2SC4159 Datasheet. Specs and Replacement

Type Designator: 2SC4159  📄📄 

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 15 W

Maximum Collector-Base Voltage |Vcb|: 180 V

Maximum Collector-Emitter Voltage |Vce|: 160 V

Maximum Emitter-Base Voltage |Veb|: 6 V

Maximum Collector Current |Ic max|: 1.5 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 100 MHz

Collector Capacitance (Cc): 23 pF

Forward Current Transfer Ratio (hFE), MIN: 60

Noise Figure, dB: -

Package: TO220F

 2SC4159 Substitution

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2SC4159 datasheet

 ..1. Size:104K  sanyo

2sa1606 2sc4159.pdf pdf_icon

2SC4159

Ordering number EN2535 PNP/NPN Epitaxial Planar Silicon Transistors 2SA1606/2SC4159 High-Voltage Switching, AF 100W Driver Applications Applications Package Dimensions High-voltage switching, AF power amplifier, 100W unit mm output predrivers. 2041 [2SA1606/2SC4159] Features Micaless package facilitating mounting. E Emitter C Collector B Base ( ) 2SA1606 SANYO ... See More ⇒

 ..2. Size:189K  inchange semiconductor

2sc4159.pdf pdf_icon

2SC4159

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4159 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 160V (Min) (BR)CEO Large Current Capacity Complement to Type 2SA1606 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high-voltage switching, AF power amplifier, 100W o... See More ⇒

 8.1. Size:125K  toshiba

2sc4157.pdf pdf_icon

2SC4159

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 8.2. Size:76K  sanyo

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2SC4159

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Detailed specifications: 2SC4155, 2SC4156, 2SC4156R, 2SC4156S, 2SC4156T, 2SC4156U, 2SC4157, 2SC4158, 9014, 2SC4159D, 2SC4159E, 2SC416, 2SC4160, 2SC4160L, 2SC4160M, 2SC4160N, 2SC4161

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