All Transistors. 2SC4399-4 Datasheet

 

2SC4399-4 Datasheet and Replacement


   Type Designator: 2SC4399-4
   SMD Transistor Code: F4
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.15 W
   Maximum Collector-Base Voltage |Vcb|: 30 V
   Maximum Collector-Emitter Voltage |Vce|: 20 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.03 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 320 MHz
   Collector Capacitance (Cc): 1.2 pF
   Forward Current Transfer Ratio (hFE), MIN: 90
   Noise Figure, dB: -
   Package: TO323
 

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2SC4399-4 Datasheet (PDF)

 7.1. Size:153K  sanyo
2sc4399.pdf pdf_icon

2SC4399-4

Ordering number:EN3020NPN Epitaxial Planar Silicon Transistor2SC4399High-FrequencyGeneral-Purpose Amplifier ApplicationsFeatures Package Dimensions High power gain : PG=25dB typ (f=100MHz).unit:mm Very small-sized package permitting the 2SC4399-2059Bapplied sets to be made small and slim.[2SC4399]0.30.1530~0.11 20.3 0.60.65 0.650.92.01 : Base2 :

 8.1. Size:465K  toshiba
2sc4394.pdf pdf_icon

2SC4399-4

2SC4394 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC4394 VHF~UHF Band Low Noise Amplifier Applications Unit: mm Low noise figure, high cain. NF = 1.1dB, |S |2 = 11dB (f = 1 GHz) 21eMaximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-base voltage VCBO 20 VCollector-emitter voltage VCEO 12 VEmitter-base voltage VEBO 3 VC

 8.2. Size:318K  toshiba
2sc4393.pdf pdf_icon

2SC4399-4

2SC4393 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC4393 VHF~UHF Band Low Noise Amplifier Applications Unit: mm Low noise figure. NF = 1.5dB, |S |2 = 16dB (f = 500 MHz) 21e NF = 1.7dB, |S |2 = 10.5dB (f = 1000 MHz) 21eMaximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-base voltage VCBO 17 VCollector-emitter voltage

 8.3. Size:91K  sanyo
2sc4390.pdf pdf_icon

2SC4399-4

Ordering number:EN2958ANPN Epitaxial Planar Silicon Transistor2SC4390High-hFE, AF Amplifier ApplicationsFeatures Package Dimensions Adoption of MBIT process.unit:mm High DC current gain (hFE=800 to 3200).2038A Large current capacity (IC=2A).[2SC4390] Low collector-to-emitter saturation voltage4.5(VCE(sat) 0.3V). 1.51.6 High VEBO (VEBO 15V).0.

Datasheet: 2SC4392 , 2SC4393 , 2SC4394 , 2SC4396 , 2SC4397 , 2SC4398 , 2SC4399 , 2SC4399-3 , BC546 , 2SC4399-5 , 2SC44 , 2SC440 , 2SC4400 , 2SC4400-3 , 2SC4400-4 , 2SC4400-5 , 2SC4401 .

History: BLW14 | U2T6O1 | BCF93 | BDY15C | BF182 | 2SC1758 | U2TB408

Keywords - 2SC4399-4 transistor datasheet

 2SC4399-4 cross reference
 2SC4399-4 equivalent finder
 2SC4399-4 lookup
 2SC4399-4 substitution
 2SC4399-4 replacement

 

 
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