All Transistors. 2SC4735 Datasheet

 

2SC4735 Datasheet, Equivalent, Cross Reference Search

Type Designator: 2SC4735

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 1.5 W

Maximum Collector-Base Voltage |Vcb|: 75 V

Maximum Collector-Emitter Voltage |Vce|: 45 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 1 A

Max. Operating Junction Temperature (Tj): 150 °C

Transition Frequency (ft): 250 MHz

Collector Capacitance (Cc): 20 pF

Forward Current Transfer Ratio (hFE), MIN: 60

Noise Figure, dB: -

Package: U2

2SC4735 Transistor Equivalent Substitute - Cross-Reference Search

 

2SC4735 Datasheet (PDF)

1.1. 2sc4735.pdf Size:109K _sanyo

2SC4735
2SC4735

Ordering number:EN3974 NPN Epitaxial Planar Silicon Transistor 2SC4735 27MHz CB Transceiver Driver Applications Features Package Dimensions Large power type such as PC=1.5W when used unit:mm without heatsink. 2084B It is possible to make appliances more compact [2SC4735] because its height on board is 9.5mm. 4.5 1.9 2.6 Effective in automatic inserting and counting stocked 1

4.1. 2sc4738.pdf Size:205K _toshiba

2SC4735
2SC4735

2SC4738 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC4738 Audio Frequency General Purpose Amplifier Applications Unit: mm • High voltage and high current: VCEO = 50 V, IC = 150 mA (max) • Excellent hFE linearity: hFE (IC = 0.1 mA)/ hFE (IC = 2 mA) = 0.95 (typ.) • High hFE: hFE = 120~700 • Complementary to 2SA1832 • Small package Absolute Maximu

4.2. 2sc4738ft.pdf Size:138K _toshiba

2SC4735
2SC4735

2SC4738FT TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC4738FT Audio Frequency General Purpose Amplifier Applications Unit: mm • High Voltage: VCEO = 50 V • High Current: I = 150 mA (max) C • High h : h = 120 to 400 FE FE • Excellent h Linearity FE : h (I = 0.1 mA)/h (I = 2 mA) = 0.95 (typ.) FE C FE C • Complementary to 2SA1832FT Maximum Rat

 4.3. 2sc4738f.pdf Size:234K _toshiba

2SC4735
2SC4735

2SC4738F TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC4738F Audio Frequency General Purpose Amplifier Applications Unit: mm • High voltage and high current: VCEO = 50 V, IC = 150 mA (max) • Excellent h linearity: h (I = 0.1 mA)/h (I = 2 mA) = 0.95 (typ.) FE FE C FE C • High h h = 120~400 FE: FE • Complementary to 2SA1832F • Small package Maximu

4.4. 2sc4731.pdf Size:52K _sanyo

2SC4735
2SC4735

Ordering number:ENN3879A PNP/NPN Epitaxial Planar Silicon Transistors 2SA1827/2SC4731 100V/4A Switching Applications Applications Package Dimensions Relay drivers, high-speed inverters, converters, and unit:mm other general high-current switching applicaions. 2084B [2SA1827/2SC4731] 4.5 Features 1.9 2.6 10.5 1.2 1.4 Low collector-to-emitter saturation voltage. High Gain-Ba

 4.5. 2sc4734.pdf Size:155K _sanyo

2SC4735
2SC4735

Ordering number:EN4409 2SA1830 : PNPEpitaxial Planar Silicon Transistor 2SC4734 ; NPN Triple Diffused Planar Silicon Transistor 2SA1830/2SC4734 High-Voltage Driver Applications Features Package Dimensions Large current capacity (IC=2A). unit:mm High breakdown voltage (VCEO? 400V). 2084A Possible to offer the 2SA1830/2SC4734 devices in a [2SA1830/2SC4734] tape reel packaging, w

4.6. 2sc4730.pdf Size:141K _sanyo

2SC4735
2SC4735

Ordering number:EN3878 PNP/NPN Epitaxial Planar Silicon Transistors 2SA1826/2SC4730 100V/3A Switching Applications Applications Package Dimensions Relay drivers, high-speed inverters, converters, and unit:mm other general high-current switching applications. 2084 [2SA1826/2SC4730] Features Low collector-to-emitter saturation voltage. High Gain-Bandwidth Product. Excellent

4.7. 2sc4737.pdf Size:41K _sanyo

2SC4735
2SC4735

Ordering number:ENN3880A NPN Epitaxial Planar Silicon Transistor 2SC4737 50V/2A Driver Applications Applications Package Dimensions Suitable for use in switching of L load (motor unit:mm drivers, printer hammer drivers, relay drivers). 2084B [2SC4737] 4.5 Features 1.9 2.6 10.5 1.2 1.4 High DC current gain. Wide ASO. On-chip Zener diode of 60 10V between collector an

4.8. 2sc4736.pdf Size:104K _sanyo

2SC4735
2SC4735

Ordering number:EN3975 NPN Epitaxial Planar Silicon Transistor 2SC4736 High hFE, Low-Frequency General-Purpose Amplifier Applications Features Package Dimensions Large current (IC=2A). unit:mm Adoption of MBIT process. 2084B High DC current gain (hFE=800 to 3200). [2SC4736] Low collector-to-emitter saturation voltage 4.5 1.9 2.6 (VCE(sat)? 0.5V). 10.5 1.2 1.4 High e

4.9. 2sc4738.pdf Size:154K _wietron

2SC4735
2SC4735

2SC4738 NPN TRANSISTOR 3 P b Lead(Pb)-Free 1 2 FEATURES: High voltage and high current SOT-523(SC-75) Excellent hFE linearity High hFE Complementary to 2SA1832 MAXIMUM RATINGS (TA=25°C unless otherwise noted) Parameter Symbol Value Units Collector-Base Voltage VCBO 60 V Collector-Emitter Voltage VCEO 50 V Emitter-Base Voltage VEBO 5 V Collector Current –Continuous IC 150

4.10. 2sc4738.pdf Size:1139K _kexin

2SC4735
2SC4735

SMD Type Transistors NPN Transistors 2SC4738 SOT-523 U nit: m m +0. 1 1.6 -0. 1 +0.1 1.0 -0.1 +0.05 0.2 -0.05 0.15±0.05 ■ Features 2 1 ● High Voltage and Current ● High DC Current Gain ● Small Package 3 ● Complementary to 2SA1832 0.3±0.05 +0.1 0.5-0.1 1. Base 2. Emitter 3. Collecter ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit

Datasheet: 2SC4708B , 2SC4708C , 2SC471 , 2SC4710 , 2SC471H , 2SC472 , 2SC472H , 2SC473 , 2N3906 , 2SC4735D , 2SC4735E , 2SC4735F , 2SC4738 , 2SC473H , 2SC474 , 2SC4742 , 2SC4743 .

 
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