2SC4169 Datasheet and Replacement

   Type Designator: 2SC4169
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 1 W
   Maximum Collector-Base Voltage |Vcb|: 50 V
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Emitter-Base Voltage |Veb|: 6 V
   Maximum Collector Current |Ic max|: 1.2 A
   Max. Operating Junction Temperature (Tj): 175 °C
   Forward Current Transfer Ratio (hFE), MIN: 4000
   Noise Figure, dB: -
   Package: TO92

2SC4169 Substitution

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2SC4169 Datasheet (PDF)

..1. Size:79K sanyo
2sc4169.pdf pdf_icon

8.1. Size:97K 1
2sc4167.pdf pdf_icon

8.2. Size:45K sanyo
2sc4160.pdf pdf_icon

Ordering number:ENN2481CNPN Triple Diffused Planar Silicon Transistor2SC4160400V/4A Switching Regulator ApplicationsFeatures Package Dimensions High breakdown voltage.unit:mm High reliability.2041A Fast switching speed (tf=0.1 s typ).[2SC4160] Wide ASO.4.510.02.8 Adoption of MBIT process.3.2 Micaless package facilitating mounting.2.41.6

8.3. Size:98K sanyo
2sc4162.pdf pdf_icon

8.4. Size:99K sanyo
2sc4164.pdf pdf_icon

8.5. Size:98K sanyo
2sc4161.pdf pdf_icon

8.6. Size:149K sanyo
2sa1607 2sc4168.pdf pdf_icon

Ordering number:EN2479APNP/NPN Epitaxial Planar Silicon Transistors2SA1607/2SC4168High-Speed Switching ApplicationsFeatures Package Dimensions Fast switching speed.unit:mm High gain-bandwidth product.2018A Low saturation voltage.[2SA1607/2SC4168]C : CollectorB : BaseE : Emitter( ) : 2SA1607SANYO : CPSpecificationsAbsolute Maximum Ratings at Ta = 25C

8.7. Size:98K sanyo
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8.8. Size:136K jmnic
2sc4160.pdf pdf_icon

Product Specification www.jmnic.com Silicon NPN Power Transistors 2SC4160 DESCRIPTION With TO-220F package High breakdown voltage. High reliability. Fast switching speed Wide ASO (Safe Operating Area) APPLICATIONS 400V/4A Switching Regulator Applications PINNING PIN DESCRIPTION1 Base 2 Collector3 EmitterFig.1 simplified outline (TO-220F) and symbol Ab

8.9. Size:138K jmnic
2sc4161.pdf pdf_icon

Product Specification www.jmnic.com Silicon NPN Power Transistors 2SC4161 DESCRIPTION With TO-220F package High breakdown voltage. High reliability. Fast switching speed APPLICATIONS Switching Regulator Applications PINNING PIN DESCRIPTION1 Base 2 Collector3 EmitterFig.1 simplified outline (TO-220F) and symbol Absolute maximum ratings (Ta=25) SYMBOL

8.10. Size:1072K kexin
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SMD Type TransistorsNPN Transistors 2SC4168SOT-23Unit: mm+0.12.9 -0.10.4+0.1-0.13 Features Fast switching speed. High gain-bandwidth product.1 2+0.1+0.050.95 -0.1 0.1-0.01 Low saturation voltage.+0.11.9 -0.1 Complementary to 2SA1607.1.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit

8.11. Size:190K inchange semiconductor
2sc4160.pdf pdf_icon

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC4160DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 400V(Min)(BR)CEOHigh Switching SpeedWide Area of Safe Operation100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching regulator and general purposeApplications.

8.12. Size:189K inchange semiconductor
2sc4162.pdf pdf_icon

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC4162DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 400V(Min)(BR)CEOHigh Switching SpeedWide Area of Safe Operation100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching regulator and general purposeapplications.

8.13. Size:189K inchange semiconductor
2sc4164.pdf pdf_icon

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC4164DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 400V(Min)(BR)CEOHigh Switching SpeedWide Area of Safe Operation100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching regulator and general purposeapplications.

8.14. Size:189K inchange semiconductor
2sc4161.pdf pdf_icon

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC4161DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 400V(Min)(BR)CEOHigh Switching SpeedWide Area of Safe Operation100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching regulator and general purposeapplications.

8.15. Size:190K inchange semiconductor
2sc4163.pdf pdf_icon

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC4163DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 400V(Min)(BR)CEOHigh Switching SpeedWide Area of Safe Operation100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching regulator and general purposeapplications.

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , BC546 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .