2SC4585 Specs and Replacement
Type Designator: 2SC4585
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 85 W
Maximum Collector-Base Voltage |Vcb|: 1200 V
Maximum Collector-Emitter Voltage |Vce|: 800 V
Maximum Emitter-Base Voltage |Veb|: 7 V
Maximum Collector Current |Ic max|: 10 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 8 MHz
Forward Current Transfer Ratio (hFE), MIN: 8
Noise Figure, dB: -
Package: TO3PFM
- BJT ⓘ Cross-Reference Search
2SC4585 datasheet
..1. Size:437K shindengen
2sc4585.pdf 
SHINDENGEN Switching Power Transistor HFX Series OUTLINE DIMENSIONS 2SC4585 Case ITO-3P Unit mm (TP10W80HFX) 10A NPN RATINGS Absolute Maximum Ratings Item Symbol Conditions Ratings Unit Storage Temperature Tstg -55 150 Junction Temperature Tj 150 Collector to Base Voltage VCBO 1200 V Collector to Emitter Voltage VCEO 800 V Emitter to Base Voltage VEBO 7V Colle... See More ⇒
..2. Size:190K inchange semiconductor
2sc4585.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4585 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 800V(Min) CEO(SUS) Fast Switching speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power switching applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETE... See More ⇒
8.2. Size:41K hitachi
2sc2310 2sc458.pdf
2SC458 (LG), 2SC2310 Silicon NPN Epitaxial Application Low frequency low noise amplifier Complementary pair with 2SA1031 and 2SA1032 Outline TO-92 (1) 1. Emitter 2. Collector 3. Base 3 2 1 2SC458 (LG), 2SC2310 Absolute Maximum Ratings (Ta = 25 C) Item Symbol 2SC458 (LG) 2SC2310 Unit Collector to base voltage VCBO 30 55 V Collector to emitter voltage VCEO 30 50 V Emit... See More ⇒
8.3. Size:27K hitachi
2sc458 2sc2308.pdf
2SC458, 2SC2308 Silicon NPN Epitaxial Application Low frequency amplifier Complementary pair with 2SA1029 and 2SA1030 Outline TO-92 (1) 1. Emitter 2. Collector 3. Base 3 2 1 2SC458, 2SC2308 Absolute Maximum Ratings (Ta = 25 C) Item Symbol 2SC458 2SC2308 Unit Collector to base voltage VCBO 30 55 V Collector to emitter voltage VCEO 30 50 V Emitter to base voltage VEBO ... See More ⇒
8.4. Size:432K shindengen
2sc4580.pdf
SHINDENGEN Switching Power Transistor FX Series OUTLINE DIMENSIONS 2SC4580 Case ITO-3P Unit mm (TP8W45FX) 8A NPN RATINGS Absolute Maximum Ratings Item Symbol Conditions Ratings Unit Storage Temperature Tstg -55 150 Junction Temperature Tj 150 Collector to Base Voltage VCBO 600 V Collector to Emitter Voltage VCEO 450 V VCEX VEB = 5V 600 Emitter to Base Voltage ... See More ⇒
8.5. Size:438K shindengen
2sc4583.pdf
SHINDENGEN Switching Power Transistor HFX Series OUTLINE DIMENSIONS 2SC4583 Case ITO-3P Unit mm (TP3W80HFX) 3A NPN RATINGS Absolute Maximum Ratings Item Symbol Conditions Ratings Unit Storage Temperature Tstg -55 150 Junction Temperature Tj 150 Collector to Base Voltage VCBO 1200 V Collector to Emitter Voltage VCEO 800 V Emitter to Base Voltage VEBO 7V Collect... See More ⇒
8.6. Size:443K shindengen
2sc4581.pdf
SHINDENGEN Switching Power Transistor FX Series OUTLINE DIMENSIONS 2SC4581 Case ITO-3P Unit mm (TP10W45FX) 10A NPN RATINGS Absolute Maximum Ratings Item Symbol Conditions Ratings Unit Storage Temperature Tstg -55 150 Junction Temperature Tj 150 Collector to Base Voltage VCBO 600 V Collector to Emitter Voltage VCEO 450 V VCEX VEB = 5V 600 Emitter to Base Voltag... See More ⇒
8.7. Size:446K shindengen
2sc4582.pdf
SHINDENGEN Switching Power Transistor FX Series OUTLINE DIMENSIONS 2SC4582 Case ITO-3P Unit mm (TP15W45FX) 15A NPN RATINGS Absolute Maximum Ratings Item Symbol Conditions Ratings Unit Storage Temperature Tstg -55 150 Junction Temperature Tj 150 Collector to Base Voltage VCBO 600 V Collector to Emitter Voltage VCEO 450 V VCEX VEB = 5V 600 Emitter to Base Voltag... See More ⇒
8.8. Size:441K shindengen
2sc4584.pdf
SHINDENGEN Switching Power Transistor HFX Series OUTLINE DIMENSIONS 2SC4584 Case ITO-3P Unit mm (TP6W80HFX) 6A NPN RATINGS Absolute Maximum Ratings Item Symbol Conditions Ratings Unit Storage Temperature Tstg -55 150 Junction Temperature Tj 150 Collector to Base Voltage VCBO 1200 V Collector to Emitter Voltage VCEO 800 V Emitter to Base Voltage VEBO 7V Collect... See More ⇒
8.9. Size:191K inchange semiconductor
2sc4580.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4580 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 450V(Min) CEO(SUS) Fast Switching speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power switching applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETE... See More ⇒
8.10. Size:192K inchange semiconductor
2sc4583.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4583 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 800V(Min) CEO(SUS) Fast Switching speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power switching applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETE... See More ⇒
8.11. Size:188K inchange semiconductor
2sc4589.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4589 DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO High Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for CTV/character display horizontal deflection output stage applications ABSOLUTE MAXIMUM RATINGS(Ta=25... See More ⇒
8.12. Size:191K inchange semiconductor
2sc4581.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC4581 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 450V(Min) CEO(SUS) Fast Switching speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power switching applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETE... See More ⇒
8.13. Size:222K inchange semiconductor
2sc4582.pdf
isc Silicon NPN Power Transistor 2SC4582 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 450V(Min) CEO(SUS) Fast Switching speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power switching applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 600 V CBO... See More ⇒
8.14. Size:91K inchange semiconductor
2sc4584.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4584 DESCRIPTION With TO-3PML package High voltage,high speed Switching power transistor PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-3PML) and symbol 3 Emitter Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltag... See More ⇒
Detailed specifications: 2SC4578
, 2SC4579
, 2SC458
, 2SC4580
, 2SC4581
, 2SC4582
, 2SC4583
, 2SC4584
, TIP42C
, 2SC4589
, 2SC458B
, 2SC458C
, 2SC458D
, 2SC459
, 2SC4596
, 2SC4597
, 2SC4598
.
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