2SC4159E Datasheet and Replacement

Ordering number:EN2535PNP/NPN Epitaxial Planar Silicon Transistors2SA1606/2SC4159High-Voltage Switching, AF 100WDriver ApplicationsApplications Package Dimensions High-voltage switching, AF power amplifier, 100Wunit:mmoutput predrivers.2041[2SA1606/2SC4159]Features Micaless package facilitating mounting.E : EmitterC : CollectorB : Base( ) : 2SA1606SANYO :

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC4159DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-V = 160V (Min)(BR)CEOLarge Current CapacityComplement to Type 2SA1606100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high-voltage switching, AF power amplifier,100W o

Power Transistors2SC4152Silicon NPN triple diffusion planar typeFor high breakdown voltage high-speed switchingUnit: mm10.0 0.2 4.2 0.2Features5.5 0.2 2.7 0.2High-speed switchingHigh collector to base voltage VCBO 3.1 0.1Wide area of safe operation (ASO)Satisfactory linearity of foward current transfer ratio hFEFull-pack package which can be installed to th

ISAHAYA ELECTRONICS CORPORATIONISAHAYA ELECTRONICS CORPORATIONhttp://www.idc-com.co.jp6-41, TSUKUBA, ISAHAYA, NAGASAKI, 854-0065, JAPANKeep safety in your circuit designs !Isahaya Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with

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JMnic Product SpecificationSilicon NPN Power Transistors 2SC4150 DESCRIPTION With ITO-220 package Switching power transistor Low saturation voltage PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (ITO-220) and symbol 3 EmitterAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNITVCBO Collector-base voltage Open emitter 60 V

JMnic Product SpecificationSilicon NPN Power Transistors 2SC4151 DESCRIPTION With ITO-220 package Switching power transistor Low saturation voltage PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (ITO-220) and symbol 3 EmitterAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNITVCBO Collector-base voltage Open emitter 60 V

JMnic Product SpecificationSilicon NPN Power Transistors 2SC4153 DESCRIPTION With TO-220F package Switching transistor APPLICATIONS For humidifier ,DC-DC converter and general purpose applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-220F) and symbol3 EmitterAbsolute maximum ratings (Ta=25) S

JMnic Product SpecificationSilicon NPN Power Transistors 2SC4157 DESCRIPTION With TO-3P(I) package High VCEO High speed switching APPLICATIONS Switching regulator and high voltage switching applications High speed DC-DC converter applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3P(I)) and sym

2SC4153Silicon NPN Triple Diffused Planar Transistor ( Switchihg Transistor)Application : Humidifier, DC-DC Converter, and General Purpose Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C) External Dimensions FM20(TO220F)Symbol 2SC4153 Symbol Conditions 2SC4153 Unit 4.2Unit 0.20.210.1c0.52.8VCBO 200 ICBO VCB=200V 100max AVVCEO 120 IEBO VEB=

2SC4155(3DG4155) 2SC4155A(3DG4155A) NPN /SILICON NPN TRANSISTOR : /Purpose: For hybrid IC,small type machine low frequency voltage amplify application. - Vce sat =0.3Vmax SOT-23 ( )/Feature:Small collectoe to e

INCHANGE Semiconductorisc Silicon NPN Power Transistors 2SC4150DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 40V(Min)CEO(SUS)Collector Current-I = 12A(Max.)CLow Collector Saturation Voltage: V = 0.3V(Max.)@ I = 6ACE(sat) C100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned fo

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4151 DESCRIPTION With ITO-220 package Switching power transistor Low saturation voltage PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (ITO-220) and symbol 3 EmitterAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNITVCBO Collector-base voltage

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC4153DESCRIPTIONLow Collector Saturation Voltage: V = 0.5V(Max)@ I =3ACE(sat) CCollector-Emitter Breakdown Voltage-: V = 120V (Min)(BR)CEOGood Linearity of hFE100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in humid

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC4157DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 450V(Min)(BR)CEOHigh Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulator and high voltage switchingapplications.High speed DC-DC converter app