2SC471H Datasheet. Specs and Replacement
Type Designator: 2SC471H
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.2 W
Maximum Collector-Base Voltage |Vcb|: 30 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 175 °C
Electrical Characteristics
Transition Frequency (ft): 80 MHz
Forward Current Transfer Ratio (hFE), MIN: 25
Package: TO5
2SC471H Substitution
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2SC471H datasheet
Ordering number EN3688A NPN Triple Diffused Planar Silicon Transistor 2SC4710 2100V/10mA High-Voltage Amplifier, High-Voltage Switching Applications Features Package Dimensions High breakdown voltage (VCEO min=2100V). unit mm Small Cob (typical Cob=1.3pF). 2079B Wide ASO. [2SC4710] High reliability (Adoption of HVP process). 4.5 10.0 2.8 Full isolation packag... See More ⇒
2SC4774 / 2SC4713K Transistors High frequency amplifier transistor, RF switching (6V, 50mA) 2SC4774 / 2SC4713K Features 2SC4774 1) Very low output-on resistance (Ron). 2) Low capacitance. 1.25 2.1 Absolute maximum ratings (Ta=25 C) Parameter Symbol Limits Unit Collector-base voltage VCBO 12 V Collector-emitter voltage VCEO 6 V 0.1Min. Emitter-base voltage VEBO 3 V E... See More ⇒
Transistor 2SC4715 Silicon NPN epitaxial planer type For low-frequency high breakdown voltage amplification Unit mm 4.0 0.2 Features Satisfactory linearity of forward current transfer ratio hFE. High collector to emitter voltage VCEO. Small collector output capacitance Cob. marking Absolute Maximum Ratings (Ta=25 C) 1 2 3 Parameter Symbol Ratings Unit Collector to base voltage... See More ⇒
Detailed specifications: 2SC4704B, 2SC4704C, 2SC4707, 2SC4708, 2SC4708B, 2SC4708C, 2SC471, 2SC4710, C5198, 2SC472, 2SC472H, 2SC473, 2SC4735, 2SC4735D, 2SC4735E, 2SC4735F, 2SC4738
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