All Transistors. 2SC454 Datasheet

 

2SC454 Datasheet, Equivalent, Cross Reference Search

Type Designator: 2SC454

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 0.2 W

Maximum Collector-Base Voltage |Vcb|: 30 V

Maximum Collector-Emitter Voltage |Vce|: 30 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 0.1 A

Max. Operating Junction Temperature (Tj): 125 °C

Transition Frequency (ft): 115 MHz

Collector Capacitance (Cc): 4 pF

Forward Current Transfer Ratio (hFE), MIN: 60

Noise Figure, dB: -

Package: SOT33

2SC454 Transistor Equivalent Substitute - Cross-Reference Search

 

2SC454 Datasheet (PDF)

1.1. 2sc4548-d.pdf Size:80K _update

2SC454
2SC454

MCC 2SC4548-D TM Micro Commercial Components 20736 Marilla Street Chatsworth Micro Commercial Components 2SC4548-E CA 91311 Phone: (818) 701-4933 Fax: (818) 701-4939 Features • Small Flat Package NPN Epitaxial • Low collector-to-emitter saturation voltage. • Fast switching speed. Planar Silicon • Epoxy meets UL 94 V-0 flammability rating • Moisture Sensitivity Level

1.2. 2sc4548-e.pdf Size:80K _update

2SC454
2SC454

MCC 2SC4548-D TM Micro Commercial Components 20736 Marilla Street Chatsworth Micro Commercial Components 2SC4548-E CA 91311 Phone: (818) 701-4933 Fax: (818) 701-4939 Features • Small Flat Package NPN Epitaxial • Low collector-to-emitter saturation voltage. • Fast switching speed. Planar Silicon • Epoxy meets UL 94 V-0 flammability rating • Moisture Sensitivity Level

 1.3. 2sc4540.pdf Size:134K _toshiba

2SC454
2SC454

2SC4540 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC4540 Power Amplifier Applications Unit: mm Power Switching Applications • Low saturation voltage: VCE (sat) = 0.5 V (max) (I = 500 mA) C • High speed switching time: t = 0.4 µs (typ.) stg • Small flat package • PC = 1.0 to 2.0 W (mounted on ceramic substrate) • Complementary to 2SA1735 Ma

1.4. 2sc4544.pdf Size:220K _toshiba

2SC454
2SC454



 1.5. 2sc4541.pdf Size:170K _toshiba

2SC454
2SC454

2SC4541 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC4541 Power Amplifier Applications Unit: mm Power Switching Applications • Low saturation voltage: VCE (sat) = 0.5 V (max) (I C = 1.5 A) • High speed switching time: t = 0.5 µs (typ.) stg • Small flat package • PC = 1.0 to 2.0 W (mounted on ceramic substrate) • Complementary to 2SA1736 Max

1.6. 2sc4547.pdf Size:84K _sanyo

2SC454
2SC454

Ordering number:EN3712 NPN Planar Silicon Darlington Transistor 2SC4547 85V/3A Driver Applications Applications Package Dimensions Suitable for use in switching of L load (motor unit:mm drivers, printer hammer drivers, relay drivers). 2010C [2SC4169] 10.2 4.5 Features 3.6 5.1 1.3 High DC current gain. Large current capacity and Wide ASO. Contains Zener diode of 95 10

1.7. 2sc4548.pdf Size:109K _sanyo

2SC454
2SC454

Ordering number:EN3188 PNP Epitaxial Planar Silicon Transistor NPN Triple Diffuesd Planar Silicon Transistor 2SA1740/2SC4548 High-Voltage Driver Applications Features Package Dimensions High breakdown votlage. unit:mm Adoption of MBIT process. 2038 Excellent hFE linearlity. [2SA1740/2SC4548] E : Emitter C : Collector B : Base ( ) : 2SA1740 SANYO : PCP (Bottom view) Speci

1.8. 2sc4543.pdf Size:36K _panasonic

2SC454
2SC454

Transistor 2SC4543 Silicon NPN epitaxial planer type For video amplifier Unit: mm 1.5 0.1 4.5 0.1 1.6 0.2 Features High transition frequency fT. Small collector output capacitance Cob. 45 Wide current range. 0.4 0.08 0.4 0.04 0.5 0.08 1.5 0.1 Absolute Maximum Ratings (Ta=25?C) 3.0 0.15 Parameter Symbol Ratings Unit 3 2 1 Collector to base voltage VCBO 110 V Collector

1.9. 2sc4545.pdf Size:81K _panasonic

2SC454
2SC454

Power Transistors 2SC4545 Silicon NPN epitaxial planar type For medium output power amplification Unit: mm 7.50.2 4.50.2 Features Allowing supply with the radial taping 0.650.1 0.850.1 0.8 C 0.8 C 1.00.1 0.70.1 0.70.1 Absolute Maximum Ratings Ta = 25C 1.150.2 1.150.2 Parameter Symbol Rating Unit Collector-base voltage (Emitter open) VCBO 50 V 0.50.1 0.40.1 Coll

1.10. 2sc4543 e.pdf Size:40K _panasonic

2SC454
2SC454

Transistor 2SC4543 Silicon NPN epitaxial planer type For video amplifier Unit: mm 1.5 0.1 4.5 0.1 1.6 0.2 Features High transition frequency fT. Small collector output capacitance Cob. 45 Wide current range. 0.4 0.08 0.4 0.04 0.5 0.08 1.5 0.1 Absolute Maximum Ratings (Ta=25?C) 3.0 0.15 Parameter Symbol Ratings Unit 3 2 1 Collector to base voltage VCBO 110 V Collector

1.11. 2sc4548.pdf Size:205K _utc

2SC454
2SC454

UNISONIC TECHNOLOGIES CO., LTD 2SC4548 NPN SILICON TRANSISTOR HIGH VOLTAGE DRIVER APPLICATION FEATURES *High breakdown voltage. *Excellent hFE linearity. ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3 2SC4548L-x-AB3-R 2SC4548G-x-AB3-R SOT-89 B C E Tape Reel Note: Pin Assignment: E: EMITTER C: COLLECTOR B: BASE www.uniso

1.12. 2sc454.pdf Size:35K _hitachi

2SC454
2SC454

2SC454 Silicon NPN Epitaxial Application High frequency amplifier, mixer Outline TO-92 (2) 1. Emitter 2. Collector 3. Base 3 2 1 2SC454 Absolute Maximum Ratings (Ta = 25C) Item Symbol Ratings Unit Collector to base voltage VCBO 30 V Collector to emitter voltage VCEO 30 V Emitter to base voltage VEBO 5V Collector current IC 100 mA Collector power dissipation PC 200 mW Junction

1.13. 2sc4542.pdf Size:132K _no

2SC454
2SC454

1.14. 2sc4548.pdf Size:71K _secos

2SC454

2SC4548 0.2A , 400V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-89 FEATURES 4 Small Flat Package High Breakdown Voltage 1 2 Excellent hFE Linearity 3 B C A E E C CLASSIFICATION OF hFE B D Product-Rank 2SC4548-D 2SC4548-E F G H K Range 60~120 100~200 J L Mark

1.15. 2sc4546.pdf Size:24K _sanken-ele

2SC454

2SC4546 Silicon NPN Triple Diffused Planar Transistor (High Voltage and Ultra-high Speed Switchihg Transistor) Application : Switching Regulator, Lighting Inverter and General Purpose Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C) External Dimensions FM20(TO220F) Symbol 2SC4546 Unit Symbol Conditions 2SC4546 Unit 0.2 4.2 0.2 10.1 c0.5 2.8 VCBO 600 V ICBO VCB=

1.16. 2sc4546.pdf Size:255K _inchange_semiconductor

2SC454
2SC454

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC4546 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V(Min) ·High Switching Speed APPLICATIONS ·Designed for switching regulator, lighting inverter and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60

1.17. 2sc4542.pdf Size:229K _inchange_semiconductor

2SC454
2SC454

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC4542 DESCRIPTION ·High Breakdown Voltage- : VCBO= 1500V (Min) ·High Switching Speed APPLICATIONS ·Horizontal deflection output for high resolution display. ·High speed switching regulator output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base

1.18. 2sc4549.pdf Size:240K _inchange_semiconductor

2SC454
2SC454

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC4549 DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 60V(Min) ·High DC Current Gain- : hFE= 100(Min)@ (VCE= 2V , IC= 1A) ·Low Saturation Voltage- : VCE(sat)= 0.3V(Max)@ (IC= 3A, IBB= 0.15A) APPLICATIONS ·Designed for use as a driver in DC/DC converters and actuators. ABS

1.19. 2sc4544.pdf Size:219K _inchange_semiconductor

2SC454
2SC454

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC4544 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 300V(Min) ·Small Collector Ouptut Capacitance APPLICATIONS ·High voltage switching and amplifier applications. ·Color TV horizontal driver applications. ·Color TV chroma output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?)

1.20. 2sc4548.pdf Size:334K _htsemi

2SC454

2SC4548 SOT-89-3L TRANSISTOR(NPN) 1. BASE FEATURES 2. COLLECTOR Small Flat Package High Breakdown Voltage 3. EMITTER Excellent hFE Linearity MAXIMUM RATINGS (Ta=25? unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 400 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 5 V IC Collector Current 200 mA PC Collector Power Di

1.21. 2sc4544.pdf Size:228K _lge

2SC454
2SC454

2SC4544(NPN) TO-220 Transistor TO-220 1. BASE 2. COLLECTOR 3. EMITTER 3 2 1 Features High voltage: V (BR) CEO = 300 V Small collector output capacitance: Cob = 3.0 pF (typ.) Collector metal (fin) is fully covered with mold resin. MAXIMUM RATINGS (TA=25? unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 300 V Dimensions in inches and (mi

1.22. 2sc4548.pdf Size:375K _wietron

2SC454
2SC454

2SC4548 NPN EPITAXIAL PLANAR TRANSISTOR P b Lead(Pb)-Free 1. BASE 2. COLLECTOR 3. EMITTER 1 2 3 SOT-89 ABSOLUTE MAXIMUM RATINGS(TA=25?C Unless Otherwise Noted) Rating Symbol Value Unit VCBO 400 V Collector to Base Voltage VCEO 400 V Collector to Emitter Voltage V VEBO 5 Emitter to Base Voltage IC Collector Current (DC) 200 mA PD 500 mW Total Device Disspation TA=25°C Jun

1.23. st2sc4541u.pdf Size:638K _semtech

2SC454
2SC454

ST 2SC4541U NPN Silicon Epitaxial Planar Transistor for power switching and power amplifier applications Absolute Maximum Ratings (Ta = 25℃) Parameter Symbol Value Unit Collector Base Voltage VCBO 80 V Collector Emitter Voltage VCEO 50 V Emitter Base Voltage VEBO 6 V Collector Current IC 3 A Current IB 0.6 A Base 0.5 Ptot W Total Power Dissipation 1 1) Junction Te

1.24. 2sc4540.pdf Size:755K _kexin

2SC454
2SC454

SMD Type Transistors NPN Transistors 2SC4540 1.70 0.1 ■ Features ● Low saturation voltage ● High speed switching time ● Small flat package 0.42 0.1 0.46 0.1 ● PC = 1.0 to 2.0 W (mounted on ceramic substrate) ● Complementary to 2SA1735 1.Base 2.Collector 3.Emitter ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO

1.25. 2sc4543.pdf Size:907K _kexin

2SC454
2SC454

SMD Type Transistors NPN Transistors 2SC4543 SOT-89 Unit:mm 1.70 0.1 ■ Features ● Collector Current Capability IC=0.15A ● Collector Emitter Voltage VCEO=50V 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO 110 Collector - Emitter voltage VCER 100 REB = 1.2KΩ V Collect

1.26. 2sc4548.pdf Size:1140K _kexin

2SC454
2SC454

SMD Type Transistors NPN Transistors 2SC4548 SOT-89 Unit:mm 1.70 0.1 ■ Features ● Collector Current Capability IC=0.2A ● Collector Emitter Voltage VCEO=400V ● Complementary to 2SA1740 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO 400 Collector - Emitter Voltage VCEO

1.27. 2sc4541.pdf Size:1183K _kexin

2SC454
2SC454

SMD Type Transistors NPN Transistors 2SC4541 1.70 0.1 ■ Features ● Low saturation voltage ● High speed switching time ● Small flat package 0.42 0.1 0.46 0.1 ● PC = 1.0 to 2.0 W (mounted on ceramic substrate) ● Complementary to 2SA1736 1.Base 2.Collector 3.Emitter ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO

Datasheet: 2SC4323 , 2SC4324 , 2SC4325 , 2SC4326 , 2SC4327 , 2SC4328 , 2SC4329 , 2SC433 , BC237 , 2SC4331 , 2SC4332 , 2SC4333 , 2SC4334 , 2SC4335 , 2SC4336 , 2SC4337 , 2SC4338 .

 
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