2SC467 Datasheet, Equivalent, Cross Reference Search

Ordering number:EN3708NPN Epitaxial Planar Silicon Transistor2SC467520V/8A Switching ApplicationsFeatures Package Dimensions Adoption of MBIT process.unit:mm Low saturation voltage.2042B Fast switching speed.[2SC4675] Large current capacity.8.04.03.31.0 1.03.01.60.80.80.75 0.71 : Emitter2 : Collector3 : Base2.44.8SANYO : TO-126ML

Ordering number:EN3927NPN Epitaxial Planar Silicon Transistor2SC4673UHF Low-Noise Amplifier,Wide-Band Amplifier ApplicationsFeatures Package Dimensions Low noise figure : NF=1.5dB typ (f=0.9GHz).unit:mm2 High power gain : S21e =8.0dB typ (f=0.9GHz).2038A High cutoff frequency : fT=4.5GHz typ.[2SC4673]4.51.51.60.4 0.53 2 10.41.53.01 : Base

Ordering number:EN3483NPN Epitaxial Planar Silicon Darlington Transistor2SC4671Various Drivers ApplicationsApplications Package Dimensions Suitable for use in switching of L load (motorunit:mmdrivers, printer hammer drivers, relay drivers).2064[2SC4671]2.51.45Features6.9 1.0 High DC current gain. Wide ASO. On-chip Zener diode of 60 10V between colle

2SA1797 / 2SB1443TransistorsTransistors2SC4672(96-100-B208)(96-181-D208)291

2SC4672 Transistors Low Frequency Transistor (50V, 3A) 2SC4672 Features 1) Low saturation voltage, typically VCE (sat) =0.1V at IC/IB =1A /50mA. 2) Excellent DC current gain characteristics. 3) Complements the 2SA1797. Absolute maximum ratings (Ta=25C) Parameter Symbol Limits UnitCollector-base voltage VCBO 60 VCollector-emitter voltage VCEO 50 VEmitter-base voltage

2SC4672 Transistors Low Frequency Transistor (50V, 3A) 2SC4672 Features 1) Low saturation voltage, typically VCE (sat) =0.1V at IC/IB =1A /50mA. 2) Excellent DC current gain characteristics. 3) Complements the 2SA1797. Absolute maximum ratings (Ta=25C) Parameter Symbol Limits UnitCollector-base voltage VCBO 60 VCollector-emitter voltage VCEO 50 VEmitter-base voltage

2SC4672-PMCCMicro Commercial ComponentsTM20736 Marilla Street Chatsworth2SC4672-QMicro Commercial ComponentsCA 91311Phone: (818) 701-49332SC4672-RFax: (818) 701-4939FeaturesNPN Ideally Suited For Automatic Instertion Untral Small Surface Mount PackagePlastic-Encapsulate Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See order

2SC4672-PMCCMicro Commercial ComponentsTM20736 Marilla Street Chatsworth2SC4672-QMicro Commercial ComponentsCA 91311Phone: (818) 701-49332SC4672-RFax: (818) 701-4939FeaturesNPN Ideally Suited For Automatic Instertion Untral Small Surface Mount PackagePlastic-Encapsulate Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See order

2SC4672-PMCCMicro Commercial ComponentsTM20736 Marilla Street Chatsworth2SC4672-QMicro Commercial ComponentsCA 91311Phone: (818) 701-49332SC4672-RFax: (818) 701-4939Features Halogen free available upon request by adding suffix "-HF"NPN Ideally Suited For Automatic Instertion Untral Small Surface Mount PackagePlastic-Encapsulate Lead Free Finish/R

UNISONIC TECHNOLOGIES CO., LTD 2SC4672 NPN SILICON TRANSISTOR LOW FREQUENCY TRANSISTOR (50V,2A) DESCRIPTION The UTC 2SC4672 is a low frequency transistor. Excellent DC current gain characteristics. FEATURES *Low Saturation Voltage, Typically VCE(SAT)=0.1V at IC / IB=1A / 50mA *Excellent DC Current Gain Characteristics ORDERING INFORMATION Pin Assignment Order

2SC4672 500 mW, 60 V NPN Plastic-Encapsulate Transistor Elektronische Bauelemente RoHS Compliant Product SOT-89 A suffix of -C specifies halogen & lead-free FEATURES 4 Low saturation voltage, typically VCE(SAT)=0.1V at IC/IB=1A/50mA. Excellent DC current gain characteristics. 123A Complements the 2SA1797 ECB DCollectorF GH KJ L

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors SOT-89-3L 2SC4672 TRANSISTOR (NPN) 1. BASE FEATURES 2. COLLECTOR Low Saturation Voltage Excellent hFE Characteristics 3. EMITTER Complements the 2SA1797 MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage 60 V VCEO Co

2SC4672 SOT-89-3L TRANSISTOR (NPN)1. BASE FEATURES 2. COLLECTOR Low Saturation Voltage Excellent hFE Characteristics 3. EMITTER Complements the 2SA1797 MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 6 V IC Collector Current 2 A PC Coll

2SC4672 SOT-89 Transistor(NPN)1. BASE SOT-892. COLLECTOR 4.61 B4.41.61.81.41.42 3. EMITTER 3 2.64.252.43.75Features 0.8MIN0.530.400.48Low saturation voltage, typically VCE (sat) =0.1V at IC/IB =1A /50mA. 0.44 2x)0.13 B0.35 0.371.5 Excellent DC current gain characteristics. 3.0Complements the 2SA1797. Dimensions in inches

2SC4672NPN EPITAXIAL PLANAR TRANSISTORP b Lead(Pb)-Free1. BASE2. COLLECTOR3. EMITTER 123Features:SOT-89* Low saturation voltage, typically VCE(sat) =0.35V at IC/IB=1A/50mA.* Excellent DC current gain characteristics.Mechanical Data:* Case : Molded PlasticABSOLUTE MAXIMUM RATINGS(TA=25C Unless Otherwise Noted)Rating Symbol Value UnitVCBO60 VCollector to B

FM120-M WILLAS2SC4672 THRUSOT-89 Plastic-Encapsulate TransistorsFM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200VSOD-123 PACKAGE Pb Free ProducPackage outlineFeaturesSOT-89TRANSISTOR (NPN) esign, excellent power dissipation offers Batch process d better reverse leakage current and thermal resistance.SOD-123HFEATURES Low profile surface

2SC4672 Rev.J Jan.-2019 DATA SHEET / Descriptions SOT-89 NPN Silicon NPN transistor in a SOT-89 Plastic Package. / Features ,, 2SA1797 Low saturation voltage, excellent DC current gain characteristics, complements the 2SA1797. / Applications

2SC4672U-H4031 NPN Silicon Epitaxial Planar Transistor Low Frequency Transistor Absolute Maximum Ratings (T = 25) aParameter Symbol Value Unit Collector Base Voltage V 60 V CBOCollector Emitter Voltage V 50 V CEOEmitter Base Voltage V 6 V EBOCollector Current - DC I 3 CA Collector Current - Pulse 1) I 6 CP0.5 P Total Power Dissipation tot W 2 2) Jun

ST 2SC4672U NPN Silicon Epitaxial Planar Transistor Low Frequency Transistor Absolute Maximum Ratings (Ta = 25) Parameter Symbol Value UnitCollector Base Voltage VCBO 60 VCollector Emitter Voltage VCEO 50 VEmitter Base Voltage VEBO 6 VCollector Current - DC IC 3 A Collector Current - Pulse 1) ICP 6 A 0.5 Ptot W Total Power Dissipation2 2) Junction Temperature TJ

SMD Type TransistorsNPN Transistors2SC4672Features1.70 0.1Low saturation voltage, typically VCE (sat) =0.1V at IC/IB =1A /50mA.Excellent DC current gain characteristics.0.42 0.10.46 0.11.Base2.Collector3.EmitterAbsolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitCollector-base voltage VCBO 60 VCollector-emitter voltage VCEO 50 VEmitter-base voltage VEBO 6

2SC4672NPN Transistors Features Low Saturation Voltage Excellent hFE Characteristics Complementary to 2SA1797321 1.Base2.Collector3.Emitter Simplified outline(SOT-89) Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 60 Collector - Emitter Voltage VCEO 50 V Emitter - Base Voltage VEBO 6 Collector Cur

2SC4672NPN Transistors3 Features2 Low Saturation Voltage1 1.Base Excellent hFE Characteristics2.Collector Complementary to 2SA17973.Emitter Simplified outline(SOT-89) Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 60 Collector - Emitter Voltage VCEO 50 V Emitter - Base Voltage VEBO 6 Collector Cur

2SC4672NPN-Silicon General use Transistors41W 1.5A25V 1 2 3ApplicationsCan be used for switching and amplifying in various SOT-89 electrical and electronic circuit. Maximum ratings Parameters Symbol Rating UnitV VCEO 25Collector-emitter voltage (IB=0) VCBO 40 VCollector-base voltageIE=0 VEBO 6 VEmitter-base voltageIC=0 IC 1.5 ACollector

Plastic-Encapsulate TransistorsFEATURES2SC4672 (NPN) Low saturation voltage, typically VCE (sat) =0.1V atIC/IB =1A /50mA. Excellent DC current gain characteristics. Complements the 2SA1797.Maximum Ratings (Ta=25 unless otherwise noted)Parameter Symbol Value UnitCollector-Base Voltage VCBO 60 V1. BASECollector-Emitter Voltage VCEO 50 V2. COLLECTO SOT-89Emitter-