2SC4666B Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SC4666B
SMD Transistor Code: PB
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.1 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector Current |Ic max|: 0.15 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 250 MHz
Forward Current Transfer Ratio (hFE), MIN: 1200
Noise Figure, dB: -
Package: SOT323
2SC4666B Transistor Equivalent Substitute - Cross-Reference Search
2SC4666B Datasheet (PDF)
2sc4666.pdf
2SC4666 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC4666 Audio Frequency Amplifier Applications Unit: mm Switching Applications High hFE: h = 600~3600 FE High voltage: V = 50 V CEO High collector current: I = 150 mA (max) C Small package Maximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-base voltage V
2sc4667.pdf
2SC4667 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC4667 Ultra High Speed Switching Applications Unit: mm Computer, Counter Applications High transition frequency: fT = 400 MHz (typ.) Low saturation voltage: V = 0.3 V (max) CE (sat) High speed switching time: t = 15 ns (typ.) stgMaximum Ratings (Ta == 25C) ==Characteristics Symbol R
2sc4660.pdf
Ordering number:EN4692NPN Epitaxial Planar Silicon Transistor2SC4660High-Definition CRT DisplayVideo Output Driver ApplicationsFeatures Package Dimensions High fT (fT=2.2GHz typ)unit:mm Large current (IC=300mA)2042B Adoption of FBET process.[2SC4660]8.04.03.31.0 1.03.01.60.80.80.75 0.71 : Emitter2 : Collector3 : Base2.44.8SANYO : TO-1
2sc4663.pdf
Product Specification www.jmnic.com Silicon NPN Power Transistors 2SC4663 DESCRIPTION With ITO-220 package Switching power transistor PINNING PIN DESCRIPTION1 Base 2 Collector3 EmitterFig.1 simplified outline (ITO-220) and symbol Absolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNITVCBO Collector-base voltage Open emitter 250 V VCEO Collector-
2sc4664.pdf
Product Specification www.jmnic.com Silicon NPN Power Transistors 2SC4664 DESCRIPTION With ITO-220 package Switching power transistor PINNING PIN DESCRIPTION1 Base 2 Collector3 EmitterFig.1 simplified outline (ITO-220) and symbol Absolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNITVCBO Collector-base voltage Open emitter 250 V VCEO Collector-
2sc4662.pdf
2SC4662Silicon NPN Triple Diffused Planar Transistor (High Voltage and High Speed Switchihg Transistor)Application : Switching Regulator and General Purpose Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C) External Dimensions FM20(TO220F)Symbol 2SC4662 Unit Symbol Conditions 2SC4662 Unit0.24.20.210.1c0.52.8VCBO 500 V ICBO VCB=500V 100max A
2sc4663.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4663 DESCRIPTION With ITO-220 package Switching power transistor Low collector saturation voltage PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (ITO-220) and symbol 3 EmitterAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNITVCBO Collector-bas
2sc4664.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4664 DESCRIPTION With ITO-220 package Switching power transistor Low collector saturation voltage PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (ITO-220) and symbol 3 EmitterAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNITVCBO Collector-bas
2sc4662.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC4662DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 400V(Min)(BR)CEOHigh Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching regulator and general purposeapplications.ABSOLUTE MAXIMUM RATINGS(T =25
Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D209L , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
