2SC4497 Specs and Replacement

Type Designator: 2SC4497

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.9 W

Maximum Collector-Base Voltage |Vcb|: 300 V

Maximum Collector Current |Ic max|: 0.1 A

Max. Operating Junction Temperature (Tj): 125 °C

Electrical Characteristics

Transition Frequency (ft): 70 MHz

Forward Current Transfer Ratio (hFE), MIN: 350

Noise Figure, dB: -

Package: TO236

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2SC4497 datasheet

 ..1. Size:253K  toshiba

2sc4497.pdf pdf_icon

2SC4497

2SC4497 TOSHIBA Transistor Silicon NPN Triple Diffused Type (PCT process) 2SC4497 High Voltage Control Applications Unit mm High voltage VCBO = 300 V, VCEO = 300 V Low saturation voltage V = 0.5 V (max) CE (sat) Small collector output capacitance C = 3 pF (typ.) ob Complementary to 2SA1721 Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Ra... See More ⇒

 ..2. Size:971K  kexin

2sc4497.pdf pdf_icon

2SC4497

SMD Type Transistors NPN Transistors 2SC4497 SOT-23 Unit mm +0.1 2.9-0.1 +0.1 0.4 -0.1 3 Features Collector Current Capability IC=100mA Collector Emitter Voltage VCEO=300V 1 2 +0.1 0.95-0.1 Complement to 2SA1721 0.1+0.05 -0.01 1.9+0.1 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - B... See More ⇒

 8.1. Size:80K  sanyo

2sc4492.pdf pdf_icon

2SC4497

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 8.2. Size:148K  sanyo

2sa1710 2sc4490.pdf pdf_icon

2SC4497

Ordering number EN3097 PNP/NPN Epitaxial Planar Silicon Transistors 2SA1710/2SC4490 High-Definition CRT Display Video Output Applications Features Package Dimensions High breakdown voltage (VCEO 300V). unit mm Excellent high frequency characteristic. 2064 Adoption of MBIT process. [2SA1710/2SC4490] E Emitter C Collector B Base ( ) 2SA1710 SANYO NMP Spec... See More ⇒

Detailed specifications: 2SC449, 2SC4490, 2SC4491, 2SC4492, 2SC4493, 2SC4494, 2SC4495, 2SC4496, 8050, 2SC4498, 2SC4499, 2SC4499L, 2SC4499S, 2SC45, 2SC450, 2SC4500, 2SC4500L

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