2SC4686 Datasheet, Equivalent, Cross Reference Search

Type Designator: 2SC4686

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 10 W

Maximum Collector-Base Voltage |Vcb|: 1500 V

Maximum Collector-Emitter Voltage |Vce|: 1000 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 0.05 A

Max. Operating Junction Temperature (Tj): 150 °C

Transition Frequency (ft): 5.5 MHz

Collector Capacitance (Cc): 5.5 pF

Forward Current Transfer Ratio (hFE), MIN: 15

Noise Figure, dB: -

Package: X34

2SC4686 Transistor Equivalent Substitute - Cross-Reference Search

2SC4686 Datasheet (PDF)

1.1. 2sc4686 2sc4686a.pdf Size:135K _toshiba

2SC4686,2SC4686A TOSHIBA Transistor Silicon NPN Triple Diffused Planar Type 2SC4686, 2SC4686A TV Dynamic Focus Applications Unit: mm High-Voltage Switching Applications High-Voltage Amplifier Applications • High voltage: VCEO = 1200 V (max) • Small collector output capacitance: Cob = 2.2 pF (typ.) (VCB = 100 V) Maximum Ratings (Tc = 25°C) Characteristics Symbol Rating U

1.2. 2sc4686.pdf Size:223K _toshiba