2SC4350 Specs and Replacement
Type Designator: 2SC4350
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 40 W
Maximum Collector-Base Voltage |Vcb|: 100 V
Maximum Collector Current |Ic max|: 10 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 10000
Package: TO220
2SC4350 Substitution
- BJT ⓘ Cross-Reference Search
2SC4350 datasheet
JMnic Product Specification Silicon NPN Power Transistors 2SC4350 DESCRIPTION With TO-220 package High DC current gain DARLINGTON APPLICATIONS For high speed power switching applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-220) and symbol 3 Emitter Absolute maximum ratings(Ta=25 ) SYMBOL PAR... See More ⇒
INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SC4350 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 100V(Min) CEO(SUS) High DC Current Gain h = 2000 20000(Min) @I = 5A FE C Fast Switching Speed Good Linearity of h FE Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high-precis... See More ⇒
Power Transistors 2SC4359 Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching Unit mm 15.0 0.3 5.0 0.2 11.0 0.2 (3.2) Features High-speed switching 3.2 0.1 High collector-base voltage (Emitter open) VCBO Wide safe oeration area Satisfactory linearity of forward current transfer ratio hFE 2.0 0.2 2.0 0.1 Absolut... See More ⇒
Detailed specifications: 2SC4344, 2SC4345, 2SC4346, 2SC4347, 2SC4348, 2SC4349, 2SC434A, 2SC435, BD136, 2SC4351, 2SC4352, 2SC4353, 2SC4354, 2SC4355, 2SC4356, 2SC4357, 2SC4358
Keywords - 2SC4350 pdf specs
2SC4350 cross reference
2SC4350 equivalent finder
2SC4350 pdf lookup
2SC4350 substitution
2SC4350 replacement
