All Transistors. 2SC4666A Datasheet

 

2SC4666A Datasheet, Equivalent, Cross Reference Search


   Type Designator: 2SC4666A
   SMD Transistor Code: PA
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.1 W
   Maximum Collector-Base Voltage |Vcb|: 50 V
   Maximum Collector Current |Ic max|: 0.15 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 250 MHz
   Forward Current Transfer Ratio (hFE), MIN: 600
   Noise Figure, dB: -
   Package: SOT323

 2SC4666A Transistor Equivalent Substitute - Cross-Reference Search

   

2SC4666A Datasheet (PDF)

 7.1. Size:261K  toshiba
2sc4666.pdf

2SC4666A
2SC4666A

2SC4666 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC4666 Audio Frequency Amplifier Applications Unit: mm Switching Applications High hFE: h = 600~3600 FE High voltage: V = 50 V CEO High collector current: I = 150 mA (max) C Small package Maximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-base voltage V

 8.1. Size:246K  toshiba
2sc4667.pdf

2SC4666A
2SC4666A

2SC4667 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC4667 Ultra High Speed Switching Applications Unit: mm Computer, Counter Applications High transition frequency: fT = 400 MHz (typ.) Low saturation voltage: V = 0.3 V (max) CE (sat) High speed switching time: t = 15 ns (typ.) stgMaximum Ratings (Ta == 25C) ==Characteristics Symbol R

 8.2. Size:94K  sanyo
2sc4660.pdf

2SC4666A
2SC4666A

Ordering number:EN4692NPN Epitaxial Planar Silicon Transistor2SC4660High-Definition CRT DisplayVideo Output Driver ApplicationsFeatures Package Dimensions High fT (fT=2.2GHz typ)unit:mm Large current (IC=300mA)2042B Adoption of FBET process.[2SC4660]8.04.03.31.0 1.03.01.60.80.80.75 0.71 : Emitter2 : Collector3 : Base2.44.8SANYO : TO-1

 8.3. Size:98K  jmnic
2sc4663.pdf

2SC4666A
2SC4666A

Product Specification www.jmnic.com Silicon NPN Power Transistors 2SC4663 DESCRIPTION With ITO-220 package Switching power transistor PINNING PIN DESCRIPTION1 Base 2 Collector3 EmitterFig.1 simplified outline (ITO-220) and symbol Absolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNITVCBO Collector-base voltage Open emitter 250 V VCEO Collector-

 8.4. Size:101K  jmnic
2sc4664.pdf

2SC4666A
2SC4666A

Product Specification www.jmnic.com Silicon NPN Power Transistors 2SC4664 DESCRIPTION With ITO-220 package Switching power transistor PINNING PIN DESCRIPTION1 Base 2 Collector3 EmitterFig.1 simplified outline (ITO-220) and symbol Absolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNITVCBO Collector-base voltage Open emitter 250 V VCEO Collector-

 8.5. Size:24K  sanken-ele
2sc4662.pdf

2SC4666A

2SC4662Silicon NPN Triple Diffused Planar Transistor (High Voltage and High Speed Switchihg Transistor)Application : Switching Regulator and General Purpose Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C) External Dimensions FM20(TO220F)Symbol 2SC4662 Unit Symbol Conditions 2SC4662 Unit0.24.20.210.1c0.52.8VCBO 500 V ICBO VCB=500V 100max A

 8.6. Size:116K  inchange semiconductor
2sc4663.pdf

2SC4666A
2SC4666A

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4663 DESCRIPTION With ITO-220 package Switching power transistor Low collector saturation voltage PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (ITO-220) and symbol 3 EmitterAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNITVCBO Collector-bas

 8.7. Size:116K  inchange semiconductor
2sc4664.pdf

2SC4666A
2SC4666A

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4664 DESCRIPTION With ITO-220 package Switching power transistor Low collector saturation voltage PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (ITO-220) and symbol 3 EmitterAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNITVCBO Collector-bas

 8.8. Size:182K  inchange semiconductor
2sc4662.pdf

2SC4666A
2SC4666A

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC4662DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 400V(Min)(BR)CEOHigh Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching regulator and general purposeapplications.ABSOLUTE MAXIMUM RATINGS(T =25

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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