All Transistors. 2SC2785EF Datasheet

 

2SC2785EF Datasheet, Equivalent, Cross Reference Search


   Type Designator: 2SC2785EF
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.25 W
   Maximum Collector-Base Voltage |Vcb|: 60 V
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 150 MHz
   Collector Capacitance (Cc): 3 pF
   Forward Current Transfer Ratio (hFE), MIN: 250
   Noise Figure, dB: -
   Package: SPAK

 2SC2785EF Transistor Equivalent Substitute - Cross-Reference Search

   

2SC2785EF Datasheet (PDF)

 7.1. Size:281K  nec
2sc2785.pdf

2SC2785EF
2SC2785EF

 7.2. Size:494K  lge
2sc2785.pdf

2SC2785EF
2SC2785EF

2SC2785 TO-92S Transistor (NPN) 1. EMITTER TO-92S 2. COLLECTOR 3. BASE 1 2 3 Features High voltage VCEO:50V Excellent hFE Linearity:0.92 TYP hFE1 (0.1mA)/ hFE2 (1mA) Complementary to 2SA1175 PNP transistor MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Value UnitsParameter VCBO 60 VCollector-Base Voltage VCEO Collector-Emitter Voltage 50 V VEBO

 8.1. Size:137K  toshiba
2sc2782.pdf

2SC2785EF
2SC2785EF

2SC2782 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2782 VHF BAND POWER AMPLIFIER APPLICATIONS Unit in mm Output Power : Po = 80W (Min.) (f = 175MHz, VCC = 12.5V, Pi = 18W) MAXIMUM RATINGS (Tc = 25C) CHARACTERISTIC SYMBOL RATING UNITCollector-Base Voltage VCBO 36 VCollector-Emitter Voltage VCEO 16 VEmitter-Base Voltage VEBO 4 VCollector Current IC 20 A

 8.2. Size:117K  toshiba
2sc2783.pdf

2SC2785EF
2SC2785EF

 8.3. Size:209K  nec
2sc2780.pdf

2SC2785EF
2SC2785EF

 8.4. Size:185K  nec
2sc2784.pdf

2SC2785EF
2SC2785EF

 8.5. Size:286K  nec
2sc2786.pdf

2SC2785EF
2SC2785EF

 8.6. Size:228K  nec
2sc2787.pdf

2SC2785EF
2SC2785EF

 8.7. Size:1171K  kexin
2sc2780.pdf

2SC2785EF
2SC2785EF

SMD Type TransistorsNPN Transistors2SC2780SOT-89Unit:mm1.70 0.1 Features Collector Current Capability IC=50mA Collector Emitter Voltage VCEO=140V Complementary to 2SA11730.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 140 Collector - Emitter Voltage VCEO

 8.8. Size:200K  inchange semiconductor
2sc2788.pdf

2SC2785EF
2SC2785EF

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC2788DESCRIPTIONLow Collector Saturation VoltageCollector-Emitter Breakdown VoltageGood Linearity of hFE100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching regulators applicationsABSOLUTE MAXIMUM RATINGS(T =25)aS

Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D209L , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .

 

 
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