All Transistors. 2SC4160 Datasheet

 

2SC4160 Datasheet, Equivalent, Cross Reference Search

Type Designator: 2SC4160

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 25 W

Maximum Collector-Base Voltage |Vcb|: 500 V

Maximum Collector-Emitter Voltage |Vce|: 400 V

Maximum Emitter-Base Voltage |Veb|: 7 V

Maximum Collector Current |Ic max|: 4 A

Max. Operating Junction Temperature (Tj): 150 °C

Transition Frequency (ft): 20 MHz

Collector Capacitance (Cc): 50 pF

Forward Current Transfer Ratio (hFE), MIN: 15

Noise Figure, dB: -

Package: ISO220

2SC4160 Transistor Equivalent Substitute - Cross-Reference Search

 

2SC4160 Datasheet (PDF)

..1. 2sc4160.pdf Size:45K _sanyo

2SC4160
2SC4160

Ordering number:ENN2481CNPN Triple Diffused Planar Silicon Transistor2SC4160400V/4A Switching Regulator ApplicationsFeatures Package Dimensions High breakdown voltage.unit:mm High reliability.2041A Fast switching speed (tf=0.1 s typ).[2SC4160] Wide ASO.4.510.02.8 Adoption of MBIT process.3.2 Micaless package facilitating mounting.2.41.6

..2. 2sc4160.pdf Size:136K _jmnic

2SC4160
2SC4160

Product Specification www.jmnic.com Silicon NPN Power Transistors 2SC4160 DESCRIPTION With TO-220F package High breakdown voltage. High reliability. Fast switching speed Wide ASO (Safe Operating Area) APPLICATIONS 400V/4A Switching Regulator Applications PINNING PIN DESCRIPTION1 Base 2 Collector3 EmitterFig.1 simplified outline (TO-220F) and symbol Ab

..3. 2sc4160.pdf Size:190K _inchange_semiconductor

2SC4160
2SC4160

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC4160DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 400V(Min)(BR)CEOHigh Switching SpeedWide Area of Safe Operation100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching regulator and general purposeApplications.

8.1. 2sc4164.pdf Size:99K _sanyo

2SC4160
2SC4160

8.2. 2sc4163.pdf Size:98K _sanyo

2SC4160
2SC4160

 8.3. 2sc4162.pdf Size:98K _sanyo

2SC4160
2SC4160

8.4. 2sc4161.pdf Size:98K _sanyo

2SC4160
2SC4160

 8.5. 2sa1607 2sc4168.pdf Size:149K _sanyo

2SC4160
2SC4160

Ordering number:EN2479APNP/NPN Epitaxial Planar Silicon Transistors2SA1607/2SC4168High-Speed Switching ApplicationsFeatures Package Dimensions Fast switching speed.unit:mm High gain-bandwidth product.2018A Low saturation voltage.[2SA1607/2SC4168]C : CollectorB : BaseE : Emitter( ) : 2SA1607SANYO : CPSpecificationsAbsolute Maximum Ratings at Ta = 25C

8.6. 2sc4169.pdf Size:79K _sanyo

2SC4160
2SC4160

8.7. 2sc4161.pdf Size:138K _jmnic

2SC4160
2SC4160

Product Specification www.jmnic.com Silicon NPN Power Transistors 2SC4161 DESCRIPTION With TO-220F package High breakdown voltage. High reliability. Fast switching speed APPLICATIONS Switching Regulator Applications PINNING PIN DESCRIPTION1 Base 2 Collector3 EmitterFig.1 simplified outline (TO-220F) and symbol Absolute maximum ratings (Ta=25) SYMBOL

8.8. 2sc4168.pdf Size:1072K _kexin

2SC4160
2SC4160

SMD Type TransistorsNPN Transistors 2SC4168SOT-23Unit: mm+0.12.9 -0.10.4+0.1-0.13 Features Fast switching speed. High gain-bandwidth product.1 2+0.1+0.050.95 -0.1 0.1-0.01 Low saturation voltage.+0.11.9 -0.1 Complementary to 2SA1607.1.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit

8.9. 2sc4164.pdf Size:189K _inchange_semiconductor

2SC4160
2SC4160

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC4164DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 400V(Min)(BR)CEOHigh Switching SpeedWide Area of Safe Operation100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching regulator and general purposeapplications.

8.10. 2sc4163.pdf Size:190K _inchange_semiconductor

2SC4160
2SC4160

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC4163DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 400V(Min)(BR)CEOHigh Switching SpeedWide Area of Safe Operation100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching regulator and general purposeapplications.

8.11. 2sc4162.pdf Size:189K _inchange_semiconductor

2SC4160
2SC4160

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC4162DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 400V(Min)(BR)CEOHigh Switching SpeedWide Area of Safe Operation100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching regulator and general purposeapplications.

8.12. 2sc4161.pdf Size:189K _inchange_semiconductor

2SC4160
2SC4160

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC4161DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 400V(Min)(BR)CEOHigh Switching SpeedWide Area of Safe Operation100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching regulator and general purposeapplications.

Datasheet: 2SC4156T , 2SC4156U , 2SC4157 , 2SC4158 , 2SC4159 , 2SC4159D , 2SC4159E , 2SC416 , BF422 , 2SC4160L , 2SC4160M , 2SC4160N , 2SC4161 , 2SC4161L , 2SC4161M , 2SC4161N , 2SC4162 .

 

 
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