2SC4188E Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SC4188E
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 10 W
Maximum Collector-Base Voltage |Vcb|: 200 V
Maximum Collector-Emitter Voltage |Vce|: 200 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 18 MHz
Collector Capacitance (Cc): 260 pF
Forward Current Transfer Ratio (hFE), MIN: 100
Noise Figure, dB: -
Package: TO220
2SC4188E Transistor Equivalent Substitute - Cross-Reference Search
2SC4188E Datasheet (PDF)
2sc4188.pdf
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Ordering number:EN2557BNPN Epitaxial Planar Silicon Transistor2SC4188Ultrahigh-Definition CRT DisplayVideo Output ApplicationsFeatures Package Dimensions High breakdown voltage : VCEO 200V.unit:mm Small reverse transfer capacitance and excellent high2010Cfrequency characteristic : Cre=1.3pF typ.[2SC4188] Adoption of FBET process.JEDEC : TO220AB 1 : BaseEI
2sc4183.pdf
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DATA SHEETSILICON TRANSISTOR2SC4183RF AMPLIFIER FOR UHF TV TUNERNPN SILICON EPITAXIAL TRANSISTORSUPER MINI MOLDDESCRIPTIONThe 2SC4183 is specifically designed for UHF RF amplifier applica- PACKAGE DIMENSIONStions. The 2SC4183 features high gain, low noise, and excellent forward in millimetersAGC characteristics in tiny plastic super mini mold package makes it 2.1 0.1 1.25
2sc3545 2sc4184 ne94430 ne94433.pdf
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NPN SILICON NE944OSCILLATOR AND MIXER TRANSISTOR SERIESDESCRIPTIONFEATURESThe NE944 series of NPN silicon epitaxial bipolar transistors LOW COSTis intended for use in general purpose UHF oscillator and HIGH GAIN BANDWIDTH PRODUCT:mixer applications. It is suitable for automotive keyless entryfT = 2000 MHz TYPand TV tuner designs. LOW COLLECTOR TO BASE TIME CONSTAN
2sc4186.pdf
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DATA SHEETSILICON TRANSISTOR2SC4186UHF OSCILLATOR AND UHF MIXERNPN SILICON EPITAXIAL TRANSISTORMINI MOLDDESCRIPTIONPACKAGE DIMENSIONSThe 2SC4186 is an NPN silicon epitaxial transistor intended for usein millimetersas a UHF oscillator and a mixer in a tuner of a TV receiver. The device2.1 0.1 features stable oscillation and small frequency drift against any change1.2
2sc4185 2sc2148 ne73430 ne73435.pdf
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NPN SILICON GENERAL NE734PURPOSE TRANSISTOR SERIESFEATURES LOW NOISE FIGURE:
2sc4182.pdf
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DATA SHEETSILICON TRANSISTOR2SC4182UHF/VHF OSCILLATOR AND VHF MIXERNPN SILICON EPITAXIAL TRANSISTORSUPER MINI MOLDDESCRIPTIONPACKAGE DIMENSIONSThe 2SC4182 is designed for use as an oscillator or a mixer in a VHFin millimetersTV tuners. Super mini mold package makes it suitable for use in small2.1 0.1 type equipments especially recommended for Hibrid Integrated Circuit
2sc4184.pdf
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DATA SHEETSILICON TRANSISTOR2SC4184UHF OSCILLATOR AND VHF MIXERNPN SILICON EPITAXIAL TRANSISTORSUPER MINI MOLDDESCRIPTIONThe 2SC4184 is designed for use as an oscillator or a mixer in a UHF PACKAGE DIMENSIONSTV tuners. Super mini mold package makes it suitable for use in small in millimeterstype equipments especially recommended for Hibrid Integrated Circuits2.1 0.1and
2sc4187.pdf
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DATA SHEETSILICON TRANSISTOR2SC4187MICROWAVE LOW NOISE AMPLIFIERNPN SILICON EPITAXIAL TRANSISTORSUPER MINI MOLDDESCRIPTIONThe 2SC4187 is designed primarily for use in low voltage and lowPACKAGE DIMENSIONScurrent application up to UHF band. The 2SC4187 is ideal for pagers,in millimeterselectro-optic detector postamplifier applications, and other battery pow-2.1 0.1 er
2sc4185.pdf
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DATA SHEETSILICON TRANSISTOR2SC4185UHF OSCILLATOR AND VHF MIXERNPN SILICON EPITAXIAL TRANSISTORSUPER MINI MOLDDESCRIPTIONThe 2SC4185 is an NPN silicon epitaxial transistor intended for use PACKAGE DIMENSIONSas a UHF oscillator and a mixer in a tuner of a TV receiver. The device in millimetersfeatures stable oscillation and small frequency drift against any change2.1 0.1
2sc4180.pdf
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2SC4180TRANSISTOR (NPN)FEATURES SOT323 High DC Current Gain APPLICATIONS General Purpose Amplification MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit 1. BASE VCBO Collector-Base Voltage 120 V 2. EMITTER VCEO Collector-Emitter Voltage 120 V 3. COLLECTOR V Emitter-Base Voltage 5 V EBOI Collector Current 50 mA CP Collect
2sc4180.pdf
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SMD Type TransistorsNPN Transistors2SC4180 Features High DC Current Gain Complementary to 2SA16121 Base2 Emitter3 Collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 120 Collector - Emitter Voltage VCEO 120 V Emitter - Base Voltage VEBO 5 Collector Current - Continuous IC 50 mA Collector Power Dissip
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
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