All Transistors. 2SC458D Datasheet

 

2SC458D Datasheet, Equivalent, Cross Reference Search


   Type Designator: 2SC458D
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.2 W
   Maximum Collector-Base Voltage |Vcb|: 30 V
   Maximum Collector-Emitter Voltage |Vce|: 30 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 230(typ) MHz
   Collector Capacitance (Cc): 1.8 pF
   Forward Current Transfer Ratio (hFE), MIN: 250
   Noise Figure, dB: -
   Package: TO92

 2SC458D Transistor Equivalent Substitute - Cross-Reference Search

   

2SC458D Datasheet (PDF)

 8.1. Size:376K  hitachi
2sc4589.pdf

2SC458D 2SC458D

 8.2. Size:41K  hitachi
2sc2310 2sc458.pdf

2SC458D 2SC458D

2SC458 (LG), 2SC2310Silicon NPN EpitaxialApplication Low frequency low noise amplifier Complementary pair with 2SA1031 and 2SA1032OutlineTO-92 (1)1. Emitter2. Collector3. Base3212SC458 (LG), 2SC2310Absolute Maximum Ratings (Ta = 25C)Item Symbol 2SC458 (LG) 2SC2310 UnitCollector to base voltage VCBO 30 55 VCollector to emitter voltage VCEO 30 50 VEmit

 8.3. Size:27K  hitachi
2sc458 2sc2308.pdf

2SC458D 2SC458D

2SC458, 2SC2308Silicon NPN EpitaxialApplication Low frequency amplifier Complementary pair with 2SA1029 and 2SA1030OutlineTO-92 (1)1. Emitter2. Collector3. Base3212SC458, 2SC2308Absolute Maximum Ratings (Ta = 25C)Item Symbol 2SC458 2SC2308 UnitCollector to base voltage VCBO 30 55 VCollector to emitter voltage VCEO 30 50 VEmitter to base voltage VEBO

 8.4. Size:432K  shindengen
2sc4580.pdf

2SC458D 2SC458D

SHINDENGENSwitching Power TransistorFX SeriesOUTLINE DIMENSIONS2SC4580 Case : ITO-3P Unit : mm(TP8W45FX)8A NPNRATINGSAbsolute Maximum Ratings Item Symbol Conditions Ratings UnitStorage Temperature Tstg -55150 Junction Temperature Tj 150 Collector to Base Voltage VCBO 600 VCollector to Emitter Voltage VCEO 450 VVCEX VEB = 5V 600Emitter to Base Voltage

 8.5. Size:438K  shindengen
2sc4583.pdf

2SC458D 2SC458D

SHINDENGENSwitching Power TransistorHFX SeriesOUTLINE DIMENSIONS2SC4583 Case : ITO-3P Unit : mm(TP3W80HFX)3A NPNRATINGSAbsolute Maximum Ratings Item Symbol Conditions Ratings UnitStorage Temperature Tstg -55150 Junction Temperature Tj 150 Collector to Base Voltage VCBO 1200 VCollector to Emitter Voltage VCEO 800 VEmitter to Base Voltage VEBO 7VCollect

 8.6. Size:443K  shindengen
2sc4581.pdf

2SC458D 2SC458D

SHINDENGENSwitching Power TransistorFX SeriesOUTLINE DIMENSIONS2SC4581 Case : ITO-3P Unit : mm(TP10W45FX)10A NPNRATINGSAbsolute Maximum Ratings Item Symbol Conditions Ratings UnitStorage Temperature Tstg -55150 Junction Temperature Tj 150 Collector to Base Voltage VCBO 600 VCollector to Emitter Voltage VCEO 450 VVCEX VEB = 5V 600Emitter to Base Voltag

 8.7. Size:446K  shindengen
2sc4582.pdf

2SC458D 2SC458D

SHINDENGENSwitching Power TransistorFX SeriesOUTLINE DIMENSIONS2SC4582 Case : ITO-3P Unit : mm(TP15W45FX)15A NPNRATINGSAbsolute Maximum Ratings Item Symbol Conditions Ratings UnitStorage Temperature Tstg -55150 Junction Temperature Tj 150 Collector to Base Voltage VCBO 600 VCollector to Emitter Voltage VCEO 450 VVCEX VEB = 5V 600Emitter to Base Voltag

 8.8. Size:441K  shindengen
2sc4584.pdf

2SC458D 2SC458D

SHINDENGENSwitching Power TransistorHFX SeriesOUTLINE DIMENSIONS2SC4584 Case : ITO-3P Unit : mm(TP6W80HFX)6A NPNRATINGSAbsolute Maximum Ratings Item Symbol Conditions Ratings UnitStorage Temperature Tstg -55150 Junction Temperature Tj 150 Collector to Base Voltage VCBO 1200 VCollector to Emitter Voltage VCEO 800 VEmitter to Base Voltage VEBO 7VCollect

 8.9. Size:437K  shindengen
2sc4585.pdf

2SC458D 2SC458D

SHINDENGENSwitching Power TransistorHFX SeriesOUTLINE DIMENSIONS2SC4585 Case : ITO-3P Unit : mm(TP10W80HFX)10A NPNRATINGSAbsolute Maximum Ratings Item Symbol Conditions Ratings UnitStorage Temperature Tstg -55150 Junction Temperature Tj 150 Collector to Base Voltage VCBO 1200 VCollector to Emitter Voltage VCEO 800 VEmitter to Base Voltage VEBO 7VColle

 8.10. Size:191K  inchange semiconductor
2sc4580.pdf

2SC458D 2SC458D

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC4580DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 450V(Min)CEO(SUS)Fast Switching speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power switching applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETE

 8.11. Size:192K  inchange semiconductor
2sc4583.pdf

2SC458D 2SC458D

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC4583DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 800V(Min)CEO(SUS)Fast Switching speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power switching applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETE

 8.12. Size:188K  inchange semiconductor
2sc4589.pdf

2SC458D 2SC458D

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC4589DESCRIPTIONHigh Breakdown Voltage-: V = 1500V (Min)CBOHigh Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for CTV/character display horizontal deflectionoutput stage applicationsABSOLUTE MAXIMUM RATINGS(Ta=25

 8.13. Size:191K  inchange semiconductor
2sc4581.pdf

2SC458D 2SC458D

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC4581DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 450V(Min)CEO(SUS)Fast Switching speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power switching applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETE

 8.14. Size:222K  inchange semiconductor
2sc4582.pdf

2SC458D 2SC458D

isc Silicon NPN Power Transistor 2SC4582DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 450V(Min)CEO(SUS)Fast Switching speedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power switching applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 600 VCBO

 8.15. Size:91K  inchange semiconductor
2sc4584.pdf

2SC458D 2SC458D

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4584 DESCRIPTION With TO-3PML package High voltage,high speed Switching power transistor PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (TO-3PML) and symbol 3 EmitterAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNITVCBO Collector-base voltag

 8.16. Size:190K  inchange semiconductor
2sc4585.pdf

2SC458D 2SC458D

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC4585DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 800V(Min)CEO(SUS)Fast Switching speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for power switching applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETE

Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D209L , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .

History: 2SC464 | 2N5224

 

 
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