2SC4325 Datasheet, Equivalent, Cross Reference Search

2SC4325 Transistor Equivalent Substitute - Cross-Reference Search

2SC4325 Datasheet (PDF)

1.1. 2sc4325.pdf Size:466K _toshiba

2SC4325 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC4325 VHF~UHF Band Low Noise Amplifier Applications Unit: mm • Low noise figure, high gain. • NF = 1.8dB, |S |2 = 7.5dB (f = 2 GHz) 21e Maximum Ratings (Ta = = 25°C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 20 V Collector-emitter voltage VCEO 10 V Emitter-base voltage VEBO 1.5 V

1.2. 2sc4325.pdf Size:1780K _kexin

SMD Type Transistors NPN Transistors 2SC4325 ■ Features ● Collector Current Capability IC=15mA ● Collector Emitter Voltage VCEO=10V 1.Base 2.Emitter 3.Collector ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO 20 Collector - Emitter Voltage VCEO 10 V Emitter - Base Voltage VEBO 1.5 Collector Current - Continuous IC 15

 4.1. 2sc4321.pdf Size:468K _toshiba

2SC4321 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC4321 VHF~UHF Band Low Noise Amplifier Applications Unit: mm • Low noise figure, high gain. • NF = 1.1dB, |S |2 = 13dB (f = 1 GHz) 21e Maximum Ratings (Ta = = 25°C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 20 V Collector-emitter voltage VCEO 10 V Emitter-base voltage VEBO 1.5 V

4.2. 2sc4320.pdf Size:467K _toshiba

2SC4320 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC4320 VHF~UHF Band Low Noise Amplifier Applications Unit: mm • Low noise figure, high gain. • NF = 1.1dB, |S |2 = 15dB (f = 1 GHz) 21e Maximum Ratings (Ta = = 25°C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 20 V Collector-emitter voltage VCEO 10 V Emitter-base voltage VEBO 1.5 V

 4.3. 2sc4324.pdf Size:467K _toshiba

2SC4324 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC4324 VHF~UHF Band Low Noise Amplifier Applications Unit: mm • Low noise figure, high gain. • NF = 1.8dB, |S |2 = 9.5dB (f = 2 GHz) 21e Maximum Ratings (Ta = = 25°C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 20 V Collector-emitter voltage VCEO 10 V Emitter-base voltage VEBO 1.5 V

4.4. 2sc4322.pdf Size:464K _toshiba

2SC4322 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC4322 VHF~UHF Band Low Noise Amplifier Applications Unit: mm • Low noise figure, high gain. • NF = 1.8dB, |S |2 = 7.5dB (f = 2 GHz) 21e Maximum Ratings (Ta = = 25°C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 20 V Collector-emitter voltage VCEO 10 V Emitter-base voltage VEBO 1.5 V

 4.5. 2sc4327.pdf Size:183K _inchange_semiconductor

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4327 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V = 35V(Min) (BR)CEO ·Low Collector Saturation Voltage- : V = 0.5V(Max)@ (I = 5A, I = 0.3A) CE(sat) C B ·Complement to Type 2SA1643 ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed

4.6. 2sc4321.pdf Size:1808K _kexin

SMD Type Transistors NPN Transistors 2SC4321 ■ Features ● Collector Current Capability IC=40mA ● Collector Emitter Voltage VCEO=10V 1.Base 2.Emitter 3.Collector ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO 20 Collector - Emitter Voltage VCEO 10 V Emitter - Base Voltage VEBO 1.5 Collector Current - Continuous IC 40

4.7. 2sc4322.pdf Size:1773K _kexin

SMD Type Transistors NPN Transistors 2SC4322 SOT-23 Unit: mm +0.1 2.9 -0.1 +0.1 0.4-0.1 3 ■ Features ● Collector Current Capability IC=15mA 1 2 ● Collector Emitter Voltage VCEO=10V +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 1.Base 2.Emitter 3.collector ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO 20 Colle

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