2SC4134 Datasheet and Replacement
   Type Designator: 2SC4134
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 10
 W
   Maximum Collector-Base Voltage |Vcb|: 120
 V
   Maximum Collector-Emitter Voltage |Vce|: 100
 V
   Maximum Emitter-Base Voltage |Veb|: 6
 V
   Maximum Collector Current |Ic max|: 1
 A
   Max. Operating Junction Temperature (Tj): 175
 °C
   Transition Frequency (ft): 120
 MHz
   Collector Capacitance (Cc): 8.5
 pF
   Forward Current Transfer Ratio (hFE), MIN: 100
   Noise Figure, dB: -
		   Package: 
DPAK
				
				  
				 
   - 
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2SC4134 Datasheet (PDF)
 ..1.  Size:106K  sanyo
 2sc4134.pdf 
						 
Ordering number:ENN2510APNP/NPN Epitaxial Planar Silicon Transistors2SA1592/2SC4134High-Voltage Switching ApplicationsApplications Package Dimensions  Power supplies, relay drivers, lamp drivers. unit:mm2045BFeatures [2SA1592/2SC4134]  Adoption FBET, MBIT processes.6.52.35.0  High breakdown voltage and large current capacity. 0.54  Fast switching speed.  
 ..2.  Size:401K  onsemi
 2sc4134.pdf 
						 
Ordering number : EN2510B2SC4134Bipolar Transistorhttp://onsemi.com( )100V, 1A, Low VCE sat , NPN Single TP/TP-FAApplications Power supplies, relay drivers, lamp driversFeatures Adoption FBET, MBIT processes  High breakdown voltage and large current capacity Fast switching speed Small and slim package permitting 2SC4134-applied sets to be made more compact
 ..3.  Size:253K  inchange semiconductor
 2sc4134.pdf 
						 
isc Silicon NPN Power Transistor 2SC4134DESCRIPTIONHigh voltage and large current capacityFast-speed switchingSmall and slim package permitting 2SC4134-applied sets to be made more compact100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplies,relay drivers,lamp driversABSOLUTE MAXIMUM RATIN
 0.1.  Size:290K  onsemi
 2sc4134s-e 2sc4134s 2sc4134t-e 2sc4134t.pdf 
						 
Ordering number : EN2510B2SC4134Bipolar Transistorhttp://onsemi.com( )100V, 1A, Low VCE sat , NPN Single TP/TP-FAApplications Power supplies, relay drivers, lamp driversFeatures Adoption FBET, MBIT processes  High breakdown voltage and large current capacity Fast switching speed Small and slim package permitting 2SC4134-applied sets to be made more compact
 8.2.  Size:112K  sanyo
 2sa1593 2sc4135.pdf 
						 
Ordering number:ENN2511APNP/NPN Epitaxial Planar Silicon Transistors2SA1593/2SC4135High-Voltage Switching ApplicationsApplications Package Dimensions  Power supplies, relay derivers, lamp drivers. unit:mm2045BFeatures [2SA1593/2SC4135]  Adoption of FBET, MBIT processes.6.52.35.00.5  High breakdown voltage and large current capacity. 4  Fast switching speed.
 8.3.  Size:156K  sanyo
 2sc4135.pdf 
						 
Ordering number:EN2511APNP/NPN Epitaxial Planar Silicon Transistors2SA1593/2SC4135High-Voltage Switching ApplicationsApplications Package Dimensions  Power supplies, relay derivers, lamp drivers. unit:mm2045BFeatures [2SA1593/2SC4135]  Adoption of FBET, MBIT processes.  High breakdown voltage and large current capacity.  Fast switching speed.  Small and slim pack
 8.4.  Size:34K  rohm
 2sc4132 2sd1857.pdf 
						 
2SC4132 / 2SD1857 Transistors Power Transistor (120V, 1.5A) 2SC4132 / 2SD1857  External dimensions (Unit : mm)  Features 1) High breakdown voltage. (BVCEO = 120V) 2) Low collector output capacitance. 2SC41324.01.0 2.5 0.5 (Typ. 20pF at VCB = 10V) (1)3) High transition frequency. (fT = 80MHz) (2)4) Complements the 2SB1236. (3)(1) Base(Gate)(2) Collector(Drain)RO
 8.5.  Size:63K  rohm
 2sc4132.pdf 
						 
2SC4132 / 2SD1857 / 2SD2343TransistorsPower Transistor (120V, 1.5A)2SC4132 / 2SD1857 / 2SD2343 Features External dimensions (Units : mm)1) High breakdown voltage. (BVCEO = 120V)2) Low collector output capacitance.2SC41324.01.0 2.5 0.5 (Typ. 20pF at VCB = 10V)(1)3) High transition frequency. (fT = 80MHz)(2)4) Complements the 2SB1236.(3)(1) Base(Gate)(2) Collecto
 8.6.  Size:153K  rohm
 2sc4137.pdf 
						 
High frequency amplifier transistor, RF switching (6V, 50mA) 2SC4774 / 2SC4713K Features Dimensions (Unit : mm) 1) Very low output-on resistance (Ron). 2SC47742) Low capacitance. 2.0 0.90.3 0.2 0.7(3)Absolute maximum ratings (Ta=25C) Parameter Symbol Limits Unit (2) (1)Collector-base voltage VCBO 12 V0.65 0.650.15Collector-emitter voltage VCEO 6 V 1.3
 8.7.  Size:295K  onsemi
 2sa1593s-e 2sa1593s 2sa1593t-e 2sa1593t 2sc4135s-e 2sc4135s 2sc4135t-e 2sc4135t.pdf 
						 
Ordering number : EN2511B2SA1593/2SC4135Bipolar Transistorhttp://onsemi.com(-)100V, (-)2A, Low VCE(sat), (PNP)NPN Single TP/TP-FAApplications Power supplies, relay derivers, lamp driversFeatures Adoption of FBET, MBIT processes  High breakdown voltage and large current capacity Fast switching speed Small and slim package permitting 2SA1593/2SC4135-applied se
 8.8.  Size:388K  onsemi
 2sa1593 2sc4135.pdf 
						 
Ordering number : EN2511B2SA1593/2SC4135Bipolar Transistorhttp://onsemi.com(-)100V, (-)2A, Low VCE(sat), (PNP)NPN Single TP/TP-FAApplications Power supplies, relay derivers, lamp driversFeatures Adoption of FBET, MBIT processes  High breakdown voltage and large current capacity Fast switching speed Small and slim package permitting 2SA1593/2SC4135-applied se
 8.9.  Size:190K  jmnic
 2sc4139.pdf 
						 
JMnic Product SpecificationSilicon NPN Power Transistors 2SC4139 DESCRIPTION With TO-3PN package High voltage High speed switching APPLICATIONS For switching regulator and general  purpose applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol 3 EmitterAbsolute maximum ratings(Ta=
 8.10.  Size:25K  sanken-ele
 2sc4139.pdf 
						 
2SC4139Silicon NPN Triple Diffused Planar Transistor (High Voltage and High Speed Switchihg Transistor) Application : Switching Regulator and General PurposeExternal Dimensions MT-100(TO3P) Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C)Symbol 2SC4139 Symbol Conditions 2SC4139 UnitUnit0.24.80.415.60.19.6 2.0VCBO 500 ICBO VCB=500V 100max 
 8.11.  Size:24K  sanken-ele
 2sc4138.pdf 
						 
2SC4138Silicon NPN Triple Diffused Planar Transistor (High Voltage and High Speed Switchihg Transistor)Application : Switching Regulator and General PurposeExternal Dimensions MT-100(TO3P) Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C)Symbol 2SC4138 Unit Symbol Conditions 2SC4138 Unit0.24.80.415.6ICBO 0.1VCBO 500 V VCB=500V 100max  A 2.0
 8.12.  Size:25K  sanken-ele
 2sc4130.pdf 
						 
2SC4130Silicon NPN Epitaxial Planar Transistor (High Voltage and High Speed Switchihg Transistor)Application : Switching Regulator and General Purpose Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C) External Dimensions FM20(TO220F)Symbol 2SC4130 Symbol Conditions 2SC4130Unit Unit0.24.20.210.1c0.52.8VCBO 500 ICBO VCB=500V 100maxV  AVCEO
 8.13.  Size:25K  sanken-ele
 2sc4131.pdf 
						 
LOW VCE (sat) 2SC4131Silicon NPN Epitaxial Planar TransistorApplication : DC-DC Converter, Emergency Lighting Inverter and General Purpose Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C) External Dimensions FM100(TO3PF)Symbol 2SC4131Unit Symbol Conditions 2SC4131 Unit0.20.2 5.515.60.23.45VCBO 100 VCB=100V 10max  AV ICBOVCEO 50 IEBO VEB
 8.14.  Size:1282K  cn sps
 2sc4131t5tl.pdf 
						 
2SC4131T5TLSilicon NPN Power TransistorDESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 50V(Min)(BR)CEOLow Collector Saturation Voltage-: V = 0.5V(Max)@ I = 5ACE(sat) CAPPLICATIONSDesigned for DC-DC converter, emergency lightinginverter and general purpose applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 1
 8.15.  Size:170K  cn sptech
 2sc4131.pdf 
						 
SPTECH Product SpecificationSPTECH Silicon NPN Power Transistor 2SC4131DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 50V(Min)(BR)CEOLow Collector Saturation Voltage-: VCE(sat)= 0.5V(Max)@ IC= 5AAPPLICATIONSDesigned for DC-DC converter, emergencylighting inverter and general purpose applicationsABSOLUTE MAXIMUM RATINGS(Ta=25)SYMBOL PARAMETER VALUE UNITVC
 8.16.  Size:213K  inchange semiconductor
 2sc4139.pdf 
						 
isc Silicon NPN Power Transistor 2SC4139DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 400V(Min)(BR)CEOHigh Switching SpeedHigh ReliabilityMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching regulator and general purposeapplications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER
 8.17.  Size:213K  inchange semiconductor
 2sc4138.pdf 
						 
isc Silicon NPN Power Transistor 2SC4138DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 400V(Min)(BR)CEOHigh Switching SpeedHigh ReliabilityMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching regulator and general purposeapplications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER
 8.18.  Size:206K  inchange semiconductor
 2sc4130.pdf 
						 
isc Silicon NPN Power Transistor 2SC4130DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 400V(Min)(BR)CEOHigh Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching regulator and general purposeapplications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-
 8.19.  Size:217K  inchange semiconductor
 2sc4131.pdf 
						 
isc Silicon NPN Power Transistor 2SC4131DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 50V(Min)(BR)CEOLow Collector Saturation Voltage-: V = 0.5V(Max)@ I = 5ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for DC-DC converter, emergency lightinginverter and general purpose applicationsABSOLUTE
 8.20.  Size:256K  inchange semiconductor
 2sc4135.pdf 
						 
isc Silicon NPN Power Transistor 2SC4135DESCRIPTIONHigh breakdown voltage and large current capacityFast switching speedSmall and slim package100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationComplementary to 2SA1593APPLICATIONSPower supplies, relay drivers,lamp drivers.ABSOLUTE MAXIMUM RATINGS(T =25)a
Datasheet: 2SC4130
, 2SC4131
, 2SC4132
, 2SC4132N
, 2SC4132P
, 2SC4132Q
, 2SC4132R
, 2SC4133
, A1941
, 2SC4134R
, 2SC4134S
, 2SC4134T
, 2SC4135
, 2SC4135R
, 2SC4135S
, 2SC4135T
, 2SC4136
. 
Keywords - 2SC4134 transistor datasheet
 2SC4134 cross reference
 2SC4134 equivalent finder
 2SC4134 lookup
 2SC4134 substitution
 2SC4134 replacement