All Transistors. 2SC4108N Datasheet

 

2SC4108N Datasheet, Equivalent, Cross Reference Search

Type Designator: 2SC4108N

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 100 W

Maximum Collector-Base Voltage |Vcb|: 500 V

Maximum Collector-Emitter Voltage |Vce|: 400 V

Maximum Emitter-Base Voltage |Veb|: 7 V

Maximum Collector Current |Ic max|: 12 A

Max. Operating Junction Temperature (Tj): 150 °C

Transition Frequency (ft): 20 MHz

Collector Capacitance (Cc): 160 pF

Forward Current Transfer Ratio (hFE), MIN: 60

Noise Figure, dB: -

Package: TO247

2SC4108N Transistor Equivalent Substitute - Cross-Reference Search

 

2SC4108N Datasheet (PDF)

3.1. 2sc4108.pdf Size:93K _sanyo

2SC4108N
2SC4108N

Ordering number:EN2473A NPN Triple Diffused Planar Silicon Transistor 2SC4108 400V/12A Switching Regulator Applications Features Package Dimensions High breakdown voltage and high reliability. unit:mm Fast switching speed. 2022A Wide ASO. [2SC4108] Adoption of MBIT process. 15.6 3.2 4.8 14.0 2.0 1.6 1.4 2.0 0.6 1.0 1 2 3 1 : Base 0.6 2 : Collector 3 : Emitter

3.2. 2sc4108.pdf Size:211K _inchange_semiconductor

2SC4108N
2SC4108N

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4108 DESCRIPTION ·With TO-3PN package ·High reliability ·High breakdown voltage ·Fast switching speed ·Wide ASO(Safe Operating Area) APPLICATIONS ·400V/12A switching regulator applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (

4.1. 2sc4102fra.pdf Size:1329K _update

2SC4108N
2SC4108N

2SC4102 / 2SC3906K 2SC4102FRA / 2SC3906KFRA Datasheet NPN 50mA 120V High Voltage Amplifier transistors AEC-Q101 Qualified lOutline UMT3 SMT3 Parameter Value Collector Collector VCEO 120V Base Base IC 50mA Emitter Emitter 2SC3906K 2SC4102FRA 2SC3906KFRA 2SC4102 SOT-346 (SC-59) SOT-323 (SC-70) lFeatures 1) High Breakdown Voltage (VCEO=120V). 2) Complementary PNP Types : 2

4.2. 2sc4107.pdf Size:93K _sanyo

2SC4108N
2SC4108N

Ordering number:EN2472A NPN Triple Diffused Planar Silicon Transistor 2SC4107 400V/10A Switching Regulator Applications Features Package Dimensions High breakdown voltage and high reliability. unit:mm Fast switching speed. 2010C Wide ASO. [2SC4107] Adoption of MBIT process. 10.2 4.5 3.6 5.1 1.3 1.2 1 : Base 0.8 0.4 2 : Collector 1 2 3 3 : Emitter JEDEC : TO-220A

4.3. 2sc4104.pdf Size:19K _sanyo

2SC4108N
2SC4108N

Ordering number:EN3172 PNP/NPN Epitaxial Planar Silicon Transistors 2SA1580/2SC4104 High-Definition CRT Display Applications Features Package Dimensions High fT. unit:mm Small reverse transfer capacitance. 2018A Adoption of FBET process. [2SA1580/2SC4104] C : Collector B : Base E : Emitter ( ) : 2SA1580 SANYO : CP Specifications Absolute Maximum Ratings at Ta = 25?C Para

4.4. 2sc4105.pdf Size:92K _sanyo

2SC4108N
2SC4108N

Ordering number:EN2470A NPN Triple Diffused Planar Silicon Transistor 2SC4105 400V/4A Switching Regulator Applications Features Package Dimensions High breakdown voltage and high reliability. unit:mm Fast switching speed. 2010C Wide ASO. [2SC4105] Adoption of MBIT process. 10.2 4.5 3.6 5.1 1.3 1.2 0.8 1 : Base 0.4 2 : Collector 1 2 3 3 : Emitter JEDEC : TO-220AB

4.5. 2sc4106.pdf Size:92K _sanyo

2SC4108N
2SC4108N

Ordering number:EN2471A NPN Triple Diffused Planar Silicon Transistor 2SC4106 400V/7A Switching Regulator Applications Features Package Dimensions High breakdown voltage and high reliability. unit:mm Fast switching speed. 2010C Wide ASO. [2SC4106] Adoption of MBIT process. 10.2 4.5 3.6 5.1 1.3 1.2 1 : Base 0.8 0.4 2 : Collector 1 2 3 3 : Emitter JEDEC : TO-220AB

4.6. 2sc4109.pdf Size:95K _sanyo

2SC4108N
2SC4108N

Ordering number:EN2474A NPN Triple Diffused Planar Silicon Transistor 2SC4109 400V/16A Switching Regulator Applications Features Package Dimensions High breakdown voltage and high reliability. unit:mm Fast switching speed. 2022A Wide ASO. [2SC4109] Adoption of MBIT process. 15.6 3.2 4.8 14.0 2.0 1.6 1.4 2.0 0.6 1.0 1 2 3 1 : Base 0.6 2 : Collector 3 : Emitter

4.7. 2sc4102 2sc3906k 2sc2389s.pdf Size:67K _rohm

2SC4108N
2SC4108N

2SC4102 / 2SC3906K / 2SC2389S Transistors High-voltage Amplifier Transistor (120V, 50mA) 2SC4102 / 2SC3906K / 2SC2389S External dimensions (Unit : mm) Features 1) High breakdown voltage. (BVCEO = 120V) 2SC4102 2) Complements the 2SA1579 / 2SA1514K / 2SA1038S. 1.25 Absolute maximum ratings (Ta=25C) 2.1 Parameter Symbol Limits Unit Collector-base voltage VCBO 120 V Colle

4.8. 2sc4102.pdf Size:126K _rohm

2SC4108N
2SC4108N

High-voltage Amplifier Transistor (120V, 50mA) 2SC4102 / 2SC3906K ?Features ?Dimensions (Unit : mm) 1) High breakdown voltage. (BVCEO = 120V) 2SC4102 2) Complements the 2SA1579 / 2SA1514K 1.25 ?Absolute maximum ratings (Ta=25?C) 2.1 Parameter Symbol Limits Unit Collector-base voltage VCBO 120 V Collector-emitter voltage VCEO 120 V 0.1Min. Emitter-base voltage VEBO 5 V Each lead

4.9. 2sc4107.pdf Size:142K _inchange_semiconductor

2SC4108N
2SC4108N

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4107 DESCRIPTION · ·With TO-220C package ·High breakdown voltage and high reliability ·Fast switching speed. ·Wide area of safe operation APPLICATIONS ·400V/10A switching regulator applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Absolute maxi

4.10. 2sc4105.pdf Size:111K _inchange_semiconductor

2SC4108N
2SC4108N

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4105 DESCRIPTION · ·With TO-220C package ·High breakdown voltage ·Fast switching speed ·Wide area of safe operation APPLICATIONS ·For switching regulator applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Absolute maximum ratings(Ta=25?) SYMBO

4.11. 2sc4106.pdf Size:288K _inchange_semiconductor

2SC4108N
2SC4108N

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC4106 DESCRIPTION ·High Collector-Emitter Breakdown Voltage : V(BR)CEO= 400V(Min.) ·High Switching Speed ·Wide Area of Safe Operation APPLICATIONS ·Designed for switching regulator applications ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 500 V

4.12. 2sc4109.pdf Size:158K _inchange_semiconductor

2SC4108N
2SC4108N

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4109 DESCRIPTION ·With TO-3PN package ·High reliability ·High breakdown voltage ·Fast switching speed ·Wide area of safe operation APPLICATIONS ·400V/16A switching regulator applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO

4.13. 2sc4102.pdf Size:463K _htsemi

2SC4108N

2SC4102 TRANSISTOR (NPN) FEATURES SOT–323 ? High Breakdown Voltage ? Complements the 2SA1579 MAXIMUM RATINGS (Ta=25? unless otherwise noted) Symbol Parameter Value Unit V Collector-Base Voltage 120 V CBO 1. BASE V Collector-Emitter Voltage 120 V 2. EMITTER CEO 3. COLLECTOR V Emitter-Base Voltage 5 V EBO I Collector Current 50 mA C P Collector Power Dissipation 200 m

4.14. 2sc4104.pdf Size:343K _kexin

2SC4108N

SMD Type Transistors NPN Transistors 2SC4104 SOT-23 Unit: mm +0.1 2.9 -0.1 +0.1 0.4-0.1 3 ■ Features ● High fT ● Small reverse transfer capacitance 1 2 +0.1 +0.05 0.95 -0.1 0.1 -0.01 ● Complementary to 2SA1580 +0.1 1.9 -0.1 1.Base 2.Emitter 3.collector ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO 70 Co

4.15. 2sc4102.pdf Size:1100K _kexin

2SC4108N
2SC4108N

SMD Type Transistors NPN Transistors 2SC4102 ■ Features ● High Breakdown Voltage ● Complementary to 2SA1579 1 Base 2 Emitter 3 Collector ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO 120 Collector - Emitter Voltage VCEO 120 V Emitter - Base Voltage VEBO 5 Collector Current - Continuous IC 50 mA Collector Current -

Datasheet: 2SC4106N , 2SC4107 , 2SC4107L , 2SC4107M , 2SC4107N , 2SC4108 , 2SC4108L , 2SC4108M , BD679 , 2SC4109 , 2SC4109L , 2SC4109M , 2SC4109N , 2SC410A , 2SC411 , 2SC4110 , 2SC4110L .

 


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