)

 ..1. Size:92K  sanyo
2sc4105.pdf pdf_icon

2SC4105

Ordering number:EN2470ANPN Triple Diffused Planar Silicon Transistor2SC4105400V/4A Switching Regulator ApplicationsFeatures Package Dimensions High breakdown voltage and high reliability.unit:mm Fast switching speed.2010C Wide ASO.[2SC4105] Adoption of MBIT process.10.24.53.65.11.31.20.8 1 : Base0.42 : Collector1 2 33 : EmitterJEDEC : TO

 ..2. Size:213K  inchange semiconductor
2sc4105.pdf pdf_icon

2SC4105

isc Silicon NPN Power Transistor 2SC4105DESCRIPTIONHigh Collector-Emitter Breakdown Voltage: V = 400V(Min.)(BR)CEOHigh Switching SpeedWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching regulator applicationsABSOLUTE MAXIMUM RATINGS(Ta=25)SYMBOL PARAMETER VALUE UNITV

 8.1. Size:19K  sanyo
2sa1580 2sc4104.pdf pdf_icon

2SC4105

Ordering number:EN3172PNP/NPN Epitaxial Planar Silicon Transistors2SA1580/2SC4104High-Definition CRT Display ApplicationsFeatures Package Dimensions High fT.unit:mm Small reverse transfer capacitance.2018A Adoption of FBET process.[2SA1580/2SC4104]C : CollectorB : BaseE : Emitter( ) : 2SA1580SANYO : CPSpecificationsAbsolute Maximum Ratings at Ta = 25

 8.2. Size:92K  sanyo
2sc4106.pdf pdf_icon

2SC4105

Ordering number:EN2471ANPN Triple Diffused Planar Silicon Transistor2SC4106400V/7A Switching Regulator ApplicationsFeatures Package Dimensions High breakdown voltage and high reliability.unit:mm Fast switching speed.2010C Wide ASO.[2SC4106] Adoption of MBIT process.10.24.53.65.11.31.21 : Base0.80.42 : Collector1 2 33 : EmitterJEDEC : T

Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , MJE340 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .

History: MMBT9018LT1 | TIP29CG | TIP42AG | TIP29C

Keywords - 2SC4105 transistor datasheet

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