All Transistors. 2SC4164M Datasheet

 

2SC4164M Datasheet, Equivalent, Cross Reference Search


   Type Designator: 2SC4164M
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 70 W
   Maximum Collector-Base Voltage |Vcb|: 500 V
   Maximum Collector-Emitter Voltage |Vce|: 400 V
   Maximum Emitter-Base Voltage |Veb|: 7 V
   Maximum Collector Current |Ic max|: 12 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 20 MHz
   Collector Capacitance (Cc): 160 pF
   Forward Current Transfer Ratio (hFE), MIN: 20
   Noise Figure, dB: -
   Package: TO220

 2SC4164M Transistor Equivalent Substitute - Cross-Reference Search

   

2SC4164M Datasheet (PDF)

 7.1. Size:99K  sanyo
2sc4164.pdf

2SC4164M
2SC4164M

 7.2. Size:189K  inchange semiconductor
2sc4164.pdf

2SC4164M
2SC4164M

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC4164DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 400V(Min)(BR)CEOHigh Switching SpeedWide Area of Safe Operation100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching regulator and general purposeapplications.

 8.1. Size:97K  1
2sc4167.pdf

2SC4164M
2SC4164M

 8.2. Size:45K  sanyo
2sc4160.pdf

2SC4164M
2SC4164M

Ordering number:ENN2481CNPN Triple Diffused Planar Silicon Transistor2SC4160400V/4A Switching Regulator ApplicationsFeatures Package Dimensions High breakdown voltage.unit:mm High reliability.2041A Fast switching speed (tf=0.1 s typ).[2SC4160] Wide ASO.4.510.02.8 Adoption of MBIT process.3.2 Micaless package facilitating mounting.2.41.6

 8.3. Size:98K  sanyo
2sc4162.pdf

2SC4164M
2SC4164M

 8.4. Size:79K  sanyo
2sc4169.pdf

2SC4164M
2SC4164M

 8.5. Size:98K  sanyo
2sc4161.pdf

2SC4164M
2SC4164M

 8.6. Size:149K  sanyo
2sa1607 2sc4168.pdf

2SC4164M
2SC4164M

Ordering number:EN2479APNP/NPN Epitaxial Planar Silicon Transistors2SA1607/2SC4168High-Speed Switching ApplicationsFeatures Package Dimensions Fast switching speed.unit:mm High gain-bandwidth product.2018A Low saturation voltage.[2SA1607/2SC4168]C : CollectorB : BaseE : Emitter( ) : 2SA1607SANYO : CPSpecificationsAbsolute Maximum Ratings at Ta = 25C

 8.7. Size:98K  sanyo
2sc4163.pdf

2SC4164M
2SC4164M

 8.8. Size:136K  jmnic
2sc4160.pdf

2SC4164M
2SC4164M

Product Specification www.jmnic.com Silicon NPN Power Transistors 2SC4160 DESCRIPTION With TO-220F package High breakdown voltage. High reliability. Fast switching speed Wide ASO (Safe Operating Area) APPLICATIONS 400V/4A Switching Regulator Applications PINNING PIN DESCRIPTION1 Base 2 Collector3 EmitterFig.1 simplified outline (TO-220F) and symbol Ab

 8.9. Size:138K  jmnic
2sc4161.pdf

2SC4164M
2SC4164M

Product Specification www.jmnic.com Silicon NPN Power Transistors 2SC4161 DESCRIPTION With TO-220F package High breakdown voltage. High reliability. Fast switching speed APPLICATIONS Switching Regulator Applications PINNING PIN DESCRIPTION1 Base 2 Collector3 EmitterFig.1 simplified outline (TO-220F) and symbol Absolute maximum ratings (Ta=25) SYMBOL

 8.10. Size:1072K  kexin
2sc4168.pdf

2SC4164M
2SC4164M

SMD Type TransistorsNPN Transistors 2SC4168SOT-23Unit: mm+0.12.9 -0.10.4+0.1-0.13 Features Fast switching speed. High gain-bandwidth product.1 2+0.1+0.050.95 -0.1 0.1-0.01 Low saturation voltage.+0.11.9 -0.1 Complementary to 2SA1607.1.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit

 8.11. Size:190K  inchange semiconductor
2sc4160.pdf

2SC4164M
2SC4164M

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC4160DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 400V(Min)(BR)CEOHigh Switching SpeedWide Area of Safe Operation100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching regulator and general purposeApplications.

 8.12. Size:189K  inchange semiconductor
2sc4162.pdf

2SC4164M
2SC4164M

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC4162DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 400V(Min)(BR)CEOHigh Switching SpeedWide Area of Safe Operation100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching regulator and general purposeapplications.

 8.13. Size:189K  inchange semiconductor
2sc4161.pdf

2SC4164M
2SC4164M

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC4161DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 400V(Min)(BR)CEOHigh Switching SpeedWide Area of Safe Operation100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching regulator and general purposeapplications.

 8.14. Size:190K  inchange semiconductor
2sc4163.pdf

2SC4164M
2SC4164M

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC4163DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 400V(Min)(BR)CEOHigh Switching SpeedWide Area of Safe Operation100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching regulator and general purposeapplications.

Datasheet: 2SA1801 , 2SA1802 , 2SA1802A , 2SA1803 , 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , BD777 , 2SA1805 , 2SA1805O , 2SA1805R , 2SA1806 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C .

 

 
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