All Transistors. 2SC4156T Datasheet

 

2SC4156T Datasheet, Equivalent, Cross Reference Search

Type Designator: 2SC4156T

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 0.4 W

Maximum Collector-Base Voltage |Vcb|: 60 V

Maximum Collector-Emitter Voltage |Vce|: 50 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 0.5 A

Max. Operating Junction Temperature (Tj): 125 °C

Transition Frequency (ft): 300 MHz

Collector Capacitance (Cc): 3.7 pF

Forward Current Transfer Ratio (hFE), MIN: 200

Noise Figure, dB: -

Package: SP1

2SC4156T Transistor Equivalent Substitute - Cross-Reference Search

 

2SC4156T Datasheet (PDF)

3.1. 2sc4156.pdf Size:76K _sanyo

2SC4156T
2SC4156T

4.1. 2sc4157.pdf Size:125K _toshiba

2SC4156T
2SC4156T

4.2. 2sc4159.pdf Size:104K _sanyo

2SC4156T
2SC4156T

Ordering number:EN2535 PNP/NPN Epitaxial Planar Silicon Transistors 2SA1606/2SC4159 High-Voltage Switching, AF 100W Driver Applications Applications Package Dimensions High-voltage switching, AF power amplifier, 100W unit:mm output predrivers. 2041 [2SA1606/2SC4159] Features Micaless package facilitating mounting. E : Emitter C : Collector B : Base ( ) : 2SA1606 SANYO : TO-2

4.3. 2sc4152.pdf Size:59K _panasonic

2SC4156T
2SC4156T

Power Transistors 2SC4152 Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching Unit: mm 10.0 0.2 4.2 0.2 Features 5.5 0.2 2.7 0.2 High-speed switching High collector to base voltage VCBO ? 3.1 0.1 Wide area of safe operation (ASO) Satisfactory linearity of foward current transfer ratio hFE Full-pack package which can be installed to the heat si

4.4. 2sc4154.pdf Size:153K _isahaya

2SC4156T
2SC4156T

ISAHAYA ELECTRONICS CORPORATION ISAHAYA ELECTRONICS CORPORATION ISAHAYA ELECTRONICS CORPORATION

4.5. 2sc4155.pdf Size:93K _isahaya

2SC4156T
2SC4156T

ISAHAYA ELECTRONICS CORPORATION ISAHAYA ELECTRONICS CORPORATION http://www.idc-com.co.jp 6-41, TSUKUBA, ISAHAYA, NAGASAKI, 854-0065, JAPAN ??Keep safety in your circuit designs ! ? Isahaya Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semicondu

4.6. 2sc4157.pdf Size:148K _jmnic

2SC4156T
2SC4156T

JMnic Product Specification Silicon NPN Power Transistors 2SC4157 DESCRIPTION ·With TO-3P(I) package ·High VCEO ·High speed switching APPLICATIONS ·Switching regulator and high voltage switching applications ·High speed DC-DC converter applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3P(I)) and symbol

4.7. 2sc4153.pdf Size:180K _jmnic

2SC4156T
2SC4156T

JMnic Product Specification Silicon NPN Power Transistors 2SC4153 DESCRIPTION ·With TO-220F package ·Switching transistor APPLICATIONS ·For humidifier ,DC-DC converter and general purpose applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-220F) and symbol 3 Emitter Absolute maximum ratings (Ta=25?) SYMBOL

4.8. 2sc4150.pdf Size:148K _jmnic

2SC4156T
2SC4156T

JMnic Product Specification Silicon NPN Power Transistors 2SC4150 DESCRIPTION ·With ITO-220 package ·Switching power transistor ·Low saturation voltage PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (ITO-220) and symbol 3 Emitter Absolute maximum ratings(Ta=25?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 60 V VCE

4.9. 2sc4151.pdf Size:148K _jmnic

2SC4156T
2SC4156T

JMnic Product Specification Silicon NPN Power Transistors 2SC4151 DESCRIPTION ·With ITO-220 package ·Switching power transistor ·Low saturation voltage PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (ITO-220) and symbol 3 Emitter Absolute maximum ratings(Ta=25?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 60 V VCE

4.10. 2sc4153.pdf Size:24K _sanken-ele

2SC4156T

2SC4153 Silicon NPN Triple Diffused Planar Transistor ( Switchihg Transistor) Application : Humidifier, DC-DC Converter, and General Purpose Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C) External Dimensions FM20(TO220F) Symbol 2SC4153 Symbol Conditions 2SC4153 Unit 4.2 Unit 0.2 0.2 10.1 c0.5 2.8 VCBO 200 ICBO VCB=200V 100max A V VCEO 120 IEBO VEB=8V 100ma

4.11. 2sc4157.pdf Size:117K _inchange_semiconductor

2SC4156T
2SC4156T

Inchange Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION Ў¤ With TO-3P(I) package Ў¤ High VCEO Ў¤ High speed switching APPLICATIONS Ў¤ Switching regulator and high voltage switching applications Ў¤ High speed DC-DC converter applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION 2SC4157 Fig.1 simplified out

4.12. 2sc4153.pdf Size:144K _inchange_semiconductor

2SC4156T
2SC4156T

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4153 DESCRIPTION Ў¤ With TO-220F package Ў¤ Switching transistor APPLICATIONS Ў¤ For humidifier ,DC-DC converter and general purpose applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-220F) and symbol DESCRIPTION Absolute maximum ratings (Ta

4.13. 2sc4159.pdf Size:231K _inchange_semiconductor

2SC4156T
2SC4156T

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC4159 DESCRIPTION ·High Collector-Emitter Breakdown Voltage- V(BR)CEO= 160V (Min) ·Large Current Capacity ·Complement to Type 2SA1606 APPLICATIONS ·Designed for high-voltage switching, AF power amplifier, 100W output predrivers. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNI

4.14. 2sc4150.pdf Size:116K _inchange_semiconductor

2SC4156T
2SC4156T

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4150 DESCRIPTION Ў¤ With ITO-220 package Ў¤ Switching power transistor Ў¤ Low saturation voltage PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (ITO-220) and symbol DESCRIPTION Absolute maximum ratings(Ta=25Ўж ) SYMBOL VCBO VCEO VEBO IC ICM IB IBM PT Tj Tstg Collector-

4.15. 2sc4151.pdf Size:116K _inchange_semiconductor

2SC4156T
2SC4156T

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4151 DESCRIPTION Ў¤ With ITO-220 package Ў¤ Switching power transistor Ў¤ Low saturation voltage PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (ITO-220) and symbol DESCRIPTION Absolute maximum ratings(Ta=25Ўж ) SYMBOL VCBO VCEO VEBO IC ICM IB IBM PT Tj Tstg Collector-

4.16. 2sc4155a.pdf Size:249K _blue-rocket-elect

2SC4156T
2SC4156T

2SC4155(3DG4155) 2SC4155A(3DG4155A) 硅 NPN 半导体三极管/SILICON NPN TRANSISTOR 用途: 用于集成电路输出信号的低频电压放大。/Purpose: For hybrid IC,small type machine low frequency voltage amplify application. 特点:集电-发射极饱和压降小 Vce sat =0.3Vmax、直流增益线性好、采用 SOT-23 封装便于安 ( ) 装。/Feature:Small collectoe to e

Datasheet: 2SC4151 , 2SC4152 , 2SC4153 , 2SC4154 , 2SC4155 , 2SC4156 , 2SC4156R , 2SC4156S , 2N5401 , 2SC4156U , 2SC4157 , 2SC4158 , 2SC4159 , 2SC4159D , 2SC4159E , 2SC416 , 2SC4160 .

 


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