2SC4162L Datasheet. Specs and Replacement
Type Designator: 2SC4162L 📄📄
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 35 W
Maximum Collector-Base Voltage |Vcb|: 500 V
Maximum Collector-Emitter Voltage |Vce|: 400 V
Maximum Emitter-Base Voltage |Veb|: 7 V
Maximum Collector Current |Ic max|: 10 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 20 MHz
Collector Capacitance (Cc): 120 pF
Forward Current Transfer Ratio (hFE), MIN: 15
Noise Figure, dB: -
Package: TO220F
- BJT ⓘ Cross-Reference Search
2SC4162L datasheet
7.2. Size:189K inchange semiconductor
2sc4162.pdf 
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4162 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 400V(Min) (BR)CEO High Switching Speed Wide Area of Safe Operation 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for switching regulator and general purpose applications. ... See More ⇒
8.2. Size:45K sanyo
2sc4160.pdf
Ordering number ENN2481C NPN Triple Diffused Planar Silicon Transistor 2SC4160 400V/4A Switching Regulator Applications Features Package Dimensions High breakdown voltage. unit mm High reliability. 2041A Fast switching speed (tf=0.1 s typ). [2SC4160] Wide ASO. 4.5 10.0 2.8 Adoption of MBIT process. 3.2 Micaless package facilitating mounting. 2.4 1.6 ... See More ⇒
8.6. Size:149K sanyo
2sa1607 2sc4168.pdf
Ordering number EN2479A PNP/NPN Epitaxial Planar Silicon Transistors 2SA1607/2SC4168 High-Speed Switching Applications Features Package Dimensions Fast switching speed. unit mm High gain-bandwidth product. 2018A Low saturation voltage. [2SA1607/2SC4168] C Collector B Base E Emitter ( ) 2SA1607 SANYO CP Specifications Absolute Maximum Ratings at Ta = 25 C ... See More ⇒
8.8. Size:136K jmnic
2sc4160.pdf
Product Specification www.jmnic.com Silicon NPN Power Transistors 2SC4160 DESCRIPTION With TO-220F package High breakdown voltage. High reliability. Fast switching speed Wide ASO (Safe Operating Area) APPLICATIONS 400V/4A Switching Regulator Applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-220F) and symbol Ab... See More ⇒
8.9. Size:138K jmnic
2sc4161.pdf
Product Specification www.jmnic.com Silicon NPN Power Transistors 2SC4161 DESCRIPTION With TO-220F package High breakdown voltage. High reliability. Fast switching speed APPLICATIONS Switching Regulator Applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-220F) and symbol Absolute maximum ratings (Ta=25 ) SYMBOL ... See More ⇒
8.10. Size:1072K kexin
2sc4168.pdf
SMD Type Transistors NPN Transistors 2SC4168 SOT-23 Unit mm +0.1 2.9 -0.1 0.4+0.1 -0.1 3 Features Fast switching speed. High gain-bandwidth product. 1 2 +0.1 +0.05 0.95 -0.1 0.1-0.01 Low saturation voltage. +0.1 1.9 -0.1 Complementary to 2SA1607. 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit ... See More ⇒
8.11. Size:190K inchange semiconductor
2sc4160.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4160 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 400V(Min) (BR)CEO High Switching Speed Wide Area of Safe Operation 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for switching regulator and general purpose Applications. ... See More ⇒
8.12. Size:189K inchange semiconductor
2sc4164.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4164 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 400V(Min) (BR)CEO High Switching Speed Wide Area of Safe Operation 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for switching regulator and general purpose applications. ... See More ⇒
8.13. Size:189K inchange semiconductor
2sc4161.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4161 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 400V(Min) (BR)CEO High Switching Speed Wide Area of Safe Operation 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for switching regulator and general purpose applications. ... See More ⇒
8.14. Size:190K inchange semiconductor
2sc4163.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4163 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 400V(Min) (BR)CEO High Switching Speed Wide Area of Safe Operation 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for switching regulator and general purpose applications. ... See More ⇒
Detailed specifications: 2SC4160L, 2SC4160M, 2SC4160N, 2SC4161, 2SC4161L, 2SC4161M, 2SC4161N, 2SC4162, 2SC5198, 2SC4162M, 2SC4162N, 2SC4163, 2SC4163L, 2SC4163M, 2SC4163N, 2SC4164, 2SC4164L
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