2SC4482 Datasheet and Replacement

Ordering number:ENN3235NPN Epitaxial Planar Silicon Transistor2SC4482High-Current Switching ApplicationsFeatures Package Dimensions Low saturation voltage.unit:mm Large current capacity.2064A High-speed switching.[2SC4482]2.51.456.9 1.00.60.9 0.51 2 30.451 : Emitter2 : Collector3 : Base2.54 2.54SANYO : NMPSpecificationsAbsolute Maximum Ra

Ordering number : EN3235A2SC4482Bipolar Transistorhttp://onsemi.com( )20V, 5A, Low VCE sat , NPN Single NMPFeatures Low saturation voltage Large current capacity High-speed switchingSpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitCollector-to-Base Voltage VCBO 60 VCollector-to-Emitter Voltage VCEO 20 VEmitter-to-Ba

Ordering number:ENN3096PNP/NPN Epitaxial Planar Silicon Transistors2SA1709/2SC4489High-Voltage Switching ApplicationsFeatures Package Dimensions Adoption of FBET, MBIT processes.unit:mm High breakdown voltage, large current capacity.2064A Fast switching speed.[2SA1709/2SC4489]2.51.456.9 1.00.60.9 0.51 2 30.451 : Base2 : Collector( ) 2SA17093 :

Ordering number:EN3025PNP/NPN Epitaxial Planar Silicon Transistors2SA1705/2SC4485Low-Frequency Power Amplifier ApplicationsApplications Package Dimensions Voltage regulators, relay drivers, lamp drivers. unit:mm2064Features [2SA1705/2SC4485] Adoption of FBET process. Fast switching speed.E : EmitterC : CollectorB : Base( ) : 2SA1705SANYO : NMPSpecification

Ordering number:EN3096PNP/NPN Epitaxial Planar Silicon Transistors2SA1709/2SC4489High-Voltage Switching ApplicationsFeatures Package Dimensions Adoption of FBET, MBIT processes.unit:mm High breakdown voltage, large current capacity.2064 Fast switching speed.[2SA1709/2SC4489]E : EmitterC : CollectorB : Base( ) 2SA1709SANYO : NMPSpecificationsAbsolute Ma

Ordering number : EN3094A2SA1708 / 2SC4488SANYO SemiconductorsDATA SHEETPNP / NPN Epitaxial Planar Silicon Transistors2SA1708 / 2SC4488High-Voltage Switching ApplicationsFeatures Adoption of FBET, MBIT processes. High breakdown voltage, large current capacity. Fast switching speed.Specifications ( ) : 2SA1708Absolute Maximum Ratings at Ta=25CParameter Symbol

Ordering number:EN3094PNP/NPN Epitaxial Planar Silicon Transistors2SA1708/2SC4488High-Voltage Switching ApplicationsFeatures Package Dimensions Adoption of FBET, MBIT processes.unit:mm High breakdown voltage, large current capacity.2064 Fast switching speed.[2SA1708/2SC4488]E : EmitterC : CollectorB : Base( ) : 2SA1708SANYO : NMPSpecificationsAbsolute

Ordering number:EN3026PNP/NPN Epitaxial Planar Silicon Transistors2SA1706/2SC4486High-Current Switching ApplicationsApplications Package Dimensions Voltage regulators, relay drivers, lamp drivers. unit:mm2064Features [2SA1706/2SC4486] Adoption of FBET, MBIT processes. Large current capacity and wide ASO. Fast switching speed.E : EmitterC : CollectorB : Base

Ordering number:EN3024PNP/NPN Epitaxial Planar Silicon Transistors2SA1704/2SC4484High-Current Driver ApplicationsApplications Package Dimensions Voltage regulators, relay drivers. lamp drivers. unit:mm2064Features [2SA1704/2SC4484] Adoption of FBET, MBIT processes. Low collector-to-emitter voltage. Large current capacity and wide ASO. Fast switching speed.

Ordering number:ENN3093PNP/NPN Epitaxial Planar Silicon Transistors2SA1707/2SC4487High-Current Switching ApplicationsFeatures Package Dimensions Adoption of FBET, MBIT processes.unit:mm Large current capacity, wide ASO.2064A Low collector-to-emitter saturation voltage.[2SA1707/2SC4487] Fast switching speed.2.51.456.9 1.00.60.9 0.51 2 30.451 : Em

Ordering number:EN3093PNP/NPN Epitaxial Planar Silicon Transistors2SA1707/2SC4487High-Current Switching ApplicationsFeatures Package Dimensions Adoption of FBET, MBIT processes.unit:mm Large current capacity, wide ASO.2064 Low collector-to-emitter saturation voltage.[2SA1707/2SC4487] Fast switching speed.E : EmitterC : CollectorB : Base( ) : 2SA1707SA

Ordering number:EN3234NPN Epitaxial Planar Silicon Transistor2SC4480Low-Frequency General-Purpose Amplifier,General Driver ApplicationsFeatures Package Dimensions Large current capacity.unit:mm Adoption of MBIT process.2064A High DC current gain.[2SC4480]2.5 Low collector-to-emitter saturation voltage.1.45 High VEBO.6.9 1.00.60.9 0.51 2 30.

Ordering number:EN3023PNP/NPN Epitaxial Planar Silicon Transistor2SA1703/2SC4483Low-Frequency Amplifier,Electronic Governor ApplicationsFeatures Package Dimensions Low collector-to-emitter saturation voltage.unit:mm2064[2SA1703/2SC4483]E : EmitterC : CollectorB : Base( ) : 2SA1703SANYO : NMPSpecificationsAbsolute Maximum Ratings at Ta = 25CParameter Symbol

Ordering number:EN3022PNP/NPN Epitaxial Planar Silicon Transistors2SA1701/2SC4481Low-FrequencyGeneral-Purpose Amplifier ApplicationsApplications Package Dimensions AF power amplifier, medium-speed switching, small-unit:mmsized motor driver applications.2064[2SA1701/2SC4481]Features Large current capacity. Low collector-to-emitter saturation voltage.E : Emitt

Ordering number : EN3094B2SA1708/2SC4488Bipolar Transistorhttp://onsemi.com( ) ( ) ( ) ( )- 100V, - 1A, Low VCE sat , PNP NPN Single NMPFeatures Adoption of FBET, MBIT processes High breakdown voltage, large current capacity Fast switching speed( )2SA1708SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitCollector-to-Ba

Ordering number : EN3093A2SA1707/2SC4487Bipolar Transistorhttp://onsemi.com(-)50V, (-)3A, Low VCE(sat), (PNP)NPN Single NMPFeatures Adoption of FBET, MBIT processes Large current capacity, wide ASO Low collector-to-emitter saturation voltage Fast switching speed( )2SA1707SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings

Ordering number : EN3096A2SA1709/2SC4489Bipolar Transistorhttp://onsemi.com(-)100V, (-)2A, Low VCE(sat), (PNP)NPN Single NMPFeatures Adoption of FBET, MBIT processes High breakdown voltage, large current capacity Fast switching speed( )2SA1709SpecificationsAbsolute Maximum Ratings at Ta=25CParameter Symbol Conditions Ratings UnitCollector-to-Base Voltage VC