All Transistors. 2SC4359 Datasheet

 

2SC4359 Datasheet, Equivalent, Cross Reference Search


   Type Designator: 2SC4359
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 80 W
   Maximum Collector-Base Voltage |Vcb|: 900 V
   Maximum Collector-Emitter Voltage |Vce|: 800 V
   Maximum Collector Current |Ic max|: 3 A
   Max. Operating Junction Temperature (Tj): 200 °C
   Forward Current Transfer Ratio (hFE), MIN: 50
   Noise Figure, dB: -
   Package: X104

 2SC4359 Transistor Equivalent Substitute - Cross-Reference Search

   

2SC4359 Datasheet (PDF)

 8.1. Size:110K  nec
2sc4351.pdf

2SC4359
2SC4359

DATA SHEETDARLINGTON POWER TRANSISTOR2SC4351NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION)FOR HIGH-SPEED SWITCHINGThe 2SC4351 is a high-speed Darlington power transistor. This PACKAGE DRAWING (UNIT: mm)transistor is ideal for high-precision control such as PWM control forpulse motors or blushless motor of OA and FA equipment.FEATURES Mold package that does not req

 8.2. Size:56K  panasonic
2sc4358.pdf

2SC4359

 8.3. Size:152K  isahaya
2sc4357.pdf

2SC4359
2SC4359

ISAHAYA ELECTRONICS CORPORATIONISAHAYA ELECTRONICS CORPORATIONISAHAYA ELECTRONICS CORPORATIONhttp://www.idc-com.co.jp6-41, TSUKUBA, ISAHAYA, NAGASAKI, 854-0065, JAPANKeep safety in your circuit designs !Isahaya Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble

 8.4. Size:149K  isahaya
2sc4356.pdf

2SC4359
2SC4359

ISAHAYA ELECTRONICS CORPORATIONISAHAYA ELECTRONICS CORPORATIONISAHAYA ELECTRONICS CORPORATIONhttp://www.idc-com.co.jp6-41, TSUKUBA, ISAHAYA, NAGASAKI, 854-0065, JAPANKeep safety in your circuit designs !Isahaya Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble

 8.5. Size:153K  jmnic
2sc4350.pdf

2SC4359
2SC4359

JMnic Product SpecificationSilicon NPN Power Transistors 2SC4350 DESCRIPTION With TO-220 package High DC current gain DARLINGTON APPLICATIONS For high speed power switching applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-220) and symbol3 EmitterAbsolute maximum ratings(Ta=25) SYMBOL PAR

 8.6. Size:1063K  kexin
2sc4357.pdf

2SC4359
2SC4359

SMD Type TransistorsNPN Transistors2SC4357SOT-89Unit:mm1.70 0.1 Features Collector Current Capability IC=2A Collector Emitter Voltage VCEO=60V0.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 60 Collector - Emitter Voltage VCEO 60 V Emitter - Base Voltage VEBO

 8.7. Size:191K  inchange semiconductor
2sc4350.pdf

2SC4359
2SC4359

INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor 2SC4350DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 100V(Min)CEO(SUS)High DC Current Gain: h = 2000~20000(Min) @I = 5AFE CFast Switching SpeedGood Linearity of hFEMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high-precis

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , TIP31 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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