2SC4169 PDF and Equivalents Search

 ..1. Size:79K  sanyo

 2sc4169.pdf

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 8.1. Size:97K  1

 2sc4167.pdf

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 8.2. Size:45K  sanyo

 2sc4160.pdf

Ordering number ENN2481C NPN Triple Diffused Planar Silicon Transistor 2SC4160 400V/4A Switching Regulator Applications Features Package Dimensions High breakdown voltage. unit mm High reliability. 2041A Fast switching speed (tf=0.1 s typ). [2SC4160] Wide ASO. 4.5 10.0 2.8 Adoption of MBIT process. 3.2 Micaless package facilitating mounting. 2.4 1.6 ... See More ⇒

 8.3. Size:98K  sanyo

 2sc4162.pdf

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 8.4. Size:99K  sanyo

 2sc4164.pdf

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 8.5. Size:98K  sanyo

 2sc4161.pdf

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 8.6. Size:149K  sanyo

 2sa1607 2sc4168.pdf

Ordering number EN2479A PNP/NPN Epitaxial Planar Silicon Transistors 2SA1607/2SC4168 High-Speed Switching Applications Features Package Dimensions Fast switching speed. unit mm High gain-bandwidth product. 2018A Low saturation voltage. [2SA1607/2SC4168] C Collector B Base E Emitter ( ) 2SA1607 SANYO CP Specifications Absolute Maximum Ratings at Ta = 25 C ... See More ⇒

 8.7. Size:98K  sanyo

 2sc4163.pdf

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 8.8. Size:136K  jmnic

 2sc4160.pdf

Product Specification www.jmnic.com Silicon NPN Power Transistors 2SC4160 DESCRIPTION With TO-220F package High breakdown voltage. High reliability. Fast switching speed Wide ASO (Safe Operating Area) APPLICATIONS 400V/4A Switching Regulator Applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-220F) and symbol Ab... See More ⇒

 8.9. Size:138K  jmnic

 2sc4161.pdf

Product Specification www.jmnic.com Silicon NPN Power Transistors 2SC4161 DESCRIPTION With TO-220F package High breakdown voltage. High reliability. Fast switching speed APPLICATIONS Switching Regulator Applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-220F) and symbol Absolute maximum ratings (Ta=25 ) SYMBOL ... See More ⇒

 8.10. Size:1072K  kexin

 2sc4168.pdf

SMD Type Transistors NPN Transistors 2SC4168 SOT-23 Unit mm +0.1 2.9 -0.1 0.4+0.1 -0.1 3 Features Fast switching speed. High gain-bandwidth product. 1 2 +0.1 +0.05 0.95 -0.1 0.1-0.01 Low saturation voltage. +0.1 1.9 -0.1 Complementary to 2SA1607. 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit ... See More ⇒

 8.11. Size:190K  inchange semiconductor

 2sc4160.pdf

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4160 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 400V(Min) (BR)CEO High Switching Speed Wide Area of Safe Operation 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for switching regulator and general purpose Applications. ... See More ⇒

 8.12. Size:189K  inchange semiconductor

 2sc4162.pdf

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4162 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 400V(Min) (BR)CEO High Switching Speed Wide Area of Safe Operation 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for switching regulator and general purpose applications. ... See More ⇒

 8.13. Size:189K  inchange semiconductor

 2sc4164.pdf

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4164 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 400V(Min) (BR)CEO High Switching Speed Wide Area of Safe Operation 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for switching regulator and general purpose applications. ... See More ⇒

 8.14. Size:189K  inchange semiconductor

 2sc4161.pdf

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4161 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 400V(Min) (BR)CEO High Switching Speed Wide Area of Safe Operation 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for switching regulator and general purpose applications. ... See More ⇒

 8.15. Size:190K  inchange semiconductor

 2sc4163.pdf

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4163 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 400V(Min) (BR)CEO High Switching Speed Wide Area of Safe Operation 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for switching regulator and general purpose applications. ... See More ⇒