2SC469 PDF and Equivalents Search

 

2SC469 Specs and Replacement

Type Designator: 2SC469

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.1 W

Maximum Collector-Base Voltage |Vcb|: 20 V

Maximum Collector-Emitter Voltage |Vce|: 12 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 0.03 A

Max. Operating Junction Temperature (Tj): 175 °C

Electrical Characteristics

Transition Frequency (ft): 125 MHz

Forward Current Transfer Ratio (hFE), MIN: 40

Noise Figure, dB: -

Package: TO50-1

 2SC469 Substitution

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2SC469 datasheet

 0.1. Size:121K  toshiba

2sc4690.pdf pdf_icon

2SC469

2SC4690 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC4690 Power Amplifier Applications Unit mm High breakdown voltage V = 140 V (min) CEO Complementary to 2SA1805 Suitable for use in 70-W high fidelity audio amplifier s output stage Maximum Ratings (Tc = 25 C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 140 V Collector-emitter v... See More ⇒

 0.2. Size:78K  sanyo

2sc4696.pdf pdf_icon

2SC469

Ordering number EN3580A NPN Epitaxial Planar Silicon Darlington Transistor 2SC4696 Driver Applications Applications Package Dimensions Motor drivers, printer hammer drivers. unit mm 2064A Features [2SC4696] 2.5 1.45 Darlington connection. 6.9 1.0 On-chip Zener diode of 90 10V between collector and base. High DC current gain. High inductive load handling capa... See More ⇒

 0.3. Size:105K  sanyo

2sc4695.pdf pdf_icon

2SC469

Ordering number EN3486 NPN Epitaxial Planar Silicon Transistor 2SC4695 Low-Frequency General-Purpose Amplifier, Muting Applications Features Package Dimensions Adoption of FBET process. unit mm High DC current gain. 2018B High VEBO (VEBO 25V). [2SC4695] High reverse hFE (150 typ). Small ON resistance [Ron=1 (IB=5mA)]. 0.4 0.16 3 Very small-sized pac... See More ⇒

 0.4. Size:111K  sanyo

2sc4694.pdf pdf_icon

2SC469

Ordering number EN3485 NPN Epitaxial Planar Silicon Transistor 2SC4694 Low-Frequency General-Purpose Amplifier, Muting Applications Features Package Dimensions Adoption of MBIT process. unit mm High DC current gain. 2059B High VEBO (VEBO 25V). [2SC4694] High reverse hFE (150 typ). 0.3 Small ON resistance [Ron=1 (IB=5mA)]. 0.15 3 Very small-sized pac... See More ⇒

Detailed specifications: 2SC4688, 2SC4688O, 2SC4688R, 2SC4689, 2SC4689O, 2SC4689R, 2SC468A, 2SC468H, D667, 2SC4690, 2SC4690O, 2SC4690R, 2SC4691, 2SC4692, 2SC47, 2SC470, 2SC4704

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History: BTD1816I3 | 2SC5658M3T5G | HUN2241

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