2SC4408 Datasheet and Replacement
Type Designator: 2SC4408
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.9 W
Maximum Collector-Base Voltage |Vcb|: 80 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 2 A
Max. Operating Junction Temperature (Tj): 140 °C
Transition Frequency (ft): 100 MHz
Collector Capacitance (Cc): 12 pF
Forward Current Transfer Ratio (hFE), MIN: 120
Noise Figure, dB: -
Package: TO92
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2SC4408 Datasheet (PDF)
2sc4409.pdf

2SC4409 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC4409 Power Amplifier Applications Unit: mm Power switching applications Low collector saturation voltage: VCE (sat) = 0.5V (max) (at I = 1A) C High speed switching time: t = 500ns (typ.) stg Small flat package P = 1~2 W (Mounted on ceramic substrate) C Complementary to 2SA1681 Ma
2sc4404.pdf

Ordering number:EN2757NPN Epitaxial Planar Silicon Transistor2SC4404UHF Local Oscillator,Wide-Band Amplifier ApplicationsApplications Package Dimensions UHF OSC, wide-band amplifiers. unit:mm2059BFeatures [2SC4404]0.3 High cutoff frequency : fT=5.0GHz typ0.15 High power gain : MAG=14dB typ (f=0.9GHz)3 Small noise figure : NF=2.2dB typ (f=0.9GHz)0~0.1
2sc4407.pdf

Ordering number:EN2760NPN Epitaxial Planar Silicon Transistor2SC4407VHF/UHF Mixer,Local Oscillator ApplicationsApplications Package Dimensions VHF/UHF mixers, frequency converters, localunit:mmoscillators.2059B[2SC4407]0.3Features0.15 High cutoff frequency : fT=3.0GHz typ3 High power gain : PG=12dB typ (f=0.9GHz)0~0.1 Small noise figure : NF=3.0dB
Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , TIP31 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
History: 2N5031 | 2SA982 | 2SA416 | 2SC3298A | DMJT9435 | 2N249 | GT115G
Keywords - 2SC4408 transistor datasheet
2SC4408 cross reference
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History: 2N5031 | 2SA982 | 2SA416 | 2SC3298A | DMJT9435 | 2N249 | GT115G



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