All Transistors. 2SC4110N Datasheet

 

2SC4110N Datasheet, Equivalent, Cross Reference Search


   Type Designator: 2SC4110N
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 160 W
   Maximum Collector-Base Voltage |Vcb|: 500 V
   Maximum Collector-Emitter Voltage |Vce|: 400 V
   Maximum Emitter-Base Voltage |Veb|: 7 V
   Maximum Collector Current |Ic max|: 25 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 20 MHz
   Collector Capacitance (Cc): 300 pF
   Forward Current Transfer Ratio (hFE), MIN: 60
   Noise Figure, dB: -
   Package: TO247

 2SC4110N Transistor Equivalent Substitute - Cross-Reference Search

   

2SC4110N Datasheet (PDF)

 ..1. Size:183K  cn sptech
2sc4110l 2sc4110m 2sc4110n.pdf

2SC4110N
2SC4110N

SPTECH Product SpecificationSPTECH Silicon NPN Power Transistor 2SC4110DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 400V(Min)(BR)CEOHigh Switching SpeedWide Area of Safe OperationAPPLICATIONSDesigned for switching regulator and general purposeapplications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 500 V

 7.1. Size:108K  sanyo
2sc4110.pdf

2SC4110N
2SC4110N

Ordering number:EN2475BNPN Triple Diffused Planar Silicon Transistor2SC4110400V/25A Switching Regulator ApplicationsFeatures Package Dimensions High breakdown voltage and high reliability.unit:mm Fast switching speed.2022A Wide ASO.[2SC4110] Adoption of MBIT process.15.63.24.814.02.01.61.42.00.61.01 2 31 : Base0.62 : Collector3 : E

 7.2. Size:249K  nell
2sc4110b.pdf

2SC4110N
2SC4110N

RoHS 2SC4110B Series RoHS SEMICONDUCTORNell High Power ProductsSilicon NPN triple diffusion planar transistor25A/400V Switching Regulator Applications15.60.44.80.29.62.00.13.20,1TO-3P(B)23FEATURES+0.2+0.20.651.05-0.1-0.1High-speed switchingHigh breakdown voltage and high reliability5.450.1 5.450.11.4Wide SOA (Safe Operation Area)

 7.3. Size:1290K  cn sps
2sc4110t4tl.pdf

2SC4110N
2SC4110N

2SC4110T4TLSilicon NPN Power TransistorDESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 400V(Min)(BR)CEOHigh Switching SpeedWide Area of Safe OperationAPPLICATIONSDesigned for switching regulator and general purposeapplications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 500 VCBOV Collector-Emitter Volta

 7.4. Size:112K  inchange semiconductor
2sc4110-f2.pdf

2SC4110N
2SC4110N

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC4110 DESCRIPTION With TO-3 package Fast switching speed Wide area of safe operation High voltage,high reliability APPLICATIONS For switching regulator applications PINNING(see Fig.2) PIN DESCRIPTION1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector ABSOLUTE

 7.5. Size:226K  inchange semiconductor
2sc4110.pdf

2SC4110N
2SC4110N

isc Silicon NPN Power Transistor 2SC4110DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 400V(Min)(BR)CEOHigh Switching SpeedWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching regulator and general purposeapplications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBO

Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SA1837 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .

 

 
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