All Transistors. 2SC4108N Datasheet

 

2SC4108N Datasheet and Replacement


   Type Designator: 2SC4108N
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 100 W
   Maximum Collector-Base Voltage |Vcb|: 500 V
   Maximum Collector-Emitter Voltage |Vce|: 400 V
   Maximum Emitter-Base Voltage |Veb|: 7 V
   Maximum Collector Current |Ic max|: 12 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 20 MHz
   Collector Capacitance (Cc): 160 pF
   Forward Current Transfer Ratio (hFE), MIN: 60
   Noise Figure, dB: -
   Package: TO247
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2SC4108N Datasheet (PDF)

 7.1. Size:93K  sanyo
2sc4108.pdf pdf_icon

2SC4108N

Ordering number:EN2473ANPN Triple Diffused Planar Silicon Transistor2SC4108400V/12A Switching Regulator ApplicationsFeatures Package Dimensions High breakdown voltage and high reliability.unit:mm Fast switching speed.2022A Wide ASO.[2SC4108] Adoption of MBIT process.15.63.24.814.02.01.61.42.00.61.01 2 31 : Base0.62 : Collector3 : E

 7.2. Size:217K  inchange semiconductor
2sc4108.pdf pdf_icon

2SC4108N

isc Silicon NPN Power Transistor 2SC4108DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 400V(Min)(BR)CEOHigh Switching SpeedWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching regulator and general purposeapplications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBO

 8.1. Size:19K  sanyo
2sa1580 2sc4104.pdf pdf_icon

2SC4108N

Ordering number:EN3172PNP/NPN Epitaxial Planar Silicon Transistors2SA1580/2SC4104High-Definition CRT Display ApplicationsFeatures Package Dimensions High fT.unit:mm Small reverse transfer capacitance.2018A Adoption of FBET process.[2SA1580/2SC4104]C : CollectorB : BaseE : Emitter( ) : 2SA1580SANYO : CPSpecificationsAbsolute Maximum Ratings at Ta = 25

 8.2. Size:92K  sanyo
2sc4106.pdf pdf_icon

2SC4108N

Ordering number:EN2471ANPN Triple Diffused Planar Silicon Transistor2SC4106400V/7A Switching Regulator ApplicationsFeatures Package Dimensions High breakdown voltage and high reliability.unit:mm Fast switching speed.2010C Wide ASO.[2SC4106] Adoption of MBIT process.10.24.53.65.11.31.21 : Base0.80.42 : Collector1 2 33 : EmitterJEDEC : T

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: 3DD4617H | TEC9016 | DTA123EET1G | ESM2060 | MP602 | KTA1272 | DM50P

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