2SC4106L Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SC4106L
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 50 W
Maximum Collector-Base Voltage |Vcb|: 500 V
Maximum Collector-Emitter Voltage |Vce|: 400 V
Maximum Emitter-Base Voltage |Veb|: 7 V
Maximum Collector Current |Ic max|: 7 A
Max. Operating Junction Temperature (Tj): 175 °C
Transition Frequency (ft): 20 MHz
Collector Capacitance (Cc): 80 pF
Forward Current Transfer Ratio (hFE), MIN: 15
Noise Figure, dB: -
Package: TO220
2SC4106L Transistor Equivalent Substitute - Cross-Reference Search
2SC4106L Datasheet (PDF)
2sc4106.pdf
Ordering number:EN2471ANPN Triple Diffused Planar Silicon Transistor2SC4106400V/7A Switching Regulator ApplicationsFeatures Package Dimensions High breakdown voltage and high reliability.unit:mm Fast switching speed.2010C Wide ASO.[2SC4106] Adoption of MBIT process.10.24.53.65.11.31.21 : Base0.80.42 : Collector1 2 33 : EmitterJEDEC : T
2sc4106.pdf
isc Silicon NPN Power Transistor 2SC4106DESCRIPTIONHigh Collector-Emitter Breakdown Voltage: V = 400V(Min.)(BR)CEOHigh Switching SpeedWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching regulator applicationsABSOLUTE MAXIMUM RATINGS(Ta=25)SYMBOL PARAMETER VALUE UNITV
2sa1580 2sc4104.pdf
Ordering number:EN3172PNP/NPN Epitaxial Planar Silicon Transistors2SA1580/2SC4104High-Definition CRT Display ApplicationsFeatures Package Dimensions High fT.unit:mm Small reverse transfer capacitance.2018A Adoption of FBET process.[2SA1580/2SC4104]C : CollectorB : BaseE : Emitter( ) : 2SA1580SANYO : CPSpecificationsAbsolute Maximum Ratings at Ta = 25
2sc4108.pdf
Ordering number:EN2473ANPN Triple Diffused Planar Silicon Transistor2SC4108400V/12A Switching Regulator ApplicationsFeatures Package Dimensions High breakdown voltage and high reliability.unit:mm Fast switching speed.2022A Wide ASO.[2SC4108] Adoption of MBIT process.15.63.24.814.02.01.61.42.00.61.01 2 31 : Base0.62 : Collector3 : E
2sc4107.pdf
Ordering number:EN2472ANPN Triple Diffused Planar Silicon Transistor2SC4107400V/10A Switching Regulator ApplicationsFeatures Package Dimensions High breakdown voltage and high reliability.unit:mm Fast switching speed.2010C Wide ASO.[2SC4107] Adoption of MBIT process.10.24.53.65.11.31.21 : Base0.80.42 : Collector1 2 33 : EmitterJEDEC :
2sc4109.pdf
Ordering number:EN2474ANPN Triple Diffused Planar Silicon Transistor2SC4109400V/16A Switching Regulator ApplicationsFeatures Package Dimensions High breakdown voltage and high reliability.unit:mm Fast switching speed.2022A Wide ASO.[2SC4109] Adoption of MBIT process.15.63.24.814.02.01.61.42.00.61.01 2 31 : Base0.62 : Collector3 : E
2sc4105.pdf
Ordering number:EN2470ANPN Triple Diffused Planar Silicon Transistor2SC4105400V/4A Switching Regulator ApplicationsFeatures Package Dimensions High breakdown voltage and high reliability.unit:mm Fast switching speed.2010C Wide ASO.[2SC4105] Adoption of MBIT process.10.24.53.65.11.31.20.8 1 : Base0.42 : Collector1 2 33 : EmitterJEDEC : TO
2sc4102 2sc3906k.pdf
2SC4102 / 2SC3906KDatasheetHigh-voltage Amplifier Transistor (120V, 50mA)lOutlinelParameter Value SOT-323 SOT-346VCEO120VIC50mA 2SC4102 2SC3906K(UMT3) (SMT3) lFeatures lInner circuitl l1)High breakdown voltage. (BVCEO=120V)2)Complements the 2SA1579/2SA1514K.
2sc4102fra.pdf
2SC4102 / 2SC3906K2SC4102FRA / 2SC3906KFRADatasheetNPN 50mA 120V High Voltage Amplifier transistorsAEC-Q101 QualifiedlOutline UMT3 SMT3Parameter ValueCollector CollectorVCEO120VBase BaseIC50mAEmitterEmitter2SC3906K2SC4102FRA 2SC3906KFRA2SC4102SOT-346 (SC-59)SOT-323 (SC-70)lFeatures1) High Breakdown Voltage (VCEO=120V).2) Complementary PNP Types :2
2sc4102 2sc3906k 2sc2389s.pdf
2SC4102 / 2SC3906K / 2SC2389S Transistors High-voltage Amplifier Transistor (120V, 50mA) 2SC4102 / 2SC3906K / 2SC2389S External dimensions (Unit : mm) Features 1) High breakdown voltage. (BVCEO = 120V) 2SC41022) Complements the 2SA1579 / 2SA1514K / 2SA1038S. 1.25 Absolute maximum ratings (Ta=25C) 2.1Parameter Symbol Limits UnitCollector-base voltage VCBO 120 VC
2sc4102.pdf
High-voltage Amplifier Transistor (120V, 50mA) 2SC4102 / 2SC3906K Features Dimensions (Unit : mm) 1) High breakdown voltage. (BVCEO = 120V) 2SC41022) Complements the 2SA1579 / 2SA1514K 1.25Absolute maximum ratings (Ta=25C) 2.1Parameter Symbol Limits UnitCollector-base voltage VCBO 120 VCollector-emitter voltage VCEO 120 V0.1Min.Emitter-base voltage VEBO 5 V
2sc4102.pdf
2SC4102TRANSISTOR (NPN)FEATURES SOT323 High Breakdown Voltage Complements the 2SA1579 MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit V Collector-Base Voltage 120 V CBO1. BASE V Collector-Emitter Voltage 120 V 2. EMITTER CEO3. COLLECTOR V Emitter-Base Voltage 5 V EBOI Collector Current 50 mA CP Collector Power Dissipat
2sc4104.pdf
SMD Type TransistorsNPN Transistors 2SC4104SOT-23Unit: mm+0.12.9 -0.1+0.10.4-0.13 Features High fT Small reverse transfer capacitance1 2+0.1+0.050.95 -0.1 0.1 -0.01 Complementary to 2SA1580+0.11.9 -0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 70 Co
2sc4102.pdf
SMD Type TransistorsNPN Transistors2SC4102 Features High Breakdown Voltage Complementary to 2SA15791 Base2 Emitter3 Collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 120 Collector - Emitter Voltage VCEO 120 V Emitter - Base Voltage VEBO 5 Collector Current - Continuous IC 50mA Collector Current -
2sc4108.pdf
isc Silicon NPN Power Transistor 2SC4108DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 400V(Min)(BR)CEOHigh Switching SpeedWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching regulator and general purposeapplications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBO
2sc4107.pdf
isc Silicon NPN Power Transistor 2SC4107DESCRIPTIONHigh Collector-Emitter Breakdown Voltage: V = 400V(Min.)(BR)CEOHigh Switching SpeedWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching regulator applicationsABSOLUTE MAXIMUM RATINGS(Ta=25)SYMBOL PARAMETER VALUE UNITV
2sc4109.pdf
isc Silicon NPN Power Transistor 2SC4109DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 400V(Min)(BR)CEOHigh Switching SpeedWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching regulator and general purposeapplications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBO
2sc4105.pdf
isc Silicon NPN Power Transistor 2SC4105DESCRIPTIONHigh Collector-Emitter Breakdown Voltage: V = 400V(Min.)(BR)CEOHigh Switching SpeedWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching regulator applicationsABSOLUTE MAXIMUM RATINGS(Ta=25)SYMBOL PARAMETER VALUE UNITV
Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D209L , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
