2SC4499S Specs and Replacement
Type Designator: 2SC4499S
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 10 W
Maximum Collector-Base Voltage |Vcb|: 500 V
Maximum Collector-Emitter Voltage |Vce|: 400 V
Maximum Emitter-Base Voltage |Veb|: 10 V
Maximum Collector Current |Ic max|: 0.5 A
Max. Operating Junction Temperature (Tj): 125 °C
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 12
Package: DPAK
2SC4499S Substitution
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2SC4499S datasheet
2SC4499(L)/(S) Silicon NPN Triple Diffused Application High speed and high voltage switching Outline DPAK 4 4 1 2 1. Base 3 2. Collector 3. Emitter S Type 12 4. Collector 3 L Type 2SC4499(L)/(S) Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltage VCBO 500 V Collector to emitter voltage VCEO 400 V Emitter to base voltage VEBO 10 V Co... See More ⇒
2SC4497 TOSHIBA Transistor Silicon NPN Triple Diffused Type (PCT process) 2SC4497 High Voltage Control Applications Unit mm High voltage VCBO = 300 V, VCEO = 300 V Low saturation voltage V = 0.5 V (max) CE (sat) Small collector output capacitance C = 3 pF (typ.) ob Complementary to 2SA1721 Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Ra... See More ⇒
Ordering number EN3097 PNP/NPN Epitaxial Planar Silicon Transistors 2SA1710/2SC4490 High-Definition CRT Display Video Output Applications Features Package Dimensions High breakdown voltage (VCEO 300V). unit mm Excellent high frequency characteristic. 2064 Adoption of MBIT process. [2SA1710/2SC4490] E Emitter C Collector B Base ( ) 2SA1710 SANYO NMP Spec... See More ⇒
Detailed specifications: 2SC4493, 2SC4494, 2SC4495, 2SC4496, 2SC4497, 2SC4498, 2SC4499, 2SC4499L, 2SD313, 2SC45, 2SC450, 2SC4500, 2SC4500L, 2SC4500S, 2SC4501, 2SC4501L, 2SC4501S
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