2SC469 Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SC469
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.1 W
Maximum Collector-Base Voltage |Vcb|: 20 V
Maximum Collector-Emitter Voltage |Vce|: 12 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.03 A
Max. Operating Junction Temperature (Tj): 175 °C
Transition Frequency (ft): 125 MHz
Forward Current Transfer Ratio (hFE), MIN: 40
Noise Figure, dB: -
Package: TO50-1
2SC469 Transistor Equivalent Substitute - Cross-Reference Search
2SC469 Datasheet (PDF)
1.1. 2sc4690.pdf 
Size:121K _toshiba
2SC4690 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC4690 Power Amplifier Applications Unit: mm • High breakdown voltage: V = 140 V (min) CEO • Complementary to 2SA1805 • Suitable for use in 70-W high fidelity audio amplifier’s output stage Maximum Ratings (Tc = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 140 V Collector-emitter v
1.2. 2sc4694.pdf Size:111K _sanyo
Ordering number:EN3485 NPN Epitaxial Planar Silicon Transistor 2SC4694 Low-Frequency General-Purpose Amplifier, Muting Applications Features Package Dimensions Adoption of MBIT process. unit:mm High DC current gain. 2059B High VEBO (VEBO? 25V). [2SC4694] High reverse hFE (150 typ). 0.3 Small ON resistance [Ron=1? (IB=5mA)]. 0.15 3 Very small-sized package permitti
1.3. 2sc4695.pdf Size:105K _sanyo
Ordering number:EN3486 NPN Epitaxial Planar Silicon Transistor 2SC4695 Low-Frequency General-Purpose Amplifier, Muting Applications Features Package Dimensions Adoption of FBET process. unit:mm High DC current gain. 2018B High VEBO (VEBO? 25V). [2SC4695] High reverse hFE (150 typ). Small ON resistance [Ron=1? (IB=5mA)]. 0.4 0.16 3 Very small-sized package permitti
1.4. 2sc4696.pdf Size:78K _sanyo
Ordering number:EN3580A NPN Epitaxial Planar Silicon Darlington Transistor 2SC4696 Driver Applications Applications Package Dimensions Motor drivers, printer hammer drivers. unit:mm 2064A Features [2SC4696] 2.5 1.45 Darlington connection. 6.9 1.0 On-chip Zener diode of 90 10V between collector and base. High DC current gain. High inductive load handling capability.
1.5. 2sc4691 e.pdf Size:46K _panasonic
Transistor 2SC4691 Silicon NPN epitaxial planer type For high speed switching Unit: mm 1.6 0.15 0.4 0.8 0.1 0.4 Features High-speed switching. 1 Low collector to emitter saturation voltage VCE(sat). SS-Mini type package, allowing downsizing of the equipment 3 and automatic insertion through the tape packing. 2 Absolute Maximum Ratings (Ta=25?C) Parameter Symbol Ratings Unit 0.2
1.6. 2sc4691.pdf Size:42K _panasonic
Transistor 2SC4691 Silicon NPN epitaxial planer type For high speed switching Unit: mm 1.6 0.15 0.4 0.8 0.1 0.4 Features High-speed switching. 1 Low collector to emitter saturation voltage VCE(sat). SS-Mini type package, allowing downsizing of the equipment 3 and automatic insertion through the tape packing. 2 Absolute Maximum Ratings (Ta=25?C) Parameter Symbol Ratings Unit 0.2
1.7. 2sc4692.pdf Size:44K _hitachi
2SC4692 Maximum Collector Dissipation Curve 60 40 20 0 50 100 150 Case Temperature TC (C) Area of Safe Operation 20 (100 V, 20 A) f = 31.5 kHz Ta = 25C 16 For picture tube arcing 12 8 (800 V, 5 A) 4 0.5 mA 0 400 800 1,200 1,600 2,000 Collector to emitter Voltage VCE (V) Typical Output Characteristics 10 8 6 4 2 TC = 25C IB = 0 0 2 4 6 8 10 Collector to emitter V
1.8. 2sc4693.pdf Size:30K _hitachi
2SC4693 Silicon NPN Epitaxial Planar Application VHF Wide band amplifier Features High gain bandwidth product fT = 2.5 GHz Typ. Large collector power dissipation PC = 900 mW Outline TO-92MOD 1. Emitter 2. Collector 3. Base 3 2 1 2SC4693 Absolute Maximum Ratings (Ta = 25C) Item Symbol Ratings Unit Collector to base voltage VCBO 30 V Collector to emitter voltage VCEO 20 V
1.9. 2sc4690.pdf Size:198K _jmnic
JMnic Product Specification Silicon NPN Power Transistors 2SC4690 DESCRIPTION ·With TO-3PFM package ·Complementary to 2SA1805 ·Recommend for 70W high fidelity audio frequency amplifier output stage APPLICATIONS ·Power amplifier applications PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-3PFM) and symbol 3 Emitter Absolute maximum ratings(Ta=?)
1.10. 2sc4690.pdf Size:83K _inchange_semiconductor
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4690 DESCRIPTION Ў¤ With TO-3PML package Ў¤ Complementary to 2SA1805 Ў¤ Recommend for 70W high fidelity audio frequency amplifier output stage APPLICATIONS Ў¤ Power amplifier applications PINNING PIN 1 2 3 Base Collector Fig.1 simplified outline (TO-3PML) and symbol Emitter DESCRIPTION Absolute ma
1.11. 2sc4695.pdf Size:1179K _kexin
SMD Type Transistors NPN Transistors 2SC4695 SOT-23 Unit: mm 2.9+0.1 -0.1 +0.1 0.4-0.1 3 ■ Features ● Collector Current Capability IC=500mA ● Collector Emitter Voltage VCEO=20V 1 2 +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 1.Base 2.Emitter 3.collector ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO 50 Colle
Datasheet: 2SA1575 , 2SA1575C , 2SA1575D , 2SA1575E , 2SA1575F , 2SA1576 , 2SA1577 , 2SA1578 , BC547 , 2SA1579P , 2SA1579Q , 2SA1579R , 2SA1579S , 2SA1580-3 , 2SA1580-4 , 2SA1580-5 , 2SA1581 .
