2N2102S Datasheet. Specs and Replacement

Type Designator: 2N2102S  📄📄 

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.8 W

Maximum Collector-Base Voltage |Vcb|: 120 V

Maximum Collector-Emitter Voltage |Vce|: 60 V

Maximum Emitter-Base Voltage |Veb|: 7 V

Maximum Collector Current |Ic max|: 1 A

Max. Operating Junction Temperature (Tj): 200 °C

Electrical Characteristics

Transition Frequency (ft): 60 MHz

Collector Capacitance (Cc): 8 pF

Forward Current Transfer Ratio (hFE), MIN: 40

Noise Figure, dB: -

Package: TO5

 2N2102S Substitution

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2N2102S datasheet

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2N2102S

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2N2102S

2N2102 EPITAXIAL PLANAR NPN GENERAL PURPOSE AMPLIFIER AND SWITCH DESCRIPTION The 2N2102 is a silicon Planar Epitaxial NPN transistor in Jedec TO-39 metal case. It is intended for a wide variety of small-signall and medium power applications in military and industrial equipments. TO-39 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit VCBO Collec... See More ⇒

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2N2102S

2N2102 EPITAXIAL PLANAR NPN GENERAL PURPOSE AMPLIFIER AND SWITCH DESCRIPTION The 2N2102 is a silicon Planar Epitaxial NPN transistor in Jedec TO-39 metal case. It is intended for a wide variety of small-signall and medium power applications in military and industrial equipments. TO-39 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit VCBO Collec... See More ⇒

 8.4. Size:74K  central

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2N2102S

145 Adams Avenue, Hauppauge, NY 11788 USA Tel (631) 435-1110 Fax (631) 435-1824 ... See More ⇒

Detailed specifications: 2N2099, 2N21, 2N2100, 2N2100A, 2N2101, 2N2102, 2N2102A, 2N2102L, TIP142, 2N2104, 2N2104A, 2N2104S, 2N2105, 2N2106, 2N2107, 2N2108, 2N2109

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