2SC4446 Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SC4446
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.2 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector Current |Ic max|: 0.15 A
Max. Operating Junction Temperature (Tj): 125 °C
Forward Current Transfer Ratio (hFE), MIN: 50
Noise Figure, dB: -
Package: TO236
2SC4446 Transistor Equivalent Substitute - Cross-Reference Search
2SC4446 Datasheet (PDF)
2sa1687 2sc4446.pdf
Ordering number:EN3013PNP/NPN Epitaxial Planar Silicon Transistors2SA1687/2SC4446Low-FrequencyGeneral-Purpose Amplifier ApplicationsFeatures Package Dimensions Very small-sized package permitting the 2SA1687/unit:mm2SC4446-applied sets to be made small and slim.2059 High VEBO.[2SA1687/2SC4446]B : BaseC : CollectorE : Emitter( ) : 2SA1687SANYO : MCPSpecifi
2sa1685 2sc4443.pdf
Ordering number:EN3200PNP/NPN Epitaxial Planar Silicon Transistors2SA1685/2SC4443High-Speed Switching ApplicationsFeatures Package Dimensions Fast switching speed.unit:mm High gain-bandwidth product.2059 Low saturation voltage.[2SA1685/2SC4443]B : BaseC : CollectorE : Emitter( ) : 2SA1685SANYO : MCPSpecificationsAbsolute Maximum Ratings at Ta = 25C
2sc4441.pdf
Ordering number:EN3794NPN Triple Diffused Planar Silicon Transistor2SC4441Ultrahigh-Definition Monocuro DisplayHorizontal Deflection Output ApplicationsFeatures Package Dimensions High reliability (Adoption of HVP process).unit:mm Fast switching speed.2041A High breakdown voltage.[2SC4441] Wide ASO. 4.510.02.8 Adoption of MBIT process.3.2 Mica
2sc4440.pdf
Ordering number:EN3793NPN Triple Diffused Planar Silicon Transistor2SC4440Ultrahigh-Definition Monochrome DisplayHorizontal Deflection Output ApplicationsFeatures Package Dimensions High reliability (Adoption of HVP process).unit:mm Fast switching speed.2041A High brocking voltage.[2SC4440] Wide ASO. 4.510.02.8 Adoption of MBIT process.3.2 Mic
2sc4449.pdf
Ordering number:EN3241NPN Triple Diffused Planar Silicon Transistor2SC4449TV Camera Deflection,High-Voltage Driver ApplicationsFeatures Package Dimensions High breakdown voltage.unit:mm Small reverse transfer capacitance and excellent high2003Bfrequency characteristic.[2SC4449] Excellent DC current gain.5.04.04.0 Adoption of FBET process.0.450.5
2sc4445.pdf
JMnic Product SpecificationSilicon NPN Power Transistors 2SC4445 DESCRIPTION With TO-3PML package High voltage. High speed switching APPLICATIONS For switching regulator and general purpose applications PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (TO-3PML) and symbol 3 EmitterAabsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDI
2sc4448.pdf
Product Specification www.jmnic.com Silicon Power Transistors 2SC4448 DESCRIPTION With TO-220F package High voltage ,high frequency APPLICATIONS Chroma output applications for HDTV Video output applications for high resolution display PINNING PIN DESCRIPTION1 Base 2 Collector3 emitterFig.1 simplified outline (TO-220F) and symbol Absolute maximum ratings(Ta=
2sc4445.pdf
2SC4445Silicon NPN Triple Diffused Planar Transistor (High Voltage and High Speed Switchihg Transistor) Application : Switching Regulator and General Purpose(Ta=25C) External Dimensions FM100(TO3PF) Absolute maximum ratings (Ta=25C) Electrical CharacteristicsSymbolSymbol 2SC4445 Unit Conditions 2SC4445 Unit0.20.2 5.515.60.23.45ICBOVCBO 900 V VCB=800V 100max
2sc4443.pdf
SMD Type TransistorsNPN Transistors2SC4443 Features Fast switching speed. High gain-bandwidth product. Low saturation voltage. Complementary to 2SA16851 Base2 Emitter3 Collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 40 Collector - Emitter Voltage VCEO 20 V Emitter - Base Voltage VEBO 5
2sc4445.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC4445DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 800V(Min)(BR)CEOHigh Switching SpeedWide Area of Safe Operation100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching regulator and general purposeapplicatio
2sc4448.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC4448DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 250V(Min)(BR)CEOHigh DC Current Gain100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSChroma output applications for HDTVVideo output applications for high resolution displayABSOLU
2sc4442.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC4442DESCRIPTION Collector-Base Breakdown Voltage-: V = 500V(Min.)(BR)CBOWide Area of Safe OperationHigh Speed Switching100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high speed switching applications.ABSOLUTE MAXIMUM RA
Datasheet: 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2N3906 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .