2SC4521 PDF and Equivalents Search

 2sc4521.pdf

Ordering number EN3140A NPN Epitaxial Planar Silicon Transistors 2SC4521 High-Speed Switching Applications Features Package Dimensions Adoption of FBET, MBIT process. unit mm Large current capacity. 2038A Low collector-to-emitter saturation voltage. [2SC4521] Fast switching speed. 4.5 1.5 Small-sized package. 1.6 0.4 0.5 3 2 1 0.4 1.5 3.0 1 Base 0.75 ... See More ⇒

 2sc4521.pdf

SMD Type Transistors NPN Transistors 2SC4521 SOT-89 Unit mm 1.70 0.1 Features Collector Current Capability IC=3A Collector Emitter Voltage VCEO=45V 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 60 Collector - Emitter Voltage VCEO 45 V Emitter - Base Voltage VEBO... See More ⇒

 2sc4526.pdf

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 2sc4524.pdf

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 2sc4525.pdf

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 2sc4527.pdf

2SC4527 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC4527 TV Tuner, UHF Oscillator Applications (common base) Unit mm TV Tuner, UHF Converter Applications (common base) Transition frequency is high and dependent on current excellently. Exchange of emitter for base in 2SC4246. Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Collect... See More ⇒

 2sc4523.pdf

Ordering number EN3142A NPN Epitaxial Planar Silicon Transistors 2SC4523 High-Speed Switching Applications Features Package Dimensions Adoption of FBET, MBIT process. unit mm Large current capacity. 2045B Low collector-to-emitter saturation voltage. [2SC4522] Fast switching speed. 6.5 2.3 5.0 0.5 4 0.85 0.7 1.2 1 Base 0.6 0.5 2 Collector 3 Emitter ... See More ⇒

 2sc4522.pdf

Ordering number EN3141A NPN Epitaxial Planar Silicon Transistors 2SC4522 High-Speed Switching Applications Features Package Dimensions Adoption of FBET, MBIT process. unit mm Large current capacity. 2045B Low collector-to-emitter saturation voltage. [2SC4522] Fast switching speed. 6.5 2.3 5.0 0.5 4 0.85 0.7 1.2 1 Base 0.6 0.5 2 Collector 3 Emitter ... See More ⇒

 2sc4520.pdf

Ordering number EN3139 NPN Epitaxial Planar Silicon Transistors 2SC4520 High-Speed Switching Applications Features Package Dimensions Adoption of FBET, MBIT process. unit mm Large current capacity. 2038A Low collector-to-emitter saturation voltage. [2SC4520] Fast switching speed. 4.5 1.5 Small-sized package. 1.6 0.4 0.5 3 2 1 0.4 1.5 3.0 1 Base 0.75 2... See More ⇒

 2sc4529.pdf

2SC4529 Silicon NPN Epitaxial VHF Wide Band Amplifier Absolute Maximum Ratings (Ta = 25 C) TO-126 MOD Item Symbol Rating Unit Collector to base voltage VCBO 30 V Collector to emitter voltage VCEO 20 V ... See More ⇒