All Transistors. 2SC4177 Datasheet

 

2SC4177 Datasheet, Equivalent, Cross Reference Search


   Type Designator: 2SC4177
   SMD Transistor Code: L4_L5_L6_L7
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.15 W
   Maximum Collector-Base Voltage |Vcb|: 60 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 125 °C
   Transition Frequency (ft): 250 MHz
   Forward Current Transfer Ratio (hFE), MIN: 200
   Noise Figure, dB: -
   Package: TO236

 2SC4177 Transistor Equivalent Substitute - Cross-Reference Search

   

2SC4177 Datasheet (PDF)

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2sc4177.pdf

2SC4177
2SC4177

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2sc4177.pdf

2SC4177

2SC4177 0.1A , 60V NPN Plastic-Encapsulate Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-323FEATURES High DC Current Gain. AL High Voltage. 33 Complementary to 2SA1611 Top View C B 11 22K EAPPLICATIONS General Purpose Amplification DH JF GCLASSIFICATION OF hFE M

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2sc4177.pdf

2SC4177

2SC4177TRANSISTOR (NPN)FEATURES High DC Current Gain SOT323 Complementary to 2SA1611 High Voltage APPLICATIONS General Purpose Amplification MAXIMUM RATINGS (Ta=25 unless otherwise noted) 1. BASE Symbol Parameter Value Unit 2. EMITTER V Collector-Base Voltage 60 V CBO3. COLLECTOR V Collector-Emitter Voltage 50 V CEOV Emitter-Base Voltage

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2sc4177.pdf

2SC4177
2SC4177

SMD Type TransistorsNPN Transistors2SC4177 Features High DC Current Gain:hFE=200(typ) High Voltage:VCEO=50V Complementary to 2SA16111 Base2 Emitter3 Collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 60 Collector - Emitter Voltage VCEO 50 V Emitter - Base Voltage VEBO 5 Collector Current - Conti

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2SC4177
2SC4177

2SC4177NPN Plastic-Encapsulate TransistorsEncapsulate Transistors FEATURES High DC Current Gain Complementary to 2SA1611 High Voltage APPLICATIONS General Purpose Amplification MAXIMUM RATINGS (Ta=25 unless otherwise noted) unless otherwise noted)ELECTRICAL CHARACTERISTICS (Ta=25ELECTRICAL CHARACTERISTICS (Ta=25 unless otherwise specified) *Pulse test

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2SC4177
2SC4177

2SC41772SC41772SC41772SC4177TRANSISTOR(NPN)2SC417 7FEATURESSOT323 3 High DC Current Gain Complementary to 2SA1611 High Voltage 1. BASE 12. EMITTER APPLICATIONS23. COLLECTOR General Purpose Amplification MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Unit V Collector-Base Voltage 60 V CBOV Collector-Emitter Vo

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2sc4171.pdf

2SC4177
2SC4177

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2sc4172.pdf

2SC4177
2SC4177

Ordering number:EN2546ANPN Triple Diffused Planar Silicon Transistor2SC4172500V/5A Switching Regulator ApplicationsFeatures Package Dimensions High breakdown voltage (VCBO 800V).unit:mm Fast switching speed.2049C Wide ASO.[2SC4172] Suitable for sets whose height is restricted.10.24.51.31.20.80.41 2 3 1 : Base2 : Collector3 : Emitter2.55 2

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2sc4175.pdf

2SC4177
2SC4177

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2sc4178.pdf

2SC4177
2SC4177

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2sc4176.pdf

2SC4177
2SC4177

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2sc4173.pdf

2SC4177
2SC4177

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2sc4179.pdf

2SC4177
2SC4177

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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