2SC4358 Specs and Replacement
Type Designator: 2SC4358
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.2 W
Maximum Collector-Base Voltage |Vcb|: 35 V
Maximum Collector Current |Ic max|: 0.3 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 2500 MHz
Forward Current Transfer Ratio (hFE), MIN: 45
Noise Figure, dB: -
Package: TO220
- BJT ⓘ Cross-Reference Search
2SC4358 datasheet
8.1. Size:206K 1
2sc4359.pdf 

Power Transistors 2SC4359 Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching Unit mm 15.0 0.3 5.0 0.2 11.0 0.2 (3.2) Features High-speed switching 3.2 0.1 High collector-base voltage (Emitter open) VCBO Wide safe oeration area Satisfactory linearity of forward current transfer ratio hFE 2.0 0.2 2.0 0.1 Absolut... See More ⇒
8.3. Size:110K nec
2sc4351.pdf 

DATA SHEET DARLINGTON POWER TRANSISTOR 2SC4351 NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR HIGH-SPEED SWITCHING The 2SC4351 is a high-speed Darlington power transistor. This PACKAGE DRAWING (UNIT mm) transistor is ideal for high-precision control such as PWM control for pulse motors or blushless motor of OA and FA equipment. FEATURES Mold package that does not req... See More ⇒
8.4. Size:152K isahaya
2sc4357.pdf 

ISAHAYA ELECTRONICS CORPORATION ISAHAYA ELECTRONICS CORPORATION ISAHAYA ELECTRONICS CORPORATION http //www.idc-com.co.jp 6-41, TSUKUBA, ISAHAYA, NAGASAKI, 854-0065, JAPAN Keep safety in your circuit designs ! Isahaya Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble ... See More ⇒
8.5. Size:149K isahaya
2sc4356.pdf 

ISAHAYA ELECTRONICS CORPORATION ISAHAYA ELECTRONICS CORPORATION ISAHAYA ELECTRONICS CORPORATION http //www.idc-com.co.jp 6-41, TSUKUBA, ISAHAYA, NAGASAKI, 854-0065, JAPAN Keep safety in your circuit designs ! Isahaya Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble ... See More ⇒
8.6. Size:153K jmnic
2sc4350.pdf 

JMnic Product Specification Silicon NPN Power Transistors 2SC4350 DESCRIPTION With TO-220 package High DC current gain DARLINGTON APPLICATIONS For high speed power switching applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-220) and symbol 3 Emitter Absolute maximum ratings(Ta=25 ) SYMBOL PAR... See More ⇒
8.7. Size:1063K kexin
2sc4357.pdf 

SMD Type Transistors NPN Transistors 2SC4357 SOT-89 Unit mm 1.70 0.1 Features Collector Current Capability IC=2A Collector Emitter Voltage VCEO=60V 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 60 Collector - Emitter Voltage VCEO 60 V Emitter - Base Voltage VEBO... See More ⇒
8.8. Size:191K inchange semiconductor
2sc4350.pdf 

INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SC4350 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 100V(Min) CEO(SUS) High DC Current Gain h = 2000 20000(Min) @I = 5A FE C Fast Switching Speed Good Linearity of h FE Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high-precis... See More ⇒
Detailed specifications: 2SC4350
, 2SC4351
, 2SC4352
, 2SC4353
, 2SC4354
, 2SC4355
, 2SC4356
, 2SC4357
, BC547
, 2SC4359
, 2SC436
, 2SC4360
, 2SC4361
, 2SC4362
, 2SC4363
, 2SC4364
, 2SC4365
.
Keywords - 2SC4358 pdf specs
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